Abstract:
A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/μm is demonstrated in a macroscopic emitter array. The emitter is comprised of a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.
Abstract translation:描述了能够以与热源相当的水平发射的冷阴极场致发射电子源。 在宏观发射极阵列中证明了在7.5V /μm下超过6A / cm 2的发射。 发射极由具有均匀分布的发射部位的单片和刚性多孔半导体纳米结构组成,并通过允许控制发射特性的室温工艺制造。 这些电子源可用于广泛的应用,包括微波电子学和医学和安全性的x射线成像。
Abstract:
A variable temperature assembly for scanning probe microscopy (SPM) is described which minimizes or eliminates motion of the sample caused by the thermal expansion or contraction of the sample holder assembly and platform/scanning stage on which the assembly is mounted, and minimizes heating or cooling of the platform/stage. In heater form, the variable temperature assembly includes a thin boron nitride puck with one or more high-resistivity wires embedded along an underside of the puck. The puck is suspended from its polished top surface by posts that are secured to the microscope stage. All thermal expansion of the puck occurs in the downward direction, away from the SPM probe-sample interface, thus eliminating relative motion between the probe tip and sample surface. The top surface of the puck remains stationary as a result of the unique geometry of the posts and the puck-post attachment configuration described herein.
Abstract:
A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/μm is demonstrated in a macroscopic emitter array. The emitter has a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.
Abstract translation:描述了能够以与热源相当的水平发射的冷阴极场致发射电子源。 在宏观发射极阵列中证明了在7.5V /μm下超过6A / cm 2的发射。 发射器具有均匀分布的发射位点的单片和刚性多孔半导体纳米结构,并且通过允许控制发射特性的室温工艺制造。 这些电子源可用于广泛的应用,包括微波电子学和医学和安全性的x射线成像。