公开(公告)号：US20240322037A1

公开(公告)日：2024-09-26

申请号：US18651184

申请日：2024-04-30

申请人： Sony Group Corporation

发明人： Joseph M. Steigerwald ,  Tahir Ghani ,  Jenny Hu ,  Ian R.C. Post

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L29/7831 ,  H01L21/28114 ,  H01L21/823431 ,  H01L21/82345 ,  H01L21/823456 ,  H01L27/0886 ,  H01L29/42372 ,  H01L29/4908 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66484 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/7855 ,  H01L29/7856 ,  H01L29/78645 ,  H01L29/42376

摘要： Embodiments of the present disclosure describe multi-threshold voltage devices and associated techniques and configurations. In one embodiment, an apparatus includes a semiconductor substrate, a channel body disposed on the semiconductor substrate, a first gate electrode having a first thickness coupled with the channel body and a second gate electrode having a second thickness coupled with the channel body, wherein the first thickness is greater than the second thickness. Other embodiments may be described and/or claimed.

公开(公告)号：US12021141B2

公开(公告)日：2024-06-25

申请号：US17851737

申请日：2022-06-28

申请人： Sony Group Corporation

发明人： Joseph M. Steigerwald ,  Tahir Ghani ,  Jenny Hu ,  Ian R. C. Post

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L29/7831 ,  H01L21/28114 ,  H01L21/823431 ,  H01L21/82345 ,  H01L21/823456 ,  H01L27/0886 ,  H01L29/42372 ,  H01L29/4908 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66484 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/7855 ,  H01L29/7856 ,  H01L29/78645 ,  H01L29/42376

摘要： Embodiments of the present disclosure describe multi-threshold voltage devices and associated techniques and configurations. In one embodiment, an apparatus includes a semiconductor substrate, a channel body disposed on the semiconductor substrate, a first gate electrode having a first thickness coupled with the channel body and a second gate electrode having a second thickness coupled with the channel body, wherein the first thickness is greater than the second thickness. Other embodiments may be described and/or claimed.

公开(公告)号：US20220328689A1

公开(公告)日：2022-10-13

申请号：US17851737

申请日：2022-06-28

申请人： Sony Group Corporation

发明人： Joseph M. Steigerwald ,  Tahir Ghani ,  Jenny Hu ,  Ian R.C. Post

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L21/28 ,  H01L29/49 ,  H01L29/786 ,  H01L29/51 ,  H01L21/8234 ,  H01L27/088

摘要： Embodiments of the present disclosure describe multi-threshold voltage devices and associated techniques and configurations. In one embodiment, an apparatus includes a semiconductor substrate, a channel body disposed on the semiconductor substrate, a first gate electrode having a first thickness coupled with the channel body and a second gate electrode having a second thickness coupled with the channel body, wherein the first thickness is greater than the second thickness. Other embodiments may be described and/or claimed.

公开(公告)号：US11437511B2

公开(公告)日：2022-09-06

申请号：US16735472

申请日：2020-01-06

申请人： Sony Group Corporation

发明人： Joseph M. Steigerwald ,  Tahir Ghani ,  Jenny Hu ,  Ian R. C. Post

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L29/51 ,  H01L27/088 ,  H01L21/28 ,  H01L21/8234

摘要： Embodiments of the present disclosure describe multi-threshold voltage devices and associated techniques and configurations. In one embodiment, an apparatus includes a semiconductor substrate, a channel body disposed on the semiconductor substrate, a first gate electrode having a first thickness coupled with the channel body and a second gate electrode having a second thickness coupled with the channel body, wherein the first thickness is greater than the second thickness. Other embodiments may be described and/or claimed.