公开(公告)号：US08618563B2

公开(公告)日：2013-12-31

申请号：US12693263

申请日：2010-01-25

Applicant: Sun Kyung Kim ,  Hyun Don Song ,  Jin Wook Lee

Inventor： Sun Kyung Kim ,  Hyun Don Song ,  Jin Wook Lee

IPC: H01L27/15

CPC classification number: H01L33/20

Abstract: A light emitting device including a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first photonic crystal structure on the light emitting structure; a lower encapsulant on the first photonic crystal structure; and a second photonic crystal structure on the lower encapsulant.

Abstract translation: 一种发光器件，包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 在发光结构上的第一光子晶体结构; 第一光子晶体结构上的较低密封剂; 以及在下封装材料上的第二光子晶体结构。

公开(公告)号：US20100237372A1

公开(公告)日：2010-09-23

申请号：US12693263

申请日：2010-01-25

Applicant: Sun Kyung KIM ,  Hyun Don Song ,  Jin Wook Lee

Inventor： Sun Kyung KIM ,  Hyun Don Song ,  Jin Wook Lee

IPC: H01L33/00

CPC classification number: H01L33/20

Abstract: A light emitting device including a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first photonic crystal structure on the light emitting structure; a lower encapsulant on the first photonic crystal structure; and a second photonic crystal structure on the lower encapsulant.

Abstract translation: 一种发光器件，包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 在发光结构上的第一光子晶体结构; 第一光子晶体结构上的较低密封剂; 以及在下封装材料上的第二光子晶体结构。

公开(公告)号：US20110068355A1

公开(公告)日：2011-03-24

申请号：US12793781

申请日：2010-06-04

Applicant: Sun Kyung Kim ,  Jin Wook Lee

Inventor： Sun Kyung Kim ,  Jin Wook Lee

IPC: H01L33/02 ,  H01L33/30 ,  H01L33/42

CPC classification number: H01L33/38 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A light emitting device and a light emitting device package including the same are provided. The light emitting device may include a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode on the light emitting structure, the first electrode including a pattern, and a pad electrode on the first electrode.

Abstract translation: 提供一种发光器件和包括该发光器件的发光器件封装。 发光器件可以包括发光结构，其包括第一导电类型半导体层，有源层和第二导电类型半导体层，发光结构上的第一电极，包括图案的第一电极和焊盘电极 在第一个电极上。

公开(公告)号：US20100127295A1

公开(公告)日：2010-05-27

申请号：US12622271

申请日：2009-11-19

Applicant: Sun Kyung Kim ,  Jin Wook Lee ,  Hyun Kyong Cho

Inventor： Sun Kyung Kim ,  Jin Wook Lee ,  Hyun Kyong Cho

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/22 ,  H01L2933/0083

Abstract: Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater than λ/n, and the second period being identical to or smaller than λ/n, where n is a refractive index of the first conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer.

Abstract translation: 提供一种发光器件及其制造方法。 发光器件包括有源层; 在所述有源层上的第一导电半导体层; 在所述有源层上的第二导电半导体层，使得所述有源层设置在所述第一和第二导电半导体层之间; 以及光子晶体结构，其包括具有第一周期的所述第一导电半导体层上的第一光提取图案，以及在所述第一导电半导体层上具有第二周期的第二光提取图案，所述第一周期大于λ/ n， 第二周期等于或小于λ/ n，其中n是第一导电半导体层的折射率，λ是从有源层发射的光的波长。

公开(公告)号：US08823029B2

公开(公告)日：2014-09-02

申请号：US13240927

申请日：2011-09-22

Applicant: Sun Kyung Kim ,  Jin Wook Lee ,  Hyun Kyong Cho

Inventor： Sun Kyung Kim ,  Jin Wook Lee ,  Hyun Kyong Cho

IPC: H01L33/22 ,  H01L33/20

CPC classification number: H01L33/20 ,  H01L33/22 ,  H01L2933/0083

Abstract: Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater than λ/n, and the second period being identical to or smaller than λ/n, where n is a refractive index of the first conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer.

Abstract translation: 提供一种发光器件及其制造方法。 发光器件包括有源层; 在所述有源层上的第一导电半导体层; 在所述有源层上的第二导电半导体层，使得所述有源层设置在所述第一和第二导电半导体层之间; 以及光子晶体结构，其包括具有第一周期的所述第一导电半导体层上的第一光提取图案，以及在所述第一导电半导体层上具有第二周期的第二光提取图案，所述第一周期大于λ/ n， 第二周期等于或小于λ/ n，其中n是第一导电半导体层的折射率，λ是从有源层发射的光的波长。

公开(公告)号：US20120012859A1

公开(公告)日：2012-01-19

申请号：US13240927

申请日：2011-09-22

Applicant: Sun Kyung KIM ,  Jin Wook Lee ,  Hyun Kyong Cho

Inventor： Sun Kyung KIM ,  Jin Wook Lee ,  Hyun Kyong Cho

IPC: H01L33/20 ,  H01L33/32

CPC classification number: H01L33/20 ,  H01L33/22 ,  H01L2933/0083

Abstract: Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater than λ/n, and the second period being identical to or smaller than λ/n, where n is a refractive index of the first conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer.

Abstract translation: 提供一种发光器件及其制造方法。 发光器件包括有源层; 在所述有源层上的第一导电半导体层; 在所述有源层上的第二导电半导体层，使得所述有源层设置在所述第一和第二导电半导体层之间; 以及光子晶体结构，其包括具有第一周期的所述第一导电半导体层上的第一光提取图案，以及在所述第一导电半导体层上具有第二周期的第二光提取图案，所述第一周期大于λ/ n， 第二周期等于或小于λ/ n，其中n是第一导电半导体层的折射率，λ是从有源层发射的光的波长。

公开(公告)号：US08049239B2

公开(公告)日：2011-11-01

申请号：US12622271

申请日：2009-11-19

Applicant: Sun Kyung Kim ,  Jin Wook Lee ,  Hyun Kyong Cho

Inventor： Sun Kyung Kim ,  Jin Wook Lee ,  Hyun Kyong Cho

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/22 ,  H01L2933/0083

Abstract: Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater than λ/n, and the second period being identical to or smaller than λ/n, where n is a refractive index of the first conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer.

Abstract translation: 提供一种发光器件及其制造方法。 发光器件包括有源层; 在所述有源层上的第一导电半导体层; 在所述有源层上的第二导电半导体层，使得所述有源层设置在所述第一和第二导电半导体层之间; 以及光子晶体结构，其包括具有第一周期的所述第一导电半导体层上的第一光提取图案，以及在所述第一导电半导体层上具有第二周期的第二光提取图案，所述第一周期大于λ/ n， 第二周期等于或小于λ/ n，其中n是第一导电半导体层的折射率，λ是从有源层发射的光的波长。

公开(公告)号：US09130123B2

公开(公告)日：2015-09-08

申请号：US12793781

申请日：2010-06-04

Applicant: Sun Kyung Kim ,  Jin Wook Lee

Inventor： Sun Kyung Kim ,  Jin Wook Lee

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/42

CPC classification number: H01L33/38 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A light emitting device and a light emitting device package including the same are provided. The light emitting device may include a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode on the light emitting structure, the first electrode including a pattern, and a pad electrode on the first electrode.

Abstract translation: 提供一种发光器件和包括该发光器件的发光器件封装。 发光器件可以包括发光结构，其包括第一导电类型半导体层，有源层和第二导电类型半导体层，发光结构上的第一电极，包括图案的第一电极和焊盘电极 在第一个电极上。

公开(公告)号：US08569084B2

公开(公告)日：2013-10-29

申请号：US13341707

申请日：2011-12-30

Applicant: Jin Wook Lee ,  Sun Kyung Kim

Inventor： Jin Wook Lee ,  Sun Kyung Kim

IPC: H01L21/00

CPC classification number: H01L33/20 ,  H01L2933/0083

Abstract: A method for fabricating a light emitting device is provided. The method comprises forming a light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer and forming a mixed-period photonic crystal structure on the light emitting structure. And the forming of the mixed-period photonic crystal structure includes defining a first photonic crystal structure through a lithography process and a dry etching process, and forming a second photonic crystal structure through a wet etching process.

Abstract translation: 提供一种制造发光器件的方法。 该方法包括形成包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构，并在发光结构上形成混合周期光子晶体结构。 并且混合周期光子晶体结构的形成包括通过光刻工艺和干蚀刻工艺限定第一光子晶体结构，以及通过湿蚀刻工艺形成第二光子晶体结构。

公开(公告)号：US08716117B2

公开(公告)日：2014-05-06

申请号：US13106977

申请日：2011-05-13

Applicant: Myeongcheol Kim ,  Sooyeon Jeong ,  Joon Goo Hong ,  Dohyoung Kim ,  Yongjin Kim ,  Jin Wook Lee ,  Yoonhae Kim

Inventor： Myeongcheol Kim ,  Sooyeon Jeong ,  Joon Goo Hong ,  Dohyoung Kim ,  Yongjin Kim ,  Jin Wook Lee ,  Yoonhae Kim

IPC: H01L21/28

CPC classification number: H01L29/4966 ,  H01L21/76804 ,  H01L21/76831 ,  H01L21/76895 ,  H01L21/76897 ,  H01L29/4958 ,  H01L29/4975 ,  H01L29/66545

Abstract: A semiconductor device and a method of forming the semiconductor device includes: forming gate electrodes on a semiconductor substrate and forming spacers on both side surfaces of the gate electrodes; forming capping patterns on the gate electrodes; and forming a metal contact between the gate electrodes. Each of the capping patterns is formed to have a width greater than a width of each of the gate electrodes.

Abstract translation: 半导体器件和形成半导体器件的方法包括：在半导体衬底上形成栅电极并在栅电极的两个侧表面上形成间隔物; 在栅电极上形成封盖图案; 以及在栅电极之间形成金属接触。 每个封盖图案形成为具有大于每个栅电极的宽度的宽度。