Gate driver with serial communication

    公开(公告)号:US10312914B2

    公开(公告)日:2019-06-04

    申请号:US15854515

    申请日:2017-12-26

    发明人: Xiong Li Toru Tanaka

    摘要: A gate driver includes a drive signal input terminal, a drive signal output terminal, a gate drive circuit, and a serial communication interface. The drive signal input terminal is configured to receive a gate drive signal. The gate drive circuit is coupled to the drive signal input terminal and the drive signal output terminal. The gate drive circuit is configured to provide the gate drive signal to the drive signal output terminal. The serial communication interface is coupled to the drive signal input terminal.

    Reliabtility monitor for field effect transistor devices

    公开(公告)号:US11368150B2

    公开(公告)日:2022-06-21

    申请号:US16555482

    申请日:2019-08-29

    IPC分类号: H03K17/18 H03K17/687

    摘要: A device includes an output circuit configured to drive a gate of a field effect transistor (FET) in response to a drive signal. The FET includes a body diode. Control logic is configured to generate the drive signal to control the output circuit to drive the FET. A measurement circuit is configured to sample a first voltage across the FET in response to a first state of the drive signal and configured to sample a second voltage across the FET in response to a second state of the drive signal. The second state of the drive signal is different from the first state. The control logic is configured to determine a difference between the first voltage and a reference voltage. The control logic is configured to compare the difference to a degradation threshold to determine a level of degradation of the FET. The reference voltage is determined based on the second voltage.

    TEMPERATURE-SENSITIVE TRANSISTOR GATE DRIVER

    公开(公告)号:US20220029618A1

    公开(公告)日:2022-01-27

    申请号:US17495968

    申请日:2021-10-07

    发明人: Xiong Li Toru Tanaka

    IPC分类号: H03K17/14 G01K7/16 H03K17/16

    摘要: A system comprises a gate driver that is configured to couple to a transistor disposed in a transistor module via a first pin. The gate driver comprises a duty cycle measurement circuit having a first input terminal and a first output terminal, the first input terminal coupled to a second pin via an isolator. The duty cycle measurement circuit comprises a flip-flop, a counter, a shift register, and a comparator. The system comprises an analog to digital converter circuit having a second input terminal, a second output terminal, and a reference terminal, the second input terminal coupled to a third pin configured to couple to a temperature-sensitive device disposed in the transistor module, the second output terminal coupled to a fourth pin via the isolator, and the reference terminal coupled to the first output terminal.

    Temperature-sensitive transistor gate driver

    公开(公告)号:US11171640B2

    公开(公告)日:2021-11-09

    申请号:US15969034

    申请日:2018-05-02

    发明人: Xiong Li Toru Tanaka

    摘要: A system comprises a gate driver that is configured to couple to a transistor disposed in a transistor module via a first pin. The gate driver comprises a duty cycle measurement circuit having a first input terminal and a first output terminal, the first input terminal coupled to a second pin via an isolator. The duty cycle measurement circuit comprises a flip-flop, a counter, a shift register, and a comparator. The system comprises an analog to digital converter circuit having a second input terminal, a second output terminal, and a reference terminal, the second input terminal coupled to a third pin configured to couple to a temperature-sensitive device disposed in the transistor module, the second output terminal coupled to a fourth pin via the isolator, and the reference terminal coupled to the first output terminal.

    GATE DRIVER WITH SERIAL COMMUNICATION
    5.
    发明申请

    公开(公告)号:US20200153437A1

    公开(公告)日:2020-05-14

    申请号:US16741898

    申请日:2020-01-14

    发明人: Xiong Li Toru Tanaka

    摘要: A gate driver includes a drive signal input terminal, a drive signal output terminal, a gate drive circuit, and a serial communication interface. The drive signal input terminal is configured to receive a gate drive signal. The gate drive circuit is coupled to the drive signal input terminal and the drive signal output terminal. The gate drive circuit is configured to provide the gate drive signal to the drive signal output terminal. The serial communication interface is coupled to the drive signal input terminal.

    Gate driver with serial communication

    公开(公告)号:US10587268B2

    公开(公告)日:2020-03-10

    申请号:US16388353

    申请日:2019-04-18

    发明人: Xiong Li Toru Tanaka

    摘要: A gate driver includes a drive signal input terminal, a drive signal output terminal, a gate drive circuit, and a serial communication interface. The drive signal input terminal is configured to receive a gate drive signal. The gate drive circuit is coupled to the drive signal input terminal and the drive signal output terminal. The gate drive circuit is configured to provide the gate drive signal to the drive signal output terminal. The serial communication interface is coupled to the drive signal input terminal.

    Gate driver with VGTH and VCESAT measurement capability for the state of health monitor

    公开(公告)号:US10291225B2

    公开(公告)日:2019-05-14

    申请号:US15728230

    申请日:2017-10-09

    发明人: Xiong Li Anant Kamath

    摘要: An isolated insulated gate bipolar transistor (IGBT) gate driver is provided which integrates circuits, in-module, to support the measurements of threshold voltage, and collector-emitter saturation voltage of IGBTs. The measured gate threshold and collector-emitter saturation voltage can be used as precursors for state of health predictions for IGBTs. During the measurements, IGBTs are biased under specific conditions chosen to quickly elicit collector-emitter saturation and gate threshold information. Integrated analog-to-digital converter (ADC) circuits are used to convert measured analog signals to a digital format. The digitalized signals are transferred to a micro controller unit (MCU) for further processing through serial peripheral interface (SPI) circuits.

    Gate driver with VGTH and VCESAT measurement capability for the state of health monitor

    公开(公告)号:US11239839B2

    公开(公告)日:2022-02-01

    申请号:US17014828

    申请日:2020-09-08

    发明人: Xiong Li Anant Kamath

    摘要: In a power supply system, a high-side (HS) insulated-gate bipolar transistor (IGBT) has a first collector, a first gate, and a first emitter. A low-side (LS) IGBT has a second collector coupled to the first emitter, a second gate, and a second emitter. A gate drive circuit is coupled to the first gate of the HS IGBT and the second gate of the LS IGBT. A control circuit is coupled to the gate drive circuit. The control circuit is configured to control the gate drive circuit for biasing the HS IGBT to a HS saturation, and determine a HS degradation of the HS IGBT based on a HS digitized gate voltage of the HS IGBT in the HS saturation.

    Device with isolation barrier and fault detection

    公开(公告)号:US10992293B2

    公开(公告)日:2021-04-27

    申请号:US16137146

    申请日:2018-09-20

    IPC分类号: H03K17/08 H03K17/081

    摘要: A device that comprises a first semiconductor die and a second semiconductor die. The first semiconductor die comprises a first clock signal generator. The second semiconductor die comprises a fault detection circuit, the fault detection circuit comprising a second clock signal generator, a first counter coupled to the second clock signal generator, multiple storage devices coupled to the second clock signal generator and to the first counter, a logic gate coupled to the multiple storage devices, a second counter coupled to the logic gate and to the first clock signal generator, and a comparator coupled to the logic gate and the second counter.

    Gate driver with VGTH and VCESAT measurement capability for the state of health monitor

    公开(公告)号:US10771052B2

    公开(公告)日:2020-09-08

    申请号:US16371331

    申请日:2019-04-01

    发明人: Xiong Li Anant Kamath

    摘要: An isolated insulated gate bipolar transistor (IGBT) gate driver is provided which integrates circuits, in-module, to support the measurements of threshold voltage, and collector-emitter saturation voltage of IGBTs. The measured gate threshold and collector-emitter saturation voltage can be used as precursors for state of health predictions for IGBTs. During the measurements, IGBTs are biased under specific conditions chosen to quickly elicit collector-emitter saturation and gate threshold information. Integrated analog-to-digital converter (ADC) circuits are used to convert measured analog signals to a digital format. The digitalized signals are transferred to a micro controller unit (MCU) for further processing through serial peripheral interface (SPI) circuits.