公开(公告)号：US3629017A

公开(公告)日：1971-12-21

申请号：US3629017D

申请日：1969-10-01

Applicant: TELEFUNKEN PATENT

Inventor： STORK FRITZ

IPC: H01L21/00 ,  H01L21/263 ,  H01L23/485 ,  H01L29/00 ,  H01L7/46

CPC classification number: H01L23/485 ,  H01L21/00 ,  H01L21/2636 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of producing a semiconductor device, in which a region of a first conductivity type contains a plurality of regions of a second conductivity type, includes, after formation of the first conductivity type region, masking the semiconductor body to provide a plurality of uncovered areas and alloying into these areas a part of a foil placed on the semiconductor body by means of a specially controlled electron beam and leaving the nonalloyed part of the foil to provide electrical connection between the areas.

公开(公告)号：US3649807A

公开(公告)日：1972-03-14

申请号：US3649807D

申请日：1969-10-01

Applicant: TELEFUNKEN PATENT

Inventor： STORK FRITZ

IPC: H01L21/00 ,  H01L23/485 ,  H01L23/522 ,  B23K9/00

CPC classification number: H01L23/485 ,  H01L21/00 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of producing electrical contact to a semiconductor body having a partial covering of an insulating layer by cutting out parts of a metal foil placed thereon by means of a guided electron beam in such a way as to cause precipitation on the semiconductor device for the formation of conductive and/or resistive paths and alloying into noncovered portions of the semiconductor body for the formation of contacts joined to the conductive and/or resistive paths, and then removing the unused portions of the metal foil.

Abstract translation: 一种通过借助于引导电子束切割放置在其上的金属箔的部分以在半导体器件上形成沉淀的方法来制造具有绝缘层的部分覆盖物的半导体本体的电接触的方法 的导电和/或电阻路径，并且合金化成半导体本体的未覆盖部分，用于形成接合到导电和/或电阻路径的触点，然后去除金属箔的未使用部分。

公开(公告)号：US3705060A

公开(公告)日：1972-12-05

申请号：US3705060D

申请日：1969-12-01

Applicant: TELEFUNKEN PATENT

Inventor： STORK FRITZ

IPC: H01L21/00 ,  H01L23/29 ,  H01L23/482 ,  H01L23/485 ,  H01L49/02 ,  B32B31/14 ,  B44C1/22

CPC classification number: H01L23/485 ,  H01L21/00 ,  H01L23/293 ,  H01L23/482 ,  H01L49/02 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10S428/913 ,  Y10S438/942 ,  Y10S438/949 ,  H01L2924/00

Abstract: A METHOD OF PRODUCING A SEMICONDUCTOR OR THICK FILM DEVICE COMPRISES FORMING A LAYER OF ETCHING RESISTANT, TEMPERATURE RESISTANT AND LIGHT INSENSITIVE PLASTICS MATERIAL ON A CARRIER BODY, SUCH AS AN INSULATING MATERIAL OR SEMICONDUCTOR BODY AND REMOVING PREDETERMINED AREAS OF THE PLASTICS LAYER BY MEANS OF A CONTROLLED ELECTRON BEAM. THE AREAS OF THE CARRIER BODY FROM WHICH THE PLASTICS MATERIAL HAS BEEN REMOVED CAN BE USED FOR THE

REMOVAL OF FURTHER MATERIAL, DEPOSITING FURTHER MATERIAL OR THE INTRODUCTION OF FURTHER MATERIAL.