公开(公告)号：US12062687B2

公开(公告)日：2024-08-13

申请号：US18215707

申请日：2023-06-28

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Hong-Yang Chen ,  Tian Sheng Lin ,  Yi-Cheng Chiu ,  Hung-Chou Lin ,  Yi-Min Chen ,  Kuo-Ming Wu ,  Chiu-Hua Chung

IPC分类号： H01L27/108 ,  H01L27/01 ,  H01L27/06 ,  H01L29/76 ,  H01L31/119 ,  H01L49/02

CPC分类号： H01L28/60 ,  H01L27/01 ,  H01L27/0629

摘要： A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.

公开(公告)号：US11728374B2

公开(公告)日：2023-08-15

申请号：US17498561

申请日：2021-10-11

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Hong-Yang Chen ,  Tian Sheng Lin ,  Yi-Cheng Chiu ,  Hung-Chou Lin ,  Yi-Min Chen ,  Kuo-Ming Wu ,  Chiu-Hua Chung

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L31/119 ,  H01L49/02 ,  H01L27/01 ,  H01L27/06

CPC分类号： H01L28/60 ,  H01L27/01 ,  H01L27/0629

摘要： A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.

公开(公告)号：US11923425B2

公开(公告)日：2024-03-05

申请号：US18170709

申请日：2023-02-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yi-Cheng Chiu ,  Tian Sheng Lin ,  Hung-Chou Lin ,  Yi-Min Chen ,  Chiu-Hua Chung

IPC分类号： H01L29/40 ,  H01L21/765 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/402 ,  H01L21/765 ,  H01L29/0653 ,  H01L29/66681 ,  H01L29/7816

摘要： A method for manufacturing a device may include providing an ultra-high voltage (UHV) component that includes a source region and a drain region, and forming an oxide layer on a top surface of the UHV component. The method may include connecting a low voltage terminal to the source region of the UHV component, and connecting a high voltage terminal to the drain region of the UHV component. The method may include forming a shielding structure on a surface of the oxide layer provided above the drain region of the UHV component, forming a high voltage interconnection that connects to the shielding structure and to the high voltage terminal, and forming a metal routing that connects the shielding structure and the low voltage terminal.

公开(公告)号：US20230343816A1

公开(公告)日：2023-10-26

申请号：US18215707

申请日：2023-06-28

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Hong-Yang CHEN ,  Tian Sheng Lin ,  Yi-Cheng Chiu ,  Hung-Chou Lin ,  Yi-Min Chen ,  Kuo-Ming Wu ,  Chiu-Hua Chung

IPC分类号： H01G4/30 ,  H01L27/01 ,  H01L27/06

CPC分类号： H01L28/60 ,  H01L27/01 ,  H01L27/0629

摘要： A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.