公开(公告)号：US08173281B2

公开(公告)日：2012-05-08

申请号：US12513457

申请日：2007-11-07

申请人： Shuji Nakazawa ,  Yucong Wang ,  Masahide Akiyama ,  Takuya Gentsu ,  Toshiyuki Sue

发明人： Shuji Nakazawa ,  Yucong Wang ,  Masahide Akiyama ,  Takuya Gentsu ,  Toshiyuki Sue

IPC分类号： G11B5/127 ,  C04B35/117 ,  C04B35/56

CPC分类号： G11B5/58 ,  B82Y30/00 ,  C04B35/117 ,  C04B35/5611 ,  C04B35/6455 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3232 ,  C04B2235/3843 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/761 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2235/963 ,  G11B5/40 ,  G11B5/6082 ,  Y10T428/1157

摘要： A ceramic sintered body contains Al2O3 crystal grains, internal TiC crystal grains existing in the Al2O3 crystal grains and external TiC crystal grains other than the internal TiC crystal grains. The Al2O3 crystal grains and the external TiC crystal grains retain stress caused by the difference in thermal expansion coefficient remaining after sintering, so that the Al2O3 crystal grains and the external TiC crystal grains pull each other in the interface therebetween. As a result, when the ceramic sintered body is machined, micro-cracks generated in the interface can easily grow due to the residual stress in addition to the shearing force caused by the machining operation, so that machinability is improved.

摘要翻译： 陶瓷烧结体包含Al 2 O 3晶粒，存在于Al 2 O 3晶粒中的内部TiC晶粒和外部TiC晶粒以外的TiC晶粒。 Al 2 O 3晶粒和外部TiC晶粒保持由烧结后剩余的热膨胀系数的差异引起的应力，使得Al 2 O 3晶粒和外部TiC晶粒在其间的界面处相互牵引。 结果，当加工陶瓷烧结体时，除了由机械加工操作引起的剪切力之外，由于残余应力，在界面中产生的微裂纹容易生长，从而提高了切削性。

公开(公告)号：US20100061013A1

公开(公告)日：2010-03-11

申请号：US12513457

申请日：2007-11-07

申请人： Shuji Nakazawa ,  Yucong Wang ,  Masahide Akiyama ,  Takuya Gentsu ,  Toshiyuki Sue

发明人： Shuji Nakazawa ,  Yucong Wang ,  Masahide Akiyama ,  Takuya Gentsu ,  Toshiyuki Sue

IPC分类号： G11B5/127 ,  C04B35/56 ,  G11B5/33

CPC分类号： G11B5/58 ,  B82Y30/00 ,  C04B35/117 ,  C04B35/5611 ,  C04B35/6455 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3232 ,  C04B2235/3843 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/761 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2235/963 ,  G11B5/40 ,  G11B5/6082 ,  Y10T428/1157

摘要： Greater emphasis has been placed on smoothness of the floating surface for the applications with floating height of 10 nm or less. To obtain a smooth floating surface, it must be polished with diamond abrasive having a mean particle size of 0.1 μm or less, and conventional ceramic sintered body has poor machinability and it is impossible to use the magnetic heads made of this ceramic sintered body at a floating height of 10 nm or less.The ceramic sintered body according to the present invention contains Al2O3 crystal grains, internal TiC crystal grains existing in the Al2O3 crystal grains and external TiC crystal grains other than the internal TiC crystal grains. The Al2O3 crystal grains and the external TiC crystal grains retain stress caused by the difference in thermal expansion coefficient remaining after sintering, so that the Al2O3 crystal grains and the external TiC crystal grains pull each other in the interface therebetween. As a result, when the ceramic sintered body is machined, micro-cracks generated in the interface can easily grow due to the residual stress in addition to the shearing force caused by the machining operation, so that machinability is improved.

摘要翻译： 对于浮动高度为10nm或更小的应用，浮动表面的光滑度更加重视。 为了获得平滑的浮动表面，必须用平均粒度为0.1μm以下的金刚石磨料抛光，并且常规的陶瓷烧结体具有差的机械加工性，并且不可能使用由该陶瓷烧结体制成的磁头 浮动高度为10nm以下。 根据本发明的陶瓷烧结体包含存在于Al 2 O 3晶粒中的Al 2 O 3晶粒，存在于内部TiC晶粒和外部TiC晶粒以外的TiC晶粒。 Al 2 O 3晶粒和外部TiC晶粒保持由烧结后剩余的热膨胀系数的差异引起的应力，使得Al 2 O 3晶粒和外部TiC晶粒在其间的界面处相互牵引。 结果，当加工陶瓷烧结体时，除了由机械加工操作引起的剪切力之外，由于残余应力，在界面中产生的微裂纹容易生长，从而提高了切削性。

公开(公告)号：US20100315743A1

公开(公告)日：2010-12-16

申请号：US12740692

申请日：2010-04-29

申请人： Yucong WANG ,  Shuji Nakazawa ,  Takuya Gentsu

发明人： Yucong WANG ,  Shuji Nakazawa ,  Takuya Gentsu

IPC分类号： G11B15/64 ,  G11B5/33

CPC分类号： G11B5/3106 ,  C04B35/117 ,  C04B35/62695 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/3206 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3856 ,  C04B2235/3886 ,  C04B2235/3895 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6581 ,  C04B2235/661 ,  C04B2235/785 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/963 ,  G11B5/102 ,  G11B5/255 ,  G11B5/3169 ,  G11B5/3173 ,  G11B5/6082 ,  Y10T428/1157 ,  Y10T428/1179

摘要： A substrate for a magnetic read/write head is disclosed. The substrate can reduce detachment of crystal grains when unexpected vibrations or impacts are applied. The substrate may be machined when the substrate is cut into strips or a flow path surface recess is formed to produce the magnetic read/write head. The reduced detachment of crystal grains makes the magnetic read/write head more resilient to chipping, which allows the magnetic read/write head to have good performance in read/write.

摘要翻译： 公开了一种用于磁读/写头的衬底。 当施加意外的振动或冲击时，基板可以减少晶粒的分离。 当衬底被切割成条带时或者形成流路表面凹部以产生磁读/写头时，可以对衬底进行加工。 晶粒的分离减少使得磁读/写头对切屑更具弹性，这使得磁读/写头在读/写中具有良好的性能。

公开(公告)号：US20100091404A1

公开(公告)日：2010-04-15

申请号：US12642708

申请日：2009-12-18

申请人： Yucong WANG ,  Shuji Nakazawa ,  Yuuya Nakao ,  Takuya Gentsu ,  Nobuyuki Horiuchi

发明人： Yucong WANG ,  Shuji Nakazawa ,  Yuuya Nakao ,  Takuya Gentsu ,  Nobuyuki Horiuchi

IPC分类号： G11B5/60 ,  G11B5/127

CPC分类号： G11B5/3106 ,  G11B5/102 ,  G11B5/3173 ,  G11B5/40 ,  G11B5/6011 ,  Y10T428/1157

摘要： A substrate for a magnetic read/write head is disclosed. The substrate can reduce detachment of crystal grains when the substrate is machined. The substrate may be machined when the substrate is cut into strips or a flow path surface recess is formed to produce the magnetic read/write head. The reduced detachment of crystal grains makes the magnetic read/write head more resilient to chipping, which allows the magnetic read/write head to have a lower and more stable flying height that increases recording density.

摘要翻译： 公开了一种用于磁读/写头的衬底。 当加工衬底时，衬底可以减少晶粒的分离。 当衬底被切割成条带时或者形成流路表面凹部以产生磁读/写头时，可以对衬底进行加工。 晶粒的分离减少使得磁读/写头对切屑更具弹性，这使得磁读/写头具有更低和更稳定的飞行高度，从而提高了记录密度。

公开(公告)号：US08318330B2

公开(公告)日：2012-11-27

申请号：US12642708

申请日：2009-12-18

申请人： Yucong Wang ,  Shuji Nakazawa ,  Yuuya Nakao ,  Takuya Gentsu ,  Nobuyuki Horiuchi

发明人： Yucong Wang ,  Shuji Nakazawa ,  Yuuya Nakao ,  Takuya Gentsu ,  Nobuyuki Horiuchi

IPC分类号： G11B5/127 ,  C04B35/117

CPC分类号： G11B5/3106 ,  G11B5/102 ,  G11B5/3173 ,  G11B5/40 ,  G11B5/6011 ,  Y10T428/1157

摘要： A substrate for a magnetic read/write head is disclosed. The substrate can reduce detachment of crystal grains when the substrate is machined. The substrate may be machined when the substrate is cut into strips or a flow path surface recess is formed to produce the magnetic read/write head. The reduced detachment of crystal grains makes the magnetic read/write head more resilient to chipping, which allows the magnetic read/write head to have a lower and more stable flying height that increases recording density.

摘要翻译： 公开了一种用于磁读/写头的衬底。 当加工衬底时，衬底可以减少晶粒的分离。 当衬底被切割成条带时或者形成流路表面凹部以产生磁读/写头时，可以对衬底进行加工。 晶粒的分离减少使得磁读/写头对切屑更具弹性，这使得磁读/写头具有更低和更稳定的飞行高度，从而提高了记录密度。

公开(公告)号：US06417461B1

公开(公告)日：2002-07-09

申请号：US09699666

申请日：2000-10-30

申请人： Seiichi Hirahara ,  Akira Nakayama ,  Akira Imoto ,  Shuji Nakazawa ,  Tatsuji Furuse

发明人： Seiichi Hirahara ,  Akira Nakayama ,  Akira Imoto ,  Shuji Nakazawa ,  Tatsuji Furuse

IPC分类号： H05K103

CPC分类号： H01G4/40 ,  H03H2001/0085 ,  H05K1/0237 ,  H05K1/0298 ,  H05K1/0306 ,  H05K1/16 ,  H05K1/162 ,  H05K1/165 ,  H05K3/4629

摘要： A circuit substrate in which the conductor portions constituting the functional devices formed in the insulating board have interfacial electric conductivities &sgr; of not larger than 2.90×107 &OHgr;−1·m−1 to greatly lower the insertion losses.

摘要翻译： 其中构成绝缘板中形成的功能元件的导体部分的电路基板具有不大于2.90×107欧姆 - 1.m-1的界面电导率σ，以大大降低插入损耗。

公开(公告)号：US20140345693A1

公开(公告)日：2014-11-27

申请号：US14345221

申请日：2012-08-17

申请人： Hideaki Asao ,  Shintaro Kubo ,  Shuji Nakazawa ,  Yusuke Miyamichi ,  Tatsuya Domoto ,  Keizo Takeda ,  Kazuki Yamada ,  Kotaro Tanigawa ,  Hiromitsu Ogawa

发明人： Hideaki Asao ,  Shintaro Kubo ,  Shuji Nakazawa ,  Yusuke Miyamichi ,  Tatsuya Domoto ,  Keizo Takeda ,  Kazuki Yamada ,  Kotaro Tanigawa ,  Hiromitsu Ogawa

IPC分类号： H01L31/0749 ,  H01L31/18

CPC分类号： H01L31/0749 ,  H01L31/0322 ,  H01L31/0465 ,  Y02E10/541 ,  Y02P70/521

摘要： A photoelectric conversion device and a method for producing a photoelectric conversion device are disclosed. The photoelectric conversion device includes a light-absorbing layer. The light-absorbing layer contains a chalcopyrite-based compound, and has a peak intensity ratio IB/IA in a range of 3 to 9, where IA represents a peak intensity of the peak formed by combining a peak of a (220) plane and a peak of a (204) plane in X-ray diffraction, and IB represents a peak intensity of a (112) plane.

摘要翻译： 公开了光电转换装置和光电转换装置的制造方法。 光电转换装置包括光吸收层。 光吸收层含有基于黄铜矿的化合物，其峰强度比IB / IA在3至9的范围内，其中IA表示通过组合（220）面的峰和 X射线衍射中的（204）面的峰，IB表示（112）面的峰强度。

公开(公告)号：US20130037901A1

公开(公告)日：2013-02-14

申请号：US13643499

申请日：2011-04-22

申请人： Shintaro Kubo ,  Shuji Nakazawa ,  Rui Kamada ,  Seiji Oguri ,  Shinnosuke Ushio ,  Shuichi Kasai ,  Seiichiro Inai

发明人： Shintaro Kubo ,  Shuji Nakazawa ,  Rui Kamada ,  Seiji Oguri ,  Shinnosuke Ushio ,  Shuichi Kasai ,  Seiichiro Inai

IPC分类号： H01L31/0224

CPC分类号： H01L27/142 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/0322 ,  H01L31/0384 ,  H01L31/03923 ,  H01L31/046 ,  H01L31/0749 ,  Y02E10/541

摘要： It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer.

摘要翻译： 本发明的目的是提供一种具有高光电转换效率的光电转换装置，其通过增加光吸收层和电极层之间的接触力来提高可靠性。 光电转换装置包括电极层和位于电极层上的光吸收层。 光吸收层含有化合物半导体。 光吸收层包括靠近电极层的第一层和位于第一层上的第二层。 第一层具有低于第二层的空隙率。

公开(公告)号：US08709860B2

公开(公告)日：2014-04-29

申请号：US13640526

申请日：2011-04-12

申请人： Shintaro Kubo ,  Rui Kamada ,  Yusuke Miyamichi ,  Shuji Nakazawa

发明人： Shintaro Kubo ,  Rui Kamada ,  Yusuke Miyamichi ,  Shuji Nakazawa

IPC分类号： H01L21/00 ,  H01L31/032 ,  H01L21/02 ,  H01L31/0749 ,  H01L31/18

CPC分类号： H01L31/0322 ,  H01L21/02628 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/056 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/52 ,  Y02E10/541 ,  Y02P70/521

摘要： The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor layer includes a connection layer that is located at a position on the one main surface side of the electrode and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes.

摘要翻译： 目的是提高光电转换装置的转换效率。 该目的可以通过包括电极和半导体层的光电转换装置来实现，该电极和半导体层设置在电极的一个主表面上并且包含I-III-VI族化合物半导体，其中半导体层包括位于 在电极的一个主表面侧的位置处，并且具有这样的趋势：越靠近一个主表面，通过将IB族元素的物质的量除以III的物质的量获得的商量越大 -B组元素变成。

公开(公告)号：US20130026588A1

公开(公告)日：2013-01-31

申请号：US13640526

申请日：2011-04-12

申请人： Shintaro Kubo ,  Rui Kamada ,  Yusuke Miyamichi ,  Shuji Nakazawa

发明人： Shintaro Kubo ,  Rui Kamada ,  Yusuke Miyamichi ,  Shuji Nakazawa

IPC分类号： H01L31/0264 ,  H01L31/18

CPC分类号： H01L31/0322 ,  H01L21/02628 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/056 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/52 ,  Y02E10/541 ,  Y02P70/521

摘要： The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor layer includes a connection layer that is located at a position on the one main surface side of the electrode and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes.

摘要翻译： 目的是提高光电转换装置的转换效率。 该目的可以通过包括电极和半导体层的光电转换装置来实现，该电极和半导体层设置在电极的一个主表面上并且包含I-III-VI族化合物半导体，其中半导体层包括位于 在电极的一个主表面侧的位置处，并且具有这样的趋势：越靠近一个主表面，通过将IB族元素的物质的量除以III的物质的量获得的商量越大 -B组元素变成。