公开(公告)号：US20190115313A1

公开(公告)日：2019-04-18

申请号：US16229585

申请日：2018-12-21

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： ALEXANDER KALNITSKY ,  YI-YANG LEI ,  HSI-CHING WANG ,  CHENG-YU KUO ,  TSUNG LUNG HUANG ,  CHING-HUA HSIEH ,  CHUNG-SHI LIU ,  CHEN-HUA YU ,  CHIN-YU KU ,  DE-DUI LIAO ,  KUO-CHIO LIU ,  KAI-DI WU ,  KUO-PIN CHANG ,  SHENG-PIN YANG ,  ISAAC HUANG

IPC分类号： H01L23/00 ,  H01L21/78 ,  H01L21/683

CPC分类号： H01L24/83 ,  H01L21/6835 ,  H01L21/78 ,  H01L24/03 ,  H01L24/73 ,  H01L24/92 ,  H01L24/94 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/2919 ,  H01L2224/73204 ,  H01L2224/83201 ,  H01L2224/8385 ,  H01L2224/921 ,  H01L2224/94 ,  H01L2924/06 ,  H01L2924/07025 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/014

摘要： A method of manufacturing a semiconductor structure includes receiving a first substrate including an IMD layer disposed over the first substrate and a plurality of conductive bumps disposed in the IMD layer; receiving a second substrate; disposing a patterned adhesive over the first substrate, wherein at least a portion of the IMD layer is exposed through the patterned adhesive; and bonding the first substrate with the second substrate, wherein a top surface of the at least portion of the IMD layer is exposed through the patterned adhesive after bonding the first substrate with the second substrate.

公开(公告)号：US20160365332A1

公开(公告)日：2016-12-15

申请号：US14738109

申请日：2015-06-12

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： ALEXANDER KALNITSKY ,  YI-YANG LEI ,  HSI-CHING WANG ,  CHENG-YU KUO ,  TSUNG LUNG HUANG ,  CHING-HUA HSIEH ,  CHUNG-SHI LIU ,  CHEN-HUA YU ,  CHIN-YU KU ,  DE-DUI LIAO ,  KUO-CHIO LIU ,  KAI-DI WU ,  KUO-PIN CHANG ,  SHENG-PIN YANG ,  ISAAC HUANG

IPC分类号： H01L23/00 ,  H01L21/78

CPC分类号： H01L24/83 ,  H01L21/6835 ,  H01L21/78 ,  H01L24/03 ,  H01L24/73 ,  H01L24/92 ,  H01L24/94 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/2919 ,  H01L2224/73204 ,  H01L2224/83201 ,  H01L2224/8385 ,  H01L2224/921 ,  H01L2224/94 ,  H01L2924/06 ,  H01L2924/07025 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/014

摘要： A method of manufacturing a semiconductor structure, comprising: receiving a first substrate including a first surface, a second surface opposite to the first surface and a plurality of conductive bumps disposed over the first surface; receiving a second substrate; disposing an adhesive over the first substrate or the second substrate; heating the adhesive in a first ambiance; bonding the first substrate with the second substrate by applying a force of less than about 10,000N upon the first substrate or the second substrate and heating the adhesive in a second ambiance; and thinning down a thickness of the first substrate from the second surface.

摘要翻译： 一种制造半导体结构的方法，包括：接收包括第一表面，与第一表面相对的第二表面的第一基板和设置在第一表面上的多个导电凸块; 接收第二基板; 在所述第一基板或所述第二基板上设置粘合剂; 以第一种氛围加热粘合剂; 通过在第一基板或第二基板上施加小于约10,000N的力将第一基板与第二基板接合并以第二氛围加热粘合剂; 以及从所述第二表面减薄所述第一基板的厚度。

公开(公告)号：US20200152599A1

公开(公告)日：2020-05-14

申请号：US16742349

申请日：2020-01-14

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： ALEXANDER KALNITSKY ,  YI-YANG LEI ,  HSI-CHING WANG ,  CHENG-YU KUO ,  TSUNG LUNG HUANG ,  CHING-HUA HSIEH ,  CHUNG-SHI LIU ,  CHEN-HUA YU ,  CHIN-YU KU ,  DE-DUI LIAO ,  KUO-CHIO LIU ,  KAI-DI WU ,  KUO-PIN CHANG ,  SHENG-PIN YANG ,  ISAAC HUANG

IPC分类号： H01L23/00 ,  H01L21/78 ,  H01L21/683

摘要： A method of manufacturing a semiconductor structure is provided. The method includes providing a first substrate including a plurality of conductive bumps disposed over the first substrate; providing a second substrate; disposing a patterned adhesive over the first substrate, wherein at least a portion of the plurality of conductive bumps is exposed through the patterned adhesive; bonding the first substrate with the second substrate; and singulating a chip from the first substrate.

公开(公告)号：US20180047701A1

公开(公告)日：2018-02-15

申请号：US15790749

申请日：2017-10-23

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： ALEXANDER KALNITSKY ,  YI-YANG LEI ,  HSI-CHING WANG ,  CHENG-YU KUO ,  TSUNG LUNG HUANG ,  CHING-HUA HSIEH ,  CHUNG-SHI LIU ,  CHEN-HUA YU ,  CHIN-YU KU ,  DE-DUI LIAO ,  KUO-CHIO LIU ,  KAI-DI WU ,  KUO-PIN CHANG ,  SHENG-PIN YANG ,  ISAAC HUANG

IPC分类号： H01L23/00 ,  H01L21/78

CPC分类号： H01L24/83 ,  H01L21/6835 ,  H01L21/78 ,  H01L24/03 ,  H01L24/73 ,  H01L24/92 ,  H01L24/94 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/2919 ,  H01L2224/73204 ,  H01L2224/83201 ,  H01L2224/8385 ,  H01L2224/921 ,  H01L2224/94 ,  H01L2924/06 ,  H01L2924/07025 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/014

摘要： A method of manufacturing a semiconductor structure, including receiving a first substrate including a plurality of conductive bumps disposed over the first substrate; receiving a second substrate; disposing an adhesive over the first substrate; removing a portion of the adhesive to expose at least one of the plurality of conductive bumps; and bonding the first substrate with the second substrate.