Optically pumped, praseodymium based solid state laser
    2.
    发明授权
    Optically pumped, praseodymium based solid state laser 失效
    光学泵浦,基于镨的固态激光器

    公开(公告)号:US5535232A

    公开(公告)日:1996-07-09

    申请号:US381243

    申请日:1995-01-31

    摘要: The present invention is a solid state laser, including: (1) a laser cavity defined by a first mirror and an opposing second mirror, where these mirrors are reflective at the output wavelength of the laser; (2) a laser medium disposed in the laser cavity, including a low phonon energy host material, doped with an amount of praseodymium ions sufficient to produce a longitudinal mode laser emission from the transition of the praseodymium ions from the .sup.3 F.sub.3 excited state to a lower energy state when the laser medium is pumped by an appropriate pump, where the energy gap between the .sup.3 F.sub.3 excited state and the lower energy state corresponds to the output wavelength of the laser; and (3) a pump for the laser medium.

    摘要翻译: 本发明是一种固态激光器,包括:(1)由第一反射镜和相对的第二反射镜限定的激光腔,其中这些反射镜在激光的输出波长处是反射的; (2)设置在激光腔中的激光介质,包括低声子能量主体材料,其掺杂有足够的镨离子量,以产生从镨离子从3F 3激发态转变为较低的纵模激光发射 当激光介质被适当的泵泵浦时,其中3F3激发态和较低能态之间的能隙对应于激光器的输出波长; 和(3)用于激光介质的泵。

    Holmium quasi-two level laser
    3.
    发明授权
    Holmium quasi-two level laser 失效
    钬准二级激光

    公开(公告)号:US5287378A

    公开(公告)日:1994-02-15

    申请号:US998347

    申请日:1992-12-30

    IPC分类号: H01S3/094 H01S3/16 H01S3/14

    摘要: The directly pumped holmium (Ho) quasi-two level laser of the invention comprises a directly pumped holmium laser having a host material doped with an amount of holmium ions sufficient to produce an output laser emission at a wavelength of about 2.1 .mu.m when the holmium laser is pumped by a pump beam at a wavelength of about 2 .mu.m and a pumping laser for producing the pump beam. In an exemplary embodiment, the pumping laser comprises a Cr,Tm:YAG laser pumped by a flashlamp.

    摘要翻译: 本发明的直接泵浦钬(Ho)准二级激光器包括直接泵浦的钬激光器,其具有掺杂有足够量的钬离子量的主体材料,以产生波长为约2.1(my)m的输出激光发射, 钬激光器通过泵浦光束以约2(μm)的波长泵浦,并且用于产生泵浦光束的泵浦激光器。 在示例性实施例中,泵浦激光器包括由闪光灯泵浦的Cr,Tm:YAG激光器。

    NOVEL METHOD FOR THE BOTTOM-SEEDED GROWTH OF POTASSIUM LEAD CHLORIDE CRYSTALS FROM POLYCRYSTALLINE SEEDS
    5.
    发明申请
    NOVEL METHOD FOR THE BOTTOM-SEEDED GROWTH OF POTASSIUM LEAD CHLORIDE CRYSTALS FROM POLYCRYSTALLINE SEEDS 有权
    来自多晶种子的磷酸铅晶体的底部生长的新方法

    公开(公告)号:US20110168080A1

    公开(公告)日:2011-07-14

    申请号:US13049962

    申请日:2011-03-17

    IPC分类号: C30B11/02

    摘要: A method and apparatus for growing a single crystal Kb2Cl5 material in a growth furnace comprising an upper zone set at 480° C. A single crystal Kb2Cl5 material is grown from a single Kb2Cl5 grain until a eutectic point is reached. The upper zone is cooled at 1°/hour to 380° C. The single crystal Kb2Cl5 material is annealed. The single crystal Kb2Cl5 material is cooled at 10°/hour to room temperature. Optionally, the method further includes loading an ampoule with Kb2Cl5 powder, the ampoule including a plug, which includes a seeding well and an aperture. The Kb2Cl5 powder is melted, thereby generating a melt. The melt is frozen to capture a polycrystalline Kb2Cl5 material in the seeding well, thereby generating a polycrystalline Kb2Cl5 seed. The ampoule is loaded into the growth furnace. The polycrystalline Kb2Cl5 material is melted except for the polycrystalline Kb2Cl5 seed, the polycrystalline Kb2Cl5 seed including the single Kb2Cl5 grain. The polycrystalline Kb2Cl5 material is grown until the single Kb2Cl5 grain is isolated by the aperture.

    摘要翻译: 在生长炉中生长单晶Kb2Cl5材料的方法和装置,其包括设置在480℃的上部区域。单晶Kb2Cl5材料从单个Kb2Cl5晶粒生长直到达到共晶点。 上部区域以1℃/小时冷却至380℃。对单晶Kb2Cl5材料进行退火。 将单晶Kb2Cl5材料以10℃/小时冷却至室温。 任选地,所述方法还包括用Kb2Cl5粉末加载安瓿,所述安瓿包括插塞,其包括接种孔和孔。 Kb2Cl5粉末熔化,从而产生熔体。 将熔体冷冻以在接种井中捕获多晶Kb2Cl5材料,从而产生多晶Kb2Cl5种子。 将安瓿装载到生长炉中。 除了多晶Kb2Cl5种子,多晶Kb2Cl5材料被熔化,多晶Kb2Cl5种子包括单个Kb2Cl5晶粒。 生长多晶Kb2Cl5材料,直到单个Kb2Cl5颗粒被孔径隔离。

    Method for the bottom-seeded growth of potassium lead chloride crystals from polycrystalline seeds
    7.
    发明授权
    Method for the bottom-seeded growth of potassium lead chloride crystals from polycrystalline seeds 有权
    来自多晶种子的氯化铅晶体底部种子生长的方法

    公开(公告)号:US09068276B2

    公开(公告)日:2015-06-30

    申请号:US13049962

    申请日:2011-03-17

    摘要: A method of growing a single crystal material using a device that includes a conical plug. The conical plug includes a first portion defining a first conical hole about an axis, the first conical hole having a first angle, and includes a second portion contiguous with the first portion and defining a second conical hole about the axis, the second conical hole having a second angle having the same sign as the first angle and being greater than the first angle. The device includes an upper tube comprising the conical plug fused therein and a seeding well plug. The device includes a lower tube including the seeding well plug fused therein. A single crystal KPb2Cl5 material is grown from the oriented single crystal KPb2Cl5 seed through the first conical hole and then the second conical hole and then with continuing growth in the upper tube.

    摘要翻译: 使用包括锥形塞的装置生长单晶材料的方法。 锥形塞包括第一部分,其围绕轴线限定第一锥形孔,第一锥形孔具有第一角度,并且包括与第一部分相邻并且围绕轴线限定第二锥形孔的第二部分,第二锥形孔具有 具有与第一角度相同的符号并且大于第一角度的第二角度。 该装置包括一个上管,该上管包括熔融在其中的锥形插塞和一个播种井塞。 该装置包括下管,其包括在其中熔融的接种井塞。 单晶KPb2Cl5材料从取向的单晶KPb2Cl5种子通过第一锥形孔然后第二锥形孔然后在上管继续生长生长。

    Multiple quantum well electrically/optically addressed spatial light
modulator
    8.
    发明授权
    Multiple quantum well electrically/optically addressed spatial light modulator 失效
    多量子阱电/光寻址空间光调制器

    公开(公告)号:US5844709A

    公开(公告)日:1998-12-01

    申请号:US940738

    申请日:1997-09-30

    IPC分类号: G02F1/017 G02F1/03 G06K9/76

    摘要: A multiple quantum well spatial light modulator combines both optically addressed and electrically addressed portions on a single wafer. The electrically and optically addressed portions may be physically distinct or combined. To fabricate the modulator, a portion of an optically addressed multiple quantum well spatial light modulator is configured as an electrically addressed portion by pixellating that portion of the multiple quantum well wafer. The frequency of the applied voltage to the electrically addressed portion is increased such that the voltage switches faster than both the dark and illuminated screening time. The electrically and optically addressed portions may be combined or positioned side-by-side. The spatial light modulator has applications in a wide variety of low-cost, high performance pattern recognition systems. In one system, a first infrared beam impinges the electrically addressed portion of the modulator and picks up the pattern electrically written thereon (i.e., the template image). A second infrared beam impinges the optically addressed portion of the modulator and picks up the pattern written thereon by a white light writing beam (i.e., sample image). The first and second infrared beams then pass through a lens, where the beams are Fourier transformed in the plane of an optically addressed spatial light modulator (OASLM). The correlation hologram formed on the OASLM is read out by a third infrared beam and detected using a photodiode array. In a second system, the lens and OASLM are replaced with a parabolic reflector which reflects the first and second infrared beams onto the optically addressed portion of the modulator.

    摘要翻译: 多量子阱空间光调制器将光寻址和电寻址部分组合在单个晶片上。 电和光学寻址的部分可以在物理上不同或组合。 为了制造调制器,光学寻址的多量子阱空间光调制器的一部分通过对该多量子阱晶片的该部分进行像素化而被配置为电寻址部分。 施加到电寻址部分的电压的频率增加,使得电压比黑暗和照明屏蔽时间都快。 电和光寻址部分可以并排组合或定位。 空间光调制器可应用于各种低成本,高性能的模式识别系统。 在一个系统中,第一红外光束照射调制器的电寻址部分,并拾取电图写在其上的图案(即模板图像)。 第二个红外光束照射调制器的光学寻址部分,并通过白光写入光束(即,样本图像)拾取写在其上的图案。 然后,第一和第二红外光束通过透镜,其中光束在光学寻址的空间光调制器(OASLM)的平面中被傅立叶变换。 在OASLM上形成的相关全息图由第三红外光束读出,并使用光电二极管阵列进行检测。 在第二系统中,透镜和OASLM被抛物面反射器代替,抛物面反射器将第一和第二红外光束反射到调制器的光学寻址部分上。