TRANSIENT VOLTAGE PROTECTION DEVICE
    2.
    发明公开

    公开(公告)号:US20240071655A1

    公开(公告)日:2024-02-29

    申请号:US18455984

    申请日:2023-08-25

    CPC classification number: H01C1/148 H01C7/12

    Abstract: A transient voltage protection device includes an element body formed with a cavity inside, a pair of internal electrodes, and a discharge assistance portion. The pair of internal electrodes are disposed in the element body and include edges. The edges include parts opposing each other in a first direction in the cavity. The discharge assistance portion is in contact with the parts of the edges. Each of the edges includes a first end exposed on an outer surface of the element body and a second end located opposite the first end and including a corner. The discharge assistance portion includes a pair of edges opposing each other in a second direction intersecting with the first direction and exposed to the cavity. The part included in each of the edges does not include the corner.

    CHIP VARISTOR
    5.
    发明申请
    CHIP VARISTOR 有权
    芯片变压器

    公开(公告)号:US20140167909A1

    公开(公告)日:2014-06-19

    申请号:US14102850

    申请日:2013-12-11

    CPC classification number: H01C7/123 H01C1/148 H01C7/1006 H01C7/18

    Abstract: An element body has first and second faces opposed to each other. A first conductor has one end exposed in a first face and the other end located in the element body. The second conductor has one end exposed in a second face and the other end located in the element body. The element body has a first element body section having the nonlinear voltage-current characteristics and a second element body section in which an electric current is more likely to flow than in the first element body section. The first element body section is located at least in part between the first conductor and the second conductor, in a direction in which the first conductor and the second conductor are separated from each other. The other end of the first conductor and the other end of the second conductor are located in the second element body section.

    Abstract translation: 元件主体具有彼此相对的第一和第二面。 第一导体的一端暴露在第一面中,另一端位于元件主体中。 第二导体的一端暴露在第二面中,另一端位于元件主体中。 元件主体具有非线性电压 - 电流特性的第一元件主体部分和电流比第一元件主体部分更容易流动的第二元件主体部分。 第一元件主体部分在第一导体和第二导体彼此分离的方向上至少部分地位于第一导体和第二导体之间。 第一导体的另一端和第二导体的另一端位于第二元件主体部分中。

    TRANSIENT VOLTAGE PROTECTION DEVICE

    公开(公告)号:US20220392701A1

    公开(公告)日:2022-12-08

    申请号:US17829569

    申请日:2022-06-01

    Abstract: A transient voltage protection device includes: an element body; a cavity portion provided in the element body; a pair of internal electrodes disposed in the element body; and a pair of external electrodes connected to the pair of internal electrodes. The pair of internal electrodes extend along a first direction and face each other in a second direction intersecting the first direction. The cavity portion includes a gap region located between the pair of internal electrodes in the second direction. A tip portion of at least one of the pair of internal electrodes is in contact with only the element body.

    MULTILAYER CHIP VARISTOR
    7.
    发明申请

    公开(公告)号:US20220165460A1

    公开(公告)日:2022-05-26

    申请号:US17533920

    申请日:2021-11-23

    Abstract: A multilayer chip varistor includes an element body, first and second external electrodes, and first and second electrical conductor groups. The first electrical conductor group includes a first internal electrode connected to the first external electrode, and a first intermediate electrical conductor opposed to the first internal electrode. The second electrical conductor group includes a second internal electrode including a first electrically conductive material and connected to the second external electrode, and a second intermediate electrical conductor opposed to the second internal electrode. At least one of the first and second intermediate electrical conductors includes the second electrically conductive material. The element body includes a low electrical resistance region between the first and second internal electrodes. The second electrically conductive material is diffused in the low electrical resistance region.

    METHOD FOR PRODUCING CHIP VARISTOR AND CHIP VARISTOR

    公开(公告)号:US20210327616A1

    公开(公告)日:2021-10-21

    申请号:US17230100

    申请日:2021-04-14

    Abstract: A chip varistor includes an element body exhibiting varistor characteristics, internal electrodes containing a first electrically conductive material, and an intermediate conductor containing a second electrically conductive material. The intermediate conductor is separated from the internal electrodes in a direction in which the internal electrodes oppose each other, and is disposed between the internal electrodes. At least a part of the intermediate conductor overlaps the internal electrodes in the direction in which the internal electrodes oppose each other. The element body includes a low resistance region in which the second electrically conductive material is diffused. The low resistance region is located between the first and second internal electrodes in the direction in which the first and second internal electrodes oppose each other.

    TRANSIENT VOLTAGE PROTECTION DEVICE
    9.
    发明公开

    公开(公告)号:US20240074039A1

    公开(公告)日:2024-02-29

    申请号:US18355525

    申请日:2023-07-20

    CPC classification number: H05K1/0257 H05K2201/0746

    Abstract: A transient voltage protection device includes an element body formed with a cavity inside, a pair of external electrodes on the element body, and a pair of internal electrodes in the element body. The pair of internal electrodes oppose each other. Each internal electrode is connected to a corresponding external electrode of the pair of external electrodes. The element body includes a first inner surface and a second inner surface. The first and second inner surfaces define the cavity and oppose each other. The pair of internal electrodes are exposed to the cavity and disposed on the first inner surface. In a cross section along a direction in which the first inner surface and the second inner surface oppose each other, the first inner surface includes a contour different from a contour included in the second inner surface.

    METHOD FOR PRODUCING CHIP VARISTOR AND CHIP VARISTOR

    公开(公告)号:US20220189665A1

    公开(公告)日:2022-06-16

    申请号:US17687752

    申请日:2022-03-07

    Abstract: A chip varistor includes an element body exhibiting varistor characteristics, internal electrodes containing a first electrically conductive material, and an intermediate conductor containing a second electrically conductive material. The intermediate conductor is separated from the internal electrodes in a direction in which the internal electrodes oppose each other, and is disposed between the internal electrodes. At least a part of the intermediate conductor overlaps the internal electrodes in the direction in which the internal electrodes oppose each other. The element body includes a low resistance region in which the second electrically conductive material is diffused. The low resistance region is located between the first and second internal electrodes in the direction in which the first and second internal electrodes oppose each other.

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