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公开(公告)号：US20170092513A1
公开(公告)日：2017-03-30
申请号：US15312225
申请日：2015-06-05
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yuki HOSAKA , Yoshihiro UMEZAWA , Toshiki NAKAJIMA
IPC: H01L21/67 , H01L21/311 , H01J37/32 , H01L21/02
CPC classification number: H01L21/67069 , H01J37/32449 , H01J37/32633 , H01J37/32715 , H01J37/32834 , H01J2237/334 , H01L21/02274 , H01L21/31116 , H01L21/6719
Abstract: A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.
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公开(公告)号：US20210320009A1
公开(公告)日：2021-10-14
申请号：US17357006
申请日：2021-06-24
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yuki HOSAKA , Yoshihiro UMEZAWA , Toshiki NAKAJIMA , Mayo UDA
IPC: H01L21/3065 , H05H1/46 , H01J37/32
Abstract: A plasma processing apparatus includes a baffle plate, a shutter, and a driving device. The baffle plate has a cylindrical shape, and has a plurality of through holes formed in a sidewall thereof. The shutter has a cylindrical shape and is provided around the baffle plate to be movable in an axial direction of the baffle plate along the sidewall of the baffle plate. The driving device moves the shutter along the sidewall of the baffle plate. The plurality of through holes are disposed in the sidewall of the baffle plate so that synthesized conductance of the through holes, which are not covered by the shutter, is increased with respect to a movement amount of the shutter as the shutter is moved downward.
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公开(公告)号：US20170301518A1
公开(公告)日：2017-10-19
申请号：US15508054
申请日：2015-09-24
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yuki HOSAKA , Yoshihiro UMEZAWA , Mayo UDA , Takashi KUBO
IPC: H01J37/32 , F16K31/04 , C23C16/455 , F16K3/08 , H01L21/67
Abstract: According to an aspect, a gas supply mechanism for supplying a gas to a semiconductor manufacturing apparatus is provided. The gas supply mechanism includes a pipe connecting a gas source and the semiconductor manufacturing apparatus to each other, and a valve which is provided on the pipe. The valve includes a plate rotatable about an axis, the axis extending in a plate thickness direction, and a housing provided along the plate without contacting the plate to accommodate the plate, the housing providing a gas supply path along with the pipe. A through hole is formed in the plate, the through hole penetrating the plate at a position on a circle which extends around the axis and intersects the gas supply path.
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4.发明申请公开(公告)号：US20210020418A1
公开(公告)日：2021-01-21
申请号：US16978134
申请日：2019-06-17
Applicant: TOKYO ELECTRON LIMITED
Inventor： Daisuke HAYASHI , Yoshihiro UMEZAWA , Shinsuke OKA
Abstract: A measurement part controls power supplied to a heater such that a temperature of the heater becomes constant by using a heater controller, and measures the supplied power in an unignited state in which plasma is not ignited and a transient state in which the power supplied to the heater decreases after plasma is ignited. A parameter calculator performs fitting on a calculation model, which includes a heat input amount from the plasma as a parameter, for calculating the power supplied in the transient state by using the power supplied in the unignited state and the transient state and measured by the measurement part, and calculates the heat input amount. An output part configured to output information based on the heat input amount calculated by the parameter calculator.
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公开(公告)号：US20160260582A1
公开(公告)日：2016-09-08
申请号：US15055783
申请日：2016-02-29
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yuki HOSAKA , Yoshihiro UMEZAWA , Toshiki NAKAJIMA , Mayo UDA
IPC: H01J37/32 , C23C16/44 , C23C16/455 , C23C16/50
CPC classification number: H01J37/3244 , C23C16/4412 , C23C16/455 , C23C16/50 , H01J37/32009 , H01J37/32091 , H01J37/32633 , H01J37/32834
Abstract: A baffle structure of a plasma processing apparatus includes a first member and at least one second member. The first member includes a cylindrical portion extending between a placement table and a processing container. A plurality of vertically elongated through holes are formed in the cylindrical portion to be arranged in the circumferential direction. The at least one second member is disposed in the outside of the cylindrical portion of the first member in the radial direction. The at least one second member is arranged to form a cylindrical body having an inner diameter larger than the outer diameter of the cylindrical portion. The vertical positions of a plurality of second members may be individually changed. Or, the horizontal position of a single second member may be changed. Or, the single second member may be made to be inclined.
Abstract translation: 等离子体处理装置的挡板结构包括第一构件和至少一个第二构件。 第一构件包括在放置台和处理容器之间延伸的圆柱形部分。 在圆筒形部分上形成多个垂直细长的通孔，沿圆周方向布置。 所述至少一个第二构件在径向方向上设置在所述第一构件的圆柱形部分的外侧。 至少一个第二构件被布置成形成具有大于圆柱形部分的外径的内径的圆柱体。 多个第二构件的垂直位置可以单独改变。 或者，可以改变单个第二构件的水平位置。 或者，可以使单个第二构件倾斜。
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Patent Agency Ranking
公开(公告)号：US20220005672A1
公开(公告)日：2022-01-06
申请号：US17361868
申请日：2021-06-29
Applicant: Tokyo Electron Limited
Inventor： Takehisa SAITO , Yoshihiro UMEZAWA , Naoki FUJIWARA
IPC: H01J37/32
Abstract: A plasma processing apparatus includes a chamber; a dielectric window, a first antenna for generating plasma within the chamber, and a first power supply for supplying RF power to the first antenna. Power is fed to a first line constituting the first antenna from the first power supply and the vicinity of the midpoint is grounded so that the first antenna resonates at a wavelength that is ½ of a wavelength of the RF power. The first antenna includes a first portion close to a first end with reference to a first position separated from the first end by a first distance toward a central portion of the first line, a second portion close to a second end with reference to a second position separated from the second end by a second distance toward the central portion, and a first intermediate portion between the first and second portions.
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公开(公告)号：US20210375597A1
公开(公告)日：2021-12-02
申请号：US17402398
申请日：2021-08-13
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yuki HOSAKA , Yoshihiro UMEZAWA , Toshiki NAKAJIMA
IPC: H01J37/32 , H01L21/67 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/311
Abstract: A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting cable and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.
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公开(公告)号：US20190131136A1
公开(公告)日：2019-05-02
申请号：US16061434
申请日：2016-12-02
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yuki HOSAKA , Yoshihiro UMEZAWA , Toshiki NAKAJIMA , Mayo UDA
IPC: H01L21/3065 , H01J37/32 , H05H1/46
Abstract: A plasma processing apparatus includes a baffle plate, a shutter, and a driving device. The baffle plate has a cylindrical shape, and has a plurality of through holes formed in a sidewall thereof. The shutter has a cylindrical shape and is provided around the baffle plate to be movable in an axial direction of the baffle plate along the sidewall of the baffle plate. The driving device moves the shutter along the sidewall of the baffle plate. The plurality of through holes are disposed in the sidewall of the baffle plate so that synthesized conductance of the through holes, which are not covered by the shutter, is increased with respect to a movement amount of the shutter as the shutter is moved downward.
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公开(公告)号：US20170301568A1
公开(公告)日：2017-10-19
申请号：US15484389
申请日：2017-04-11
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yuki HOSAKA , Yoshihiro UMEZAWA , Toshiki NAKAJIMA , Mayo UDA , Kenichi SHIMONO
CPC classification number: H01L21/67069 , F16K5/0442 , F16K31/086 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01J2237/334
Abstract: The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.
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10.发明公开公开(公告)号：US20240186125A1
公开(公告)日：2024-06-06
申请号：US18442022
申请日：2024-02-14
Applicant: TOKYO ELECTRON LIMITED
Inventor： Daisuke HAYASHI , Yoshihiro UMEZAWA , Shinsuke OKA
CPC classification number: H01J37/32935 , G05D23/1917 , G05D23/193 , G08B21/18 , H01J37/32724 , H01J37/32926 , H01J37/32944 , H01J37/3299 , H05B1/023 , H05B1/0233 , H01J2237/24585 , H01J2237/334 , H05B2203/005
Abstract: A measurement part controls power supplied to a heater such that a temperature of the heater becomes constant by using a heater controller, and measures the supplied power in an unignited state in which plasma is not ignited and a transient state in which the power supplied to the heater decreases after plasma is ignited. A parameter calculator performs fitting on a calculation model, which includes a heat input amount from the plasma as a parameter, for calculating the power supplied in the transient state by using the power supplied in the unignited state and the transient state and measured by the measurement part, and calculates the heat input amount. An output part configured to output information based on the heat input amount calculated by the parameter calculator
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