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公开(公告)号：US20240045240A1
公开(公告)日：2024-02-08
申请号：US17816764
申请日：2022-08-02
Inventor： CHIH-TSUNG SHIH , FENG YUAN , WEI-KANG LIU , YINGKIT FELIX TSUI
CPC classification number: G02F1/025 , G02B6/12004 , G02B2006/12142 , G02B2006/12061 , G02B2006/12123
Abstract: A method includes receiving a silicon substrate; forming a first doped region and a second doped region in the silicon substrate; forming a third doped region and fourth doped region on upper portions of the first doped region and the second doped region, respectively; and patterning the silicon substrate to form an optical modulator. The optical modulator includes: a first section; a second section and a third section at least formed from the first and second doped regions, respectively; a fourth section, including a first height less than that of the first section and the second section and arranged between the first section and the second section, the fourth section being an undoped region; and a fifth section immediately adjacent to the fourth section, the fifth section including a height less than that of the first section and the second section and different from the first height.
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公开(公告)号：US20240377659A1
公开(公告)日：2024-11-14
申请号：US18314817
申请日：2023-05-10
Inventor： WEN-SHUN LO , YINGKIT FELIX TSUI , JING-HWANG YANG
IPC: G02F1/015
Abstract: The present disclosure provides an optical modulating structure. The optical modulating structure includes a lower member extending along an insulating layer, a first protrusion over the lower member, and a second protrusion over the lower member and separated from the first protrusion. A first mask layer is formed over the optical modulating structure, wherein the first mask layer covers the second protrusion and a first portion of the lower member between the first protrusion and the second protrusion. A first doping region is formed in an exposed portion of the lower member and at least a portion of an exposed sidewall of the first protrusion. A dielectric layer is formed between the first protrusion and the second protrusion. A method for manufacturing the optical modulating structure is also provided.
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公开(公告)号：US20240369764A1
公开(公告)日：2024-11-07
申请号：US18779056
申请日：2024-07-21
Inventor： CHIH-TSUNG SHIH , WEI-KANG LIU , SUI-YING HSU , JING-HWANG YANG , YINGKIT FELIX TSUI
Abstract: A semiconductor structure includes a grating coupler structure, a circuit component separated from the grating coupler structure, an inter level dielectric layer, a capping layer over the inter level dielectric layer, and a passivation layer over the capping layer. The inter level dielectric layer has a first refractive index, the capping layer has second refractive index, and the passivation layer has a third refractive index. The second refractive index is greater than the first refractive index, and is greater than the third refractive index.
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公开(公告)号：US20240178211A1
公开(公告)日：2024-05-30
申请号：US18432111
申请日：2024-02-05
Inventor： HSIN-LI CHENG , SHU-HUI SU , YU-CHI CHANG , YINGKIT FELIX TSUI , SHIH-FEN HUANG
CPC classification number: H01L25/18 , H01L24/05 , H01L24/08 , H01L2224/05624 , H01L2224/05647 , H01L2224/05666 , H01L2224/05684 , H01L2224/08145
Abstract: A semiconductor device is provided. The semiconductor device comprises a first semiconductor die comprising a first capacitor, and a second semiconductor die in contact with the first semiconductor die and comprises a diode. The first semiconductor die and the second semiconductor die are arranged along a first direction, and a diode is configured to direct electrons accumulated at the first capacitor to a ground.
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公开(公告)号：US20240113091A1
公开(公告)日：2024-04-04
申请号：US18155076
申请日：2023-01-17
Inventor： WEN-SHUN LO , JING-HWANG YANG , YINGKIT FELIX TSUI
IPC: H01L25/16 , G02B6/42 , H01L23/48 , H01L23/498 , H01L23/522 , H01L23/538
CPC classification number: H01L25/167 , G02B6/4214 , H01L23/481 , H01L23/49816 , H01L23/5226 , H01L23/538 , H01L24/08 , H01L2224/08145
Abstract: The present disclosure provides a package with a semiconductor structure and a method for manufacturing the semiconductor structure. In some embodiments, a photonic semiconductor structure includes a substrate having a first side and a second side opposite to each other, a first redistribution layer disposed on the first side, an interconnect structure disposed on the second side of the substrate, a metal reflector disposed in the interconnect structure, a dielectric layer disposed over the interconnect structure, and a grating coupler disposed in the dielectric layer and overlapping the metal reflector.
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Patent Agency Ranking
公开(公告)号：US20230296928A1
公开(公告)日：2023-09-21
申请号：US17695837
申请日：2022-03-16
Inventor： WEN-SHUN LO , YINGKIT FELIX TSUI
IPC: G02F1/025
CPC classification number: G02F1/025 , G02F2201/063
Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor substrate, a first dielectric layer, a second dielectric layer, a light modulator, a heater, and a first conductive contact. The first dielectric layer is disposed on the semiconductor substrate. The second dielectric layer is disposed on the first dielectric layer. The light modulator is disposed in the first dielectric layer. The heater is disposed in the second dielectric layer and above the light modulator. The first conductive contact is electrically connected to the light modulator. A top surface of the heater is coplanar with a top surface of the first conductive contact.
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公开(公告)号：US20250017004A1
公开(公告)日：2025-01-09
申请号：US18347542
申请日：2023-07-05
Inventor： CHUN-YAO KO , LIANG-TAI KUO , SHIH-HSIEN CHEN , YINGKIT FELIX TSUI
IPC: H10B41/10 , H01L29/423 , H01L29/788 , H10B41/70
Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate, a transistor, and a capacitor. The transistor includes a gate electrode disposed on the substrate. The capacitor is electrically connected to the transistor and includes a capacitor dielectric and a capacitor electrode. The capacitor dielectric and the capacitor electrode are stacked over the gate electrode of the transistor.
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公开(公告)号：US20240045141A1
公开(公告)日：2024-02-08
申请号：US17817041
申请日：2022-08-03
Inventor： CHIH-TSUNG SHIH , WEI-KANG LIU , SUI-YING HSU , JING-HWANG YANG , YINGKIT FELIX TSUI
IPC: G02B6/124
CPC classification number: G02B6/124 , G02B2006/12107
Abstract: A semiconductor structure includes a substrate, a grating coupler structure over the substrate, a multi-layers film structure over the grating coupler structure. The multi-layers film structure include a first layer including a first refractive index, a second layer over the first layer and including a second refractive index and a third layer over the second layer and including a third refractive index. The second refractive index is greater than the first refractive index and is greater than the third refractive index of the third layer, and a thickness of each layer of the multi-layers film structure is within a range from λ/4 to λ2, λ is a wavelength of light.
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公开(公告)号：US20240019639A1
公开(公告)日：2024-01-18
申请号：US17812192
申请日：2022-07-13
Inventor： WEI-KANG LIU , CHIH-TSUNG SHIH , HAU-YAN LU , YINGKIT FELIX TSUI
CPC classification number: G02B6/305 , G02B6/1228 , G02B2006/12147
Abstract: An edge coupler, a waveguide structure and a method for forming a waveguide structure are provided. The edge coupler includes a substrate, a first cladding layer, a core layer and a first anti-reflection coating layer. The first cladding layer has a second sidewall aligned with a first sidewall of the substrate. The core layer has a third sidewall aligned with the second sidewall. The anti-reflection coating layer lines the first sidewall, the second sidewall and the third sidewall. A thickness of the anti-reflection coating layer varies along the first sidewall, the second sidewall and the third sidewall.
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10.发明公开公开(公告)号：US20230387334A1
公开(公告)日：2023-11-30
申请号：US17824923
申请日：2022-05-26
Inventor： WEI-KANG LIU , CHIH-TSUNG SHIH , HAU-YAN LU , YINGKIT FELIX TSUI
IPC: H01L31/0232 , H01L31/02 , H01L31/18 , G02B6/42
CPC classification number: H01L31/02327 , H01L31/02019 , H01L31/18 , G02B6/4214
Abstract: A method for manufacturing an integrated circuit device is provided. The method includes: providing a photonic structure including an insulating structure and an optical coupler embedded in the insulating structure; and removing a portion of the insulating structure to expose a coupling surface of the optical coupler and form a light reflective structure corresponding to the coupling surface.
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