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公开(公告)号：US20160269665A1
公开(公告)日：2016-09-15
申请号：US15160575
申请日：2016-05-20
Applicant: SONY CORPORATION
Inventor： Takashi Abe , Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC: H04N5/374 , H04N9/04 , H04N5/3745 , H04N5/378
CPC classification number: H04N5/374 , H04N3/155 , H04N5/335 , H04N5/3741 , H04N5/37457 , H04N5/3765 , H04N5/378 , H04N9/045
Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.
Abstract translation: 固态成像装置能够简化像素结构以减小像素大小，并且能够抑制当提供多个输出系统时像素之间的特性的变化。 单位单元包括两个像素。 上下光电转换器和传输晶体管分别连接到上和下光电转换器，复位晶体管和放大晶体管形成两个像素。 全面信号线连接到复位晶体管和放大晶体管的各个漏极。 控制全面信号线以及传输信号线和复位信号线，以读出信号实现了像素中布线的简化，像素尺寸的缩小等。
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公开(公告)号：US08896738B2
公开(公告)日：2014-11-25
申请号：US14054207
申请日：2013-10-15
Applicant: Sony Corporation
Inventor： Hiroki Sato , Keiji Mabuchi , Nobuo Nakamura , Tetsuya Iizuka
CPC classification number: H04N5/335
Abstract: The device includes an pixel array part having a plurality of unit pixels, a CDS (correlated double sampling) circuit, and an A/D converter. A pixel signal read from a pixel array part via a signal line is subjected to CDS processing (noise elimination processing) in the CDS circuit, and then this pixel signal is inputted into the A/D converter which performs A/D conversion on the pixel signal. The A/D converter includes a ΔΣ modulator and a digital filter to perform highly accurate A/D conversion. The invention can also be applied to a construction in which an A/D converter is provided at the front stage of the CDS circuit.
Abstract translation: 该装置包括具有多个单位像素的像素阵列部分，CDS（相关双采样）电路和A / D转换器。 经由信号线从像素阵列部分读取的像素信号在CDS电路中进行CDS处理（噪声消除处理），然后将该像素信号输入到对像素进行A / D转换的A / D转换器 信号。 A / D转换器包括＆Dgr＆amp; 调制器和数字滤波器，以执行高精度的A / D转换。 本发明也可以应用于在CDS电路的前级设置A / D转换器的结构。
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3.发明申请公开(公告)号：US20180122849A1
公开(公告)日：2018-05-03
申请号：US15858204
申请日：2017-12-29
Applicant: Sony Corporation
Inventor： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC: H01L27/146 , H01L31/0232 , H01L31/0216 , H01L23/544
CPC classification number: H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
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公开(公告)号：US09859324B2
公开(公告)日：2018-01-02
申请号：US15225303
申请日：2016-08-01
Applicant: Sony Corporation
Inventor： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC: H01L27/146 , H01L23/544 , H01L31/0216 , H01L31/0232
CPC classification number: H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an acitve region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
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公开(公告)号：US09648258B2
公开(公告)日：2017-05-09
申请号：US14250994
申请日：2014-04-11
Applicant: Sony Corporation
Inventor： Nobuo Nakamura , Shoji Kawahito , Hiroki Sato , Mizuho Higashi
IPC: H01L27/00 , H04N5/355 , H04N5/243 , H04N5/374 , H04N5/378 , H01L27/146 , H04N5/3745
CPC classification number: H04N5/378 , H01L27/14609 , H04N5/243 , H04N5/355 , H04N5/374 , H04N5/37455 , H04N5/37457
Abstract: An image sensor controls the gain of a pixel signal on a pixel-by-pixel basis and extends a dynamic range while maintaining a S/N ratio at a favorable level. A column unit in an image sensor is independently detects a level of each pixel signal and independently sets a gain for level of the signal. A photoelectric converting region unit has pixels arranged two-dimensionally with a vertical signal line for each pixel column to output each pixel signal. The column unit is on an output side of the vertical signal line. The column unit for each pixel column has a pixel signal level detecting circuit, a programmable gain control, a sample and hold (S/H) circuit. Gain correction is performed according to a result of a detected level of the pixel signal.
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Patent Agency Ranking
公开(公告)号：US09185369B2
公开(公告)日：2015-11-10
申请号：US13910859
申请日：2013-06-05
Applicant: SONY CORPORATION
Inventor： Takashi Abe , Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
CPC classification number: H04N5/374 , H04N3/155 , H04N5/335 , H04N5/3741 , H04N5/37457 , H04N5/3765 , H04N5/378 , H04N9/045
Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell (30) includes two pixels (31) and (32). Upper and lower photoelectric converters (33) and (34), transfer transistors (35) and (36) connected to the upper and lower photoelectric converters, respectively, a reset transistor (37), and an amplifying transistor (38) form the two pixels (31) and (32). A full-face signal line 39 is connected to the respective drains of the reset transistor (37) and the amplifying transistor (38). Controlling the full-face signal line (39), along with transfer signal lines (42) and (43) and a reset signal line (41), to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.
Abstract translation: 固态成像装置能够简化像素结构以减小像素大小，并且能够抑制当提供多个输出系统时像素之间的特性的变化。 单位单元（30）包括两个像素（31）和（32）。 上，下光电转换器（33）和（34）分别连接到上，下光电转换器的转移晶体管（35）和（36），复位晶体管（37）和放大晶体管（38） 像素（31）和（32）。 全面信号线39连接到复位晶体管（37）和放大晶体管（38）的各个漏极。 控制全面信号线（39）以及传输信号线（42）和（43）和复位信号线（41），以读出信号实现了像素中布线的简化，减少了 像素大小等等。
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7.发明授权公开(公告)号：US10165212B2
公开(公告)日：2018-12-25
申请号：US15679839
申请日：2017-08-17
Applicant: SONY CORPORATION
Inventor： Takashi Abe , Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.
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公开(公告)号：US09560325B2
公开(公告)日：2017-01-31
申请号：US14082953
申请日：2013-11-18
Applicant: Sony Corporation
Inventor： Junichi Kanai , Nobuo Nakamura
CPC classification number: H01L27/14645 , H01L21/266 , H01L27/14603 , H01L27/14605 , H01L27/1461 , H01L27/14621 , H01L27/14627 , H01L27/14689 , H04N5/3458 , H04N5/3532 , H04N5/3535 , H04N5/3537 , H04N5/35554 , H04N9/045 , H04N9/04511 , H04N2209/045
Abstract: An imaging device including an electronic shutter and a pixel array with color pixels with different characteristics of spectral sensitivity arranged. The pixel array part has at least one clear pixel, the plurality of color pixels including at least two of (i) a first color filter pixel having a peak of spectral sensitivity characteristics for red, (ii) a second color filter pixel having a peak for blue, and (iii) a third color filter pixel having a peak for green. The clear pixel has a high transmittance arranged in an oblique pixel array system at a given position of a given row and a given column with respect to the first color filter pixel, the second color filter pixel, and the third color filter pixel. An electronic shutter is separately driven for the at least one clear pixel and for the plurality of color filter pixels.
Abstract translation: 包括电子快门和具有不同光谱灵敏特性的彩色像素的像素阵列的成像装置。 所述像素阵列部分具有至少一个透明像素，所述多个彩色像素包括以下中的至少两个：（i）具有用于红色的光谱灵敏度特性峰值的第一滤色器像素，（ii）具有峰值的第二滤色器像素 用于蓝色，以及（iii）具有绿色峰值的第三滤色器像素。 透明像素在相对于第一滤色器像素，第二滤色器像素和第三滤色器像素的给定行的给定位置和给定列的倾斜像素阵列系统中具有高透射率。 对于至少一个清晰像素和多个滤色器像素分别驱动电子快门。
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9.发明授权Solid state image pickup device and method of producing solid state image pickup device 有权固体摄像装置及固体摄像装置的制造方法公开(公告)号：US09530816B2
公开(公告)日：2016-12-27
申请号：US14610010
申请日：2015-01-30
Applicant: Sony Corporation
Inventor： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC: H01L27/146 , H01L23/544 , H01L31/0216 , H01L31/0232
CPC classification number: H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
Abstract translation: 形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。 使用活性区域的硅化物膜也可以用于配准标记。 此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。 也可以在背面（照射侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现期望的配准。
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10.发明申请公开(公告)号：US20160343768A1
公开(公告)日：2016-11-24
申请号：US15225303
申请日：2016-08-01
Applicant: Sony Corporation
Inventor： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC: H01L27/146
CPC classification number: H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
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