公开(公告)号：US08049239B2

公开(公告)日：2011-11-01

申请号：US12622271

申请日：2009-11-19

申请人： Sun Kyung Kim ,  Jin Wook Lee ,  Hyun Kyong Cho

发明人： Sun Kyung Kim ,  Jin Wook Lee ,  Hyun Kyong Cho

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L2933/0083

摘要： Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater than λ/n, and the second period being identical to or smaller than λ/n, where n is a refractive index of the first conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer.

摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括有源层; 在所述有源层上的第一导电半导体层; 在所述有源层上的第二导电半导体层，使得所述有源层设置在所述第一和第二导电半导体层之间; 以及光子晶体结构，其包括具有第一周期的所述第一导电半导体层上的第一光提取图案，以及在所述第一导电半导体层上具有第二周期的第二光提取图案，所述第一周期大于λ/ n， 第二周期等于或小于λ/ n，其中n是第一导电半导体层的折射率，λ是从有源层发射的光的波长。

公开(公告)号：US20100224854A1

公开(公告)日：2010-09-09

申请号：US12569435

申请日：2009-09-29

申请人： Jin Wook LEE ,  Sun Kyung Kim

发明人： Jin Wook LEE ,  Sun Kyung Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L2933/0083

摘要： A light emitting device (LED) is provided. The LED comprises a light emitting structure and a mixed-period photonic crystal structure. The light emitting structure comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The mixed-period photonic crystal structure is on the light emitting structure.

摘要翻译： 提供发光器件（LED）。 LED包括发光结构和混合周期光子晶体结构。 发光结构包括第一导电类型半导体层，有源层和第二导电类型半导体层。 混合周期光子晶体结构在发光结构上。

公开(公告)号：US09130123B2

公开(公告)日：2015-09-08

申请号：US12793781

申请日：2010-06-04

申请人： Sun Kyung Kim ,  Jin Wook Lee

发明人： Sun Kyung Kim ,  Jin Wook Lee

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/42

CPC分类号： H01L33/38 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A light emitting device and a light emitting device package including the same are provided. The light emitting device may include a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode on the light emitting structure, the first electrode including a pattern, and a pad electrode on the first electrode.

摘要翻译： 提供一种发光器件和包括该发光器件的发光器件封装。 发光器件可以包括发光结构，其包括第一导电类型半导体层，有源层和第二导电类型半导体层，发光结构上的第一电极，包括图案的第一电极和焊盘电极 在第一个电极上。

公开(公告)号：US08569084B2

公开(公告)日：2013-10-29

申请号：US13341707

申请日：2011-12-30

申请人： Jin Wook Lee ,  Sun Kyung Kim

发明人： Jin Wook Lee ,  Sun Kyung Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L2933/0083

摘要： A method for fabricating a light emitting device is provided. The method comprises forming a light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer and forming a mixed-period photonic crystal structure on the light emitting structure. And the forming of the mixed-period photonic crystal structure includes defining a first photonic crystal structure through a lithography process and a dry etching process, and forming a second photonic crystal structure through a wet etching process.

摘要翻译： 提供一种制造发光器件的方法。 该方法包括形成包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构，并在发光结构上形成混合周期光子晶体结构。 并且混合周期光子晶体结构的形成包括通过光刻工艺和干蚀刻工艺限定第一光子晶体结构，以及通过湿蚀刻工艺形成第二光子晶体结构。

公开(公告)号：US20100127295A1

公开(公告)日：2010-05-27

申请号：US12622271

申请日：2009-11-19

申请人： Sun Kyung Kim ,  Jin Wook Lee ,  Hyun Kyong Cho

发明人： Sun Kyung Kim ,  Jin Wook Lee ,  Hyun Kyong Cho

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L2933/0083

摘要： Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater than λ/n, and the second period being identical to or smaller than λ/n, where n is a refractive index of the first conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer.

摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括有源层; 在所述有源层上的第一导电半导体层; 在所述有源层上的第二导电半导体层，使得所述有源层设置在所述第一和第二导电半导体层之间; 以及光子晶体结构，其包括具有第一周期的所述第一导电半导体层上的第一光提取图案，以及在所述第一导电半导体层上具有第二周期的第二光提取图案，所述第一周期大于λ/ n， 第二周期等于或小于λ/ n，其中n是第一导电半导体层的折射率，λ是从有源层发射的光的波长。

公开(公告)号：US20110068355A1

公开(公告)日：2011-03-24

申请号：US12793781

申请日：2010-06-04

申请人： Sun Kyung Kim ,  Jin Wook Lee

发明人： Sun Kyung Kim ,  Jin Wook Lee

IPC分类号： H01L33/02 ,  H01L33/30 ,  H01L33/42

CPC分类号： H01L33/38 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A light emitting device and a light emitting device package including the same are provided. The light emitting device may include a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode on the light emitting structure, the first electrode including a pattern, and a pad electrode on the first electrode.

摘要翻译： 提供一种发光器件和包括该发光器件的发光器件封装。 发光器件可以包括发光结构，其包括第一导电类型半导体层，有源层和第二导电类型半导体层，发光结构上的第一电极，包括图案的第一电极和焊盘电极 在第一个电极上。

公开(公告)号：US08823029B2

公开(公告)日：2014-09-02

申请号：US13240927

申请日：2011-09-22

申请人： Sun Kyung Kim ,  Jin Wook Lee ,  Hyun Kyong Cho

发明人： Sun Kyung Kim ,  Jin Wook Lee ,  Hyun Kyong Cho

IPC分类号： H01L33/22 ,  H01L33/20

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L2933/0083

摘要： Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater than λ/n, and the second period being identical to or smaller than λ/n, where n is a refractive index of the first conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer.

摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括有源层; 在所述有源层上的第一导电半导体层; 在所述有源层上的第二导电半导体层，使得所述有源层设置在所述第一和第二导电半导体层之间; 以及光子晶体结构，其包括具有第一周期的所述第一导电半导体层上的第一光提取图案，以及在所述第一导电半导体层上具有第二周期的第二光提取图案，所述第一周期大于λ/ n， 第二周期等于或小于λ/ n，其中n是第一导电半导体层的折射率，λ是从有源层发射的光的波长。

公开(公告)号：US08618563B2

公开(公告)日：2013-12-31

申请号：US12693263

申请日：2010-01-25

申请人： Sun Kyung Kim ,  Hyun Don Song ,  Jin Wook Lee

发明人： Sun Kyung Kim ,  Hyun Don Song ,  Jin Wook Lee

IPC分类号： H01L27/15

CPC分类号： H01L33/20

摘要： A light emitting device including a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first photonic crystal structure on the light emitting structure; a lower encapsulant on the first photonic crystal structure; and a second photonic crystal structure on the lower encapsulant.

摘要翻译： 一种发光器件，包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 在发光结构上的第一光子晶体结构; 第一光子晶体结构上的较低密封剂; 以及在下封装材料上的第二光子晶体结构。

公开(公告)号：US09647173B2

公开(公告)日：2017-05-09

申请号：US13467882

申请日：2012-05-09

申请人： Sun Kyung Kim ,  Hyun Kyong Cho

发明人： Sun Kyung Kim ,  Hyun Kyong Cho

IPC分类号： H01L33/32 ,  H01L33/60 ,  H01L33/10 ,  H01L33/20 ,  H01L33/46

CPC分类号： H01L33/10 ,  H01L33/20 ,  H01L33/46 ,  H01L2933/0083

摘要： A light-emitting device comprises a first conductive type semiconductor layer; a second conductive type semiconductor layer under the first conductive type semiconductor layer; an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a nonconductive semiconductor layer on the first conductive type semiconductor layer and including a light extraction structure formed in the nonconductive semiconductor layer; a recess disposed from the nonconductive semiconductor layer to an upper portion of the first conductive type semiconductor layer; a first electrode layer on the upper portion of the first conductive type semiconductor layer; a second electrode layer under the second conductive type semiconductor layer.

公开(公告)号：US09276169B2

公开(公告)日：2016-03-01

申请号：US12908413

申请日：2010-10-20

申请人： Sun Kyung Kim

发明人： Sun Kyung Kim

IPC分类号： H01L33/20 ,  H01L33/38 ,  H01L33/14 ,  H01L33/22

CPC分类号： H01L33/20 ,  H01L33/145 ,  H01L33/22 ,  H01L33/382 ,  H01L2224/48091 ,  H01L2933/0083 ,  H01L2924/00014

摘要： Provided are a light emitting device, a light emitting device package, and a lighting system including the same. The light emitting device includes a second electrode layerelectrode, a light emitting structure, a texture, and a current spreading layer. The light emitting structure is on second electrode layerelectrode, and includes a second conductive type semiconductor layer, an active layer on the second conductive type semiconductor layer, and a first conductive type semiconductor layer on the active layer. The texture is on at least one portion of the light emitting structure. The current spreading layer is on the light emitting structure provided with the texture.

摘要翻译： 提供了一种发光器件，发光器件封装以及包括该发光器件的照明系统。 发光器件包括第二电极层间电极，发光结构，纹理和电流扩展层。 发光结构在第二电极层间电极上，并且包括第二导电类型半导体层，第二导电类型半导体层上的有源层和有源层上的第一导电类型半导体层。 纹理位于发光结构的至少一部分上。 电流扩散层位于具有纹理的发光结构上。