公开(公告)号：US20040175844A1

公开(公告)日：2004-09-09

申请号：US10731745

申请日：2003-12-08

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Peidong Yang ,  Rongrui He ,  Joshua Goldberger ,  Rong Fan ,  Yi-Ying Wu ,  Deyu Li ,  Arun Majumdar

IPC: H01L021/00

CPC classification number: C30B29/602 ,  B82Y10/00 ,  B82Y30/00 ,  C30B25/02 ,  C30B29/605 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02653 ,  H01L21/02664 ,  H01L29/0676 ,  H01L29/068 ,  H01L2924/0002 ,  Y10S977/734 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/855 ,  H01L2924/00

Abstract: Methods of fabricating uniform nanotubes are described in which nanotubes were synthesized as sheaths over nanowire templates, such as using a chemical vapor deposition process. For example, single-crystalline zinc oxide (ZnO) nanowires are utilized as templates over which gallium nitride (GaN) is epitaxially grown. The ZnO templates are then removed, such as by thermal reduction and evaporation. The completed single-crystalline GaN nanotubes preferably have inner diameters ranging from 30 nm to 200 nm, and wall thicknesses between 5 and 50 nm. Transmission electron microscopy studies show that the resultant nanotubes are single-crystalline with a wurtzite structure, and are oriented along the direction. The present invention exemplifies single-crystalline nanotubes of materials with a non-layered crystal structure. Similar nullepitaxial-castingnull approaches could be used to produce arrays and single-crystalline nanotubes of other solid materials and semiconductors. Furthermore, the fabrication of multi-sheath nanotubes are described as well as nanotubes having multiple longitudinal segments.

Abstract translation: 描述了制造均匀纳米管的方法，其中纳米管在纳米线模板上合成为鞘，例如使用化学气相沉积工艺。 例如，单晶氧化锌（ZnO）纳米线被用作在其上外延生长氮化镓（GaN）的模板。 然后去除ZnO模板，例如通过热还原和蒸发。 完成的单晶GaN纳米管的内径优选为30nm至200nm，壁厚为5至50nm。 透射电子显微镜研究表明，所得纳米管是具有纤锌矿结构的单晶，沿着<001>方向取向。 本发明例示了具有非层状晶体结构的材料的单晶纳米管。 可以使用类似的“外延铸造”方法来生产其他固体材料和半导体的阵列和单晶纳米管。 此外，还描述了多皮纳米管的制造以及具有多个纵向段的纳米管。