公开(公告)号：US20250062259A1

公开(公告)日：2025-02-20

申请号：US18450603

申请日：2023-08-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Chien Hsiao ,  Chao-Wen Shih ,  Kuo-Chiang Ting ,  Yen-Ming Chen

IPC: H01L23/00 ,  H01L25/065

Abstract: A semiconductor device and methods of manufacture are discussed herein. A device includes a first semiconductor package including a first semiconductor die encapsulated in an insulating material, a first thermal expansion resistant layer over the first semiconductor die, a bonding layer over the first thermal expansion resistant layer and the insulating material, and a second semiconductor die directly bonded to the bonding layer.

公开(公告)号：US11245176B2

公开(公告)日：2022-02-08

申请号：US16740464

申请日：2020-01-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Chien Hsiao ,  Chen-Hua Yu ,  Chung-Shi Liu ,  Chao-Wen Shih ,  Shou-Zen Chang

IPC: H01L23/498 ,  H01Q1/22 ,  H01L23/66 ,  H01L21/56 ,  H01L23/31 ,  H01Q1/24 ,  H01Q9/04 ,  H01Q19/06 ,  H01Q25/00 ,  H01L21/683 ,  H01Q21/06 ,  H01Q21/29

Abstract: In accordance with some embodiments, a package structure includes an RFIC chip. an insulating encapsulation, a redistribution circuit structure, an antenna and a microwave director. The insulating encapsulation encapsulates the RFIC chip. The redistribution circuit structure is disposed on the insulating encapsulation and electrically connected to the RFIC chip. The antenna is disposed on the insulating encapsulation and electrically connected to the RFIC chip through the redistribution circuit structure. The antenna is located between the microwave director and the RFIC chip. The microwave director has a microwave directivity enhancement surface located at a propagating path of a microwave received or generated by the antenna.

公开(公告)号：US11004809B2

公开(公告)日：2021-05-11

申请号：US16426365

申请日：2019-05-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yung-Ping Chiang ,  Yi-Che Chiang ,  Nien-Fang Wu ,  Min-Chien Hsiao ,  Chao-Wen Shih ,  Shou-Zen Chang ,  Chung-Shi Liu ,  Chen-Hua Yu

IPC: H01L23/66 ,  H01L23/00 ,  H01L23/552 ,  H01L23/31 ,  H01L25/065 ,  H01L21/683 ,  H01Q9/04 ,  H01Q21/06 ,  H01Q21/00 ,  H01L21/56 ,  H01L23/538 ,  H01Q1/22 ,  H01Q21/22

Abstract: Structures and formation methods of a chip package are provided. The chip package includes a semiconductor die having a conductive element and a first protective layer surrounding the semiconductor die. The chip package also includes a second protective layer over the semiconductor die and the first protective layer. The chip package further includes an antenna element over the second protective layer. The antenna element is electrically connected to the conductive element of the semiconductor die.

公开(公告)号：US20200153083A1

公开(公告)日：2020-05-14

申请号：US16740464

申请日：2020-01-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Chien Hsiao ,  Chen-Hua Yu ,  Chung-Shi Liu ,  Chao-Wen Shih ,  Shou-Zen Chang

IPC: H01Q1/22 ,  H01Q25/00 ,  H01Q19/06 ,  H01Q9/04 ,  H01Q1/24 ,  H01L23/31 ,  H01L21/56 ,  H01L23/66 ,  H01L23/498 ,  H01L21/683

Abstract: In accordance with some embodiments, a package structure includes an RFIC chip. an insulating encapsulation, a redistribution circuit structure, an antenna and a microwave director. The insulating encapsulation encapsulates the RFIC chip. The redistribution circuit structure is disposed on the insulating encapsulation and electrically connected to the RFIC chip. The antenna is disposed on the insulating encapsulation and electrically connected to the RFIC chip through the redistribution circuit structure. The antenna is located between the microwave director and the RFIC chip. The microwave director has a microwave directivity enhancement surface located at a propagating path of a microwave received or generated by the antenna.

公开(公告)号：US20190252762A1

公开(公告)日：2019-08-15

申请号：US16396769

申请日：2019-04-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Chien Hsiao ,  Chen-Hua Yu ,  Chung-Shi Liu ,  Chao-Wen Shih ,  Shou-Zen Chang

IPC: H01Q1/22 ,  H01L23/31 ,  H01L21/56 ,  H01L23/66 ,  H01Q25/00 ,  H01Q1/24 ,  H01Q9/04 ,  H01Q19/06 ,  H01L23/498

Abstract: In accordance with some embodiments, a package structure includes an RFIC chip. an insulating encapsulation, a redistribution circuit structure, an antenna and a microwave director. The insulating encapsulation encapsulates the RFIC chip. The redistribution circuit structure is disposed on the insulating encapsulation and electrically connected to the RFIC chip. The antenna is disposed on the insulating encapsulation and electrically connected to the RFIC chip through the redistribution circuit structure. The antenna is located between the microwave director and the RFIC chip. The microwave director has a microwave directivity enhancement surface located at a propagating path of a microwave received or generated by the antenna.

公开(公告)号：US20230378012A1

公开(公告)日：2023-11-23

申请号：US17896840

申请日：2022-08-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Der-Chyang Yeh ,  Chao-Wen Shih ,  Sung-Feng Yeh ,  Ta Hao Sung ,  Min-Chien Hsiao ,  Chun-Chiang Kuo ,  Tsung-Shu Lin

IPC: H01L23/31 ,  H01L21/56 ,  H01L25/065 ,  H01L25/00 ,  H01L23/00 ,  H01L25/10

CPC classification number: H01L23/3192 ,  H01L21/568 ,  H01L23/3185 ,  H01L25/0655 ,  H01L25/0652 ,  H01L25/50 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L24/20 ,  H01L25/105 ,  H01L24/19 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L24/06 ,  H01L2224/06181 ,  H01L2224/08145 ,  H01L2224/80201 ,  H01L2224/80896 ,  H01L2224/211 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1041 ,  H01L2224/19

Abstract: In an embodiment, a device includes: a first integrated circuit die; a second integrated circuit die; a gap-fill dielectric between a first sidewall of the first integrated circuit die and a second sidewall of the second integrated circuit die; a protective cap overlapping the gap-fill dielectric, the first sidewall of the first integrated circuit die, and the second sidewall of the second integrated circuit die; and an isolation layer around the protective cap, the isolation layer disposed on the first integrated circuit die, and the second integrated circuit die.

公开(公告)号：US11264362B2

公开(公告)日：2022-03-01

申请号：US16886698

申请日：2020-05-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Fa Chen ,  Chao-Wen Shih ,  Min-Chien Hsiao ,  Nien-Fang Wu ,  Sung-Feng Yeh ,  Tzuan-Horng Liu

IPC: H01L21/00 ,  H01L25/065 ,  H01L23/31 ,  H01L23/48 ,  H01L23/00 ,  H01L21/304 ,  H01L21/78

Abstract: A die stack structure including a first semiconductor die, a second semiconductor die, an insulating encapsulation and a redistribution circuit structure is provided. The first semiconductor die includes a first semiconductor substrate including a first portion and a second portion, a first interconnect structure and a first bonding structure. The first interconnect structure is disposed on a top surface of the second portion, a lateral dimension of the first portion is greater than a lateral dimension of the top surface of the second portion. The second semiconductor die is disposed on the first semiconductor die and includes a second bonding structure, the second semiconductor die is electrically connected with the first semiconductor die through the first and second bonding structures. The insulating encapsulation is disposed on the first portion and laterally encapsulating the second portion and the second semiconductor die. The redistribution circuit structure is electrically connected with the first and second semiconductor dies, and the lateral dimension of the first portion is greater than a lateral dimension of the redistribution circuit structure.

公开(公告)号：US20210375826A1

公开(公告)日：2021-12-02

申请号：US16886698

申请日：2020-05-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Fa Chen ,  Chao-Wen Shih ,  Min-Chien Hsiao ,  Nien-Fang Wu ,  Sung-Feng Yeh ,  Tzuan-Horng Liu

IPC: H01L25/065 ,  H01L23/31 ,  H01L23/48 ,  H01L23/00 ,  H01L21/78 ,  H01L21/304

Abstract: A die stack structure including a first semiconductor die, a second semiconductor die, an insulating encapsulation and a redistribution circuit structure is provided. The first semiconductor die includes a first semiconductor substrate including a first portion and a second portion, a first interconnect structure and a first bonding structure. The first interconnect structure is disposed on a top surface of the second portion, a lateral dimension of the first portion is greater than a lateral dimension of the top surface of the second portion. The second semiconductor die is disposed on the first semiconductor die and includes a second bonding structure, the second semiconductor die is electrically connected with the first semiconductor die through the first and second bonding structures. The insulating encapsulation is disposed on the first portion and laterally encapsulating the second portion and the second semiconductor die. The redistribution circuit structure is electrically connected with the first and second semiconductor dies, and the lateral dimension of the first portion is greater than a lateral dimension of the redistribution circuit structure.

公开(公告)号：US20240404991A1

公开(公告)日：2024-12-05

申请号：US18328430

申请日：2023-06-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Wen Shih ,  Min-Chien Hsiao ,  Kuo-Chiang Ting ,  Yen-Ming Chen ,  Ashish Kumar Sahoo ,  Chen-Sheng Lin ,  Hsin-Yu Pan

IPC: H01L25/065 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

Abstract: Embodiments include methods of forming three-dimensional packages and the packages resulting therefrom. The packages may utilize a bridge die to electrically connect one die to another die and at least one additional die adjacent to the bridge die. The height-to-width ratio of the gap between the bridge die and the at least one additional die is controlled by thinning the bridge die to be thinner than the at least one additional die. The packages may utilize landing structures to adjoin a dielectric material of an attached die to a metallic landing structure of a base die.

公开(公告)号：US10535913B2

公开(公告)日：2020-01-14

申请号：US16396769

申请日：2019-04-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Chien Hsiao ,  Chen-Hua Yu ,  Chung-Shi Liu ,  Chao-Wen Shih ,  Shou-Zen Chang

IPC: H01L21/56 ,  H01Q1/22 ,  H01L23/498 ,  H01L23/66 ,  H01L23/31 ,  H01Q1/24 ,  H01Q9/04 ,  H01Q19/06 ,  H01Q25/00 ,  H01L21/683 ,  H01Q21/06 ,  H01Q21/29

Abstract: In accordance with some embodiments, a package structure includes an RFIC chip. an insulating encapsulation, a redistribution circuit structure, an antenna and a microwave director. The insulating encapsulation encapsulates the RFIC chip. The redistribution circuit structure is disposed on the insulating encapsulation and electrically connected to the RFIC chip. The antenna is disposed on the insulating encapsulation and electrically connected to the RFIC chip through the redistribution circuit structure. The antenna is located between the microwave director and the RFIC chip. The microwave director has a microwave directivity enhancement surface located at a propagating path of a microwave received or generated by the antenna.