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公开(公告)号：US20190342512A1
公开(公告)日：2019-11-07
申请号：US16511876
申请日：2019-07-15
Applicant: SONY CORPORATION
Inventor： Takashi Abe , Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.
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公开(公告)号：US10263033B2
公开(公告)日：2019-04-16
申请号：US15858204
申请日：2017-12-29
Applicant: Sony Corporation
Inventor： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC: H01L27/146 , H01L23/544 , H01L31/0216 , H01L31/0232
Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
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公开(公告)号：US09832405B2
公开(公告)日：2017-11-28
申请号：US15160575
申请日：2016-05-20
Applicant: SONY CORPORATION
Inventor： Takashi Abe , Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
CPC classification number: H04N5/374 , H04N3/155 , H04N5/335 , H04N5/3741 , H04N5/37457 , H04N5/3765 , H04N5/378 , H04N9/045
Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.
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公开(公告)号：US20160197117A1
公开(公告)日：2016-07-07
申请号：US15067298
申请日：2016-03-11
Applicant: Sony Corporation
Inventor： Masashi Nakata , Eiichi Funatsu
IPC: H01L27/146 , H01L27/148
CPC classification number: H04N5/35563 , H01L27/14607 , H01L27/1461 , H01L27/14612 , H01L27/14636 , H01L27/14645 , H01L27/14812 , H04N5/35554 , H04N5/37455 , H04N5/37457 , H04N5/378 , H04N9/045
Abstract: A solid-state image sensing device includes: a pixel part in which pixels are arranged in a matrix; and a pixel signal readout part including an AD conversion part that analog-digital (AD)-converts a pixel signal read out from the pixel part. Each of the adjacent pixels or one of the pixels of the pixel part is formed as divided pixels divided into regions with different photosensitivity or amounts of accumulated charge, photosensitivity or exposure time conditions are set for the divided pixels and the photosensitivity or exposure time conditions of the divided pixels provided to be opposed in diagonal directions are set to the same conditions, the pixel signal readout part reads out divided pixel signals of the respective divided pixels of the pixel, and the AD conversion part obtains a pixel signal of one pixel by AD-converting the respective read out divided pixel signals and adding the signals.
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5.发明授权公开(公告)号：US09319606B2
公开(公告)日：2016-04-19
申请号：US14529573
申请日：2014-10-31
Applicant: Sony Corporation
Inventor： Masashi Nakata , Eiichi Funatsu
IPC: H04N5/378 , H04N5/355 , H04N5/3745 , H04N9/04 , H04N5/374
CPC classification number: H01L27/14645 , H01L27/14607 , H01L27/1461 , H01L27/14612 , H01L27/14636 , H01L27/14812 , H04N5/35554 , H04N5/35563 , H04N5/37455 , H04N5/37457 , H04N5/378 , H04N9/045
Abstract: A solid-state image sensing device includes: a pixel part in which pixels are arranged in a matrix; and a pixel signal readout part including an AD conversion part that analog-digital (AD)-converts a pixel signal read out from the pixel part. Each of the adjacent pixels or one of the pixels of the pixel part is formed as divided pixels divided into regions with different photosensitivity or amounts of accumulated charge, photosensitivity or exposure time conditions are set for the divided pixels and the photosensitivity or exposure time conditions of the divided pixels provided to be opposed in diagonal directions are set to the same conditions, the pixel signal readout part reads out divided pixel signals of the respective divided pixels of the pixel, and the AD conversion part obtains a pixel signal of one pixel by AD-converting the respective read out divided pixel signals and adding the signals.
Abstract translation: 固态图像感测装置包括：像素部，其中像素以矩阵形式排列; 以及像素信号读出部，包括模拟数字（AD）转换从像素部读出的像素信号的AD转换部。 每个相邻像素或像素部分的像素中的一个被形成为划分为具有不同光敏度或累积电荷量的区域的分割像素，对于分割像素设置光敏性或曝光时间条件，并且对于分辨像素的光敏度或曝光时间条件 被设置为在对角线方向上相对的分割像素被设置为相同的条件，像素信号读出部分读出像素的各个划分像素的分割像素信号，并且AD转换部分通过AD获得一个像素的像素信号 - 转换各个读出的分割像素信号并相加信号。
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Patent Agency Ranking
公开(公告)号：US20160014304A1
公开(公告)日：2016-01-14
申请号：US14864169
申请日：2015-09-24
Applicant: Sony Corporation
Inventor： Takashi Abe , Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
CPC classification number: H04N5/374 , H04N3/155 , H04N5/335 , H04N5/3741 , H04N5/37457 , H04N5/3765 , H04N5/378 , H04N9/045
Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell (30) includes two pixels (31) and (32). Upper and lower photoelectric converters (33) and (34), transfer transistors (35) and (36) connected to the upper and lower photoelectric converters, respectively, a reset transistor (37), and an amplifying transistor (38) form the two pixels (31) and (32). A full-face signal line 39 is connected to the respective drains of the reset transistor (37) and the amplifying transistor (38). Controlling the full-face signal line (39), along with transfer signal lines (42) and (43) and a reset signal line (41), to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.
Abstract translation: 固态成像装置能够简化像素结构以减小像素大小，并且能够抑制当提供多个输出系统时像素之间的特性的变化。 单位单元（30）包括两个像素（31）和（32）。 上，下光电转换器（33）和（34）分别连接到上，下光电转换器的转移晶体管（35）和（36），复位晶体管（37）和放大晶体管（38） 像素（31）和（32）。 全面信号线39连接到复位晶体管（37）和放大晶体管（38）的各个漏极。 控制全面信号线（39）以及传输信号线（42）和（43）和复位信号线（41），以读出信号实现了像素中布线的简化，减少了 像素大小等。
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公开(公告)号：US09860471B2
公开(公告)日：2018-01-02
申请号：US14925333
申请日：2015-10-28
Applicant: Sony Corporation
Inventor： Keiji Mabuchi , Eiichi Funatsu , Kasai Masanori
CPC classification number: H04N5/378 , H04N5/2253 , H04N5/3559 , H04N5/365 , H04N5/3698 , H04N5/37213 , H04N5/374 , H04N5/376 , H04N5/3765
Abstract: A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.
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公开(公告)号：US20160269665A1
公开(公告)日：2016-09-15
申请号：US15160575
申请日：2016-05-20
Applicant: SONY CORPORATION
Inventor： Takashi Abe , Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC: H04N5/374 , H04N9/04 , H04N5/3745 , H04N5/378
CPC classification number: H04N5/374 , H04N3/155 , H04N5/335 , H04N5/3741 , H04N5/37457 , H04N5/3765 , H04N5/378 , H04N9/045
Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.
Abstract translation: 固态成像装置能够简化像素结构以减小像素大小，并且能够抑制当提供多个输出系统时像素之间的特性的变化。 单位单元包括两个像素。 上下光电转换器和传输晶体管分别连接到上和下光电转换器，复位晶体管和放大晶体管形成两个像素。 全面信号线连接到复位晶体管和放大晶体管的各个漏极。 控制全面信号线以及传输信号线和复位信号线，以读出信号实现了像素中布线的简化，像素尺寸的缩小等。
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公开(公告)号：US10778918B2
公开(公告)日：2020-09-15
申请号：US16511876
申请日：2019-07-15
Applicant: SONY CORPORATION
Inventor： Takashi Abe , Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.
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公开(公告)号：US20190174083A1
公开(公告)日：2019-06-06
申请号：US16201692
申请日：2018-11-27
Applicant: SONY CORPORATION
Inventor： Takashi Abe , Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.
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