公开(公告)号：US10283450B2

公开(公告)日：2019-05-07

申请号：US15672780

申请日：2017-08-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Jian-Hong Lin ,  Chwei-Ching Chiu ,  Yung-Huei Lee ,  Chien-Neng Liao ,  Yu-Lun Chueh ,  Tsung-Cheng Chan ,  Chun-Lung Huang

IPC: H01L23/48 ,  H01L23/528 ,  H01L23/532 ,  H01L21/288 ,  H01L21/768

Abstract: A method, for forming a semiconductor device structure, includes: forming a conductive structure over a substrate, wherein the conductive structure includes twin boundaries. The forming the conductive structure includes: manipulating process conditions so as to promote formation of the twin boundaries and yet control a density of the twin boundaries to be outside a range for which a portion of a curve is an asymptote of a constant value, the curve representing values of an atomic migration ratio corresponding to values of the density of the twin boundaries.

公开(公告)号：US20140145194A1

公开(公告)日：2014-05-29

申请号：US14166686

申请日：2014-01-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Bi-Ling Lin ,  Jian-Hong Lin ,  Ming-Hong Hsieh ,  Lee-Der Chen ,  Jiaw-Ren Shih ,  Chwei-Ching Chiu

IPC: H01L23/525 ,  H01L21/66 ,  H01L23/522

CPC classification number: H01L23/5256 ,  G01R31/2853 ,  G01R31/2858 ,  G01R31/2884 ,  H01L22/34 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor device components and methods are disclosed. In one embodiment, a semiconductor device component includes a conductive segment having a first surface, a second surface opposite the first surface, a first end, and a second end opposite the first end. A first via is coupled to the second surface of the conductive segment at the first end. A second via is coupled to the first surface of the conductive segment at the second end, and a third via is coupled to the second surface of the conductive segment at the second end.

Abstract translation: 公开了半导体器件组件和方法。 在一个实施例中，半导体器件部件包括具有第一表面，与第一表面相对的第二表面，第一端和与第一端相对的第二端的导电段。 第一通孔在第一端耦合到导电段的第二表面。 第二通孔在第二端处耦合到导电段的第一表面，并且第三通孔在第二端耦合到导电段的第二表面。

公开(公告)号：US09449919B2

公开(公告)日：2016-09-20

申请号：US14621067

申请日：2015-02-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Jian-Hong Lin ,  Hsin-Chun Chang ,  Shiou-Fan Chen ,  Chwei-Ching Chiu ,  Yung-Huei Lee

IPC: H01L23/528 ,  H01L23/522 ,  G06F17/50 ,  H01L21/768

CPC classification number: H01L21/76879 ,  G06F17/5072 ,  G06F17/5077 ,  H01L21/76802 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/0207

Abstract: A semiconductor device includes a first interconnect structure. The first interconnect structure includes a first interconnect portion, a second interconnect portion and a third interconnect portion. The first interconnect portion has a width and a length. The second interconnect portion has a width less than the length of the first interconnect portion. The second interconnect portion is connected to the first interconnect portion. The third interconnect portion has a width less than the width of the second interconnect portion. The third interconnect portion is connected to the second interconnect portion.

Abstract translation: 半导体器件包括第一互连结构。 第一互连结构包括第一互连部分，第二互连部分和第三互连部分。 第一互连部分具有宽度和长度。 第二互连部分的宽度小于第一互连部分的长度。 第二互连部分连接到第一互连部分。 第三互连部分的宽度小于第二互连部分的宽度。 第三互连部分连接到第二互连部分。

公开(公告)号：US09941159B2

公开(公告)日：2018-04-10

申请号：US15255333

申请日：2016-09-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Jian-Hong Lin ,  Hsin-Chun Chang ,  Shiou-Fan Chen ,  Chwei-Ching Chiu ,  Yung-Huei Lee

IPC: H01L23/528 ,  H01L23/522 ,  H01L21/768 ,  G06F17/50

CPC classification number: H01L21/76879 ,  G06F17/5072 ,  G06F17/5077 ,  H01L21/76802 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/0207

Abstract: A method of making a semiconductor device includes forming a first opening in an insulating layer, forming a second opening in the insulating layer, forming a third opening in the insulating layer and filling the first opening, the second opening and the third opening with a conductive material. The first opening has a width and a length. The second opening has a width less than the length of the first opening, and is electrically connected to the first opening. The third opening has a width less than the width of the second opening, and is electrically connected to the second opening.

公开(公告)号：US10475742B2

公开(公告)日：2019-11-12

申请号：US16205997

申请日：2018-11-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Jian-Hong Lin ,  Chwei-Ching Chiu ,  Yung-Huei Lee ,  Chien-Neng Liao ,  Yu-Lun Chueh ,  Tsung-Cheng Chan ,  Chun-Lung Huang

IPC: H01L23/48 ,  H01L23/528 ,  H01L23/532 ,  H01L21/288 ,  H01L21/768

Abstract: A method of forming a semiconductor device structure includes: forming a first conductive structure over a substrate, the first conductive structure including twin boundaries; and wherein the forming the first conductive structure includes manipulating process conditions so as to promote formation of the twin boundaries resulting in a promoted density of twin boundaries such that the first conductive structure has an increased failure current density (FCD) relative to a baseline FCD of an otherwise substantially corresponding second conductive structure which has an unpromoted density of twin boundaries, the unpromoted density being less than the promoted density and such that the first conductive structure has a resistance which is substantially the same as the second conductive structure.

公开(公告)号：US09875964B2

公开(公告)日：2018-01-23

申请号：US14166686

申请日：2014-01-28

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Bi-Ling Lin ,  Jian-Hong Lin ,  Ming-Hong Hsieh ,  Lee-Der Chen ,  Jiaw-Ren Shih ,  Chwei-Ching Chiu

IPC: H01L23/48 ,  H01L23/525 ,  H01L21/66 ,  H01L23/522 ,  G01R31/28

CPC classification number: H01L23/5256 ,  G01R31/2853 ,  G01R31/2858 ,  G01R31/2884 ,  H01L22/34 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor device components and methods are disclosed. In one embodiment, a semiconductor device component includes a conductive segment having a first surface, a second surface opposite the first surface, a first end, and a second end opposite the first end. A first via is coupled to the second surface of the conductive segment at the first end. A second via is coupled to the first surface of the conductive segment at the second end, and a third via is coupled to the second surface of the conductive segment at the second end.