公开(公告)号：US20180066221A1

公开(公告)日：2018-03-08

申请号：US15693763

申请日：2017-09-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshifumi KITAHARA ,  Kunitada HATABAYASHI ,  Kenichi KAGAWA ,  Yusuke YODA

IPC: C12M1/00 ,  C12M1/34 ,  C12M3/00

CPC classification number: C12M29/20 ,  C12M23/02 ,  C12M23/34 ,  C12M23/40 ,  C12M23/48 ,  C12M29/00 ,  C12M29/26 ,  C12M33/04 ,  C12M33/14 ,  C12M41/12 ,  C12M41/24 ,  C12M41/26 ,  C12M41/34 ,  C12M41/44 ,  C12M47/02

Abstract: A buffer tank for storing a culture medium for cell culture, includes: a tank main body including a cylindrical inner surface extending in a vertical direction, an inverted conical storage bottom surface formed below the cylindrical inner surface, and a storage space defined by the cylindrical inner surface and the inverted conical storage bottom surface and configured to store the culture medium an injection portion configured to inject the culture medium from the inverted conical storage bottom surface of the tank main body into the storage space; and a discharge portion configured to discharge the culture medium stored in the storage space, wherein the injection portion is configured to inject the culture medium toward a central axis line of the cylindrical inner surface of the tank main body and obliquely upward with respect to the central axis line.

公开(公告)号：US20240347321A1

公开(公告)日：2024-10-17

申请号：US18633928

申请日：2024-04-12

Applicant: Tokyo Electron Limited

Inventor： Tamihiro KOBAYASHI ,  Toshifumi KITAHARA

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32513 ,  H01J2237/166

Abstract: A processing apparatus includes a processing container, a main body constituting a lower portion of the processing container, and a lid constituting an upper portion of the processing container, wherein the lid includes a shower plate, a plate portion provided above the shower plate, and a connecting member for connecting the shower plate to the plate portion, a guide groove arranged to face the shower plate is provided in a lower surface of the plate portion, a protruding portion of the connecting member is accommodated in the guide groove, a position of the shower plate with respect to the plate portion is determined by accommodating the protruding portion in a first end of the guide groove, and in a state in which the protruding portion is accommodated in the first end and the lid is separated from the main body, the shower plate is suspended from the plate portion.

公开(公告)号：US20230064817A1

公开(公告)日：2023-03-02

申请号：US17904427

申请日：2021-02-15

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Toshifumi KITAHARA

IPC: H01J37/32

Abstract: A plasma processing apparatus, which introduces electromagnetic waves having a frequency of the VHF band or higher into a processing container and processes a substrate by using plasma generated from a gas, includes: a stage which is provided inside the processing container and on which the substrate is placed; an electromagnetic wave introducer formed to face an inner wall of the processing container and configured to introduce the electromagnetic waves into the processing container; and a dielectric member provided on the inner wall through which the electromagnetic waves propagate, wherein a first portion of the dielectric member protrudes from the inner wall toward the stage, and wherein a second portion of the dielectric member is inserted into a recess or step portion of the inner wall.

公开(公告)号：US20230019369A1

公开(公告)日：2023-01-19

申请号：US17809446

申请日：2022-06-28

Applicant: Tokyo Electron Limited

Inventor： Masaki HIRAYAMA ,  Toshifumi KITAHARA

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a chamber; an introducer installed such that electromagnetic waves are introduced into the chamber from the introducer; and a choke structure installed on a wall of the chamber and configured to suppress propagation of the electromagnetic waves downstream along an inner wall surface of the chamber from a location at which the choke structure is installed. The choke structure includes: a first portion having a slit shape and connected to a space within the chamber; and a second portion extending from the first portion in the wall of the chamber. A length of the second portion along a direction of an electric field of the electromagnetic waves in the second portion is longer than a length of the first portion along a direction of an electric field of the electromagnetic waves in the first portion.

公开(公告)号：US20210398786A1

公开(公告)日：2021-12-23

申请号：US17297190

申请日：2019-11-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Toshifumi KITAHARA

IPC: H01J37/32

Abstract: Improvement of plasma heat dissipation has been required with respect to a plasma processing apparatus. The plasma processing apparatus includes a dielectric, a conductive film, a heat radiation film, and an electrode. The dielectric has one surface which faces a space for plasma generation. The conductive film is installed on the other surface of the dielectric. The heat radiation film is installed on the conductive film, and has a higher emissivity than the conductive film. The electrode is electrically connected to the conductive film so as to apply electric power for plasma generation.

公开(公告)号：US20230005720A1

公开(公告)日：2023-01-05

申请号：US17756681

申请日：2020-11-24

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Toshifumi KITAHARA ,  Satoru KAWAKAMI

IPC: H01J37/32 ,  C23C16/509

Abstract: A plasma processing apparatus includes a stage provided in a processing container, and an upper electrode. The upper electrode includes a dielectric plate facing the stage, and a conductor formed on a surface of the dielectric plate opposite to a surface of the dielectric plate facing the stage. The dielectric plate includes a central portion, an outer peripheral portion, and an intermediate portion between the central portion and the outer peripheral portion. The intermediate portion has a thickness larger than the thicknesses of the central portion and the outer peripheral portion.

公开(公告)号：US20220246399A1

公开(公告)日：2022-08-04

申请号：US17584781

申请日：2022-01-26

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Toshifumi KITAHARA

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a coaxial tube that extends in a vertical direction and forms a portion of a radio frequency waveguide; a substrate support configured to support a substrate; an electrode including a gas flow path connected to a gas ejection port opened toward a space above the substrate support, wherein the electrode is provided above the substrate support and an inner conductor of the coaxial tube is connected to a center of the electrode; an enlarged diameter portion forming a part of the radio frequency waveguide together with the electrode and connected to an outer conductor of the coaxial tube; and dielectric tubes formed of a dielectric material, wherein each of the dielectric tubes is connected to the electrode and penetrates a space between the electrode and the enlarged diameter portion to supply a gas to the electrode, wherein the dielectric tubes is scatteredly provided.

公开(公告)号：US20220084797A1

公开(公告)日：2022-03-17

申请号：US17299430

申请日：2019-11-26

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Toshifumi KITAHARA

IPC: H01J37/32

Abstract: Provided is a plasma processing apparatus capable of suppressing abnormal discharge. The plasma processing apparatus includes: an upper electrode and a lower electrode which are disposed inside a processing container so as to face each other inside the processing container; and a dielectric shower for gas introduction disposed below the upper electrode, wherein the plasma processing apparatus generates plasma in a space between the upper electrode and the lower electrode. The upper electrode includes: at least one slot configured to introduce VHF waves into the processing container; and a gas flow path provided independently of the at least one slot and in communication with the dielectric shower.

公开(公告)号：US20210407766A1

公开(公告)日：2021-12-30

申请号：US17304406

申请日：2021-06-21

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Toshifumi KITAHARA ,  Satoru KAWAKAMI

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a chamber; a substrate support provided within the chamber; a shower head made of a metal and including a plurality of gas holes open toward a space within the chamber, the shower head being provided above the substrate support; a gas supply pipe made of the metal and extending vertically above the chamber to be connected to a center of an upper portion of the shower head; an introduction part formed of a dielectric material and provided along an outer circumference of the shower head so as to introduce electromagnetic waves, which are VHF waves or UHF waves, into the chamber; and an electromagnetic wave supply path connected to the gas supply pipe, wherein the gas supply pipe includes an annular flange, and the supply path includes a conductor connected to the flange.