公开(公告)号：US5040038A

公开(公告)日：1991-08-13

申请号：US262056

申请日：1988-10-24

Applicant: Naoki Yutani ,  Sotoju Asai ,  Shiro Hine ,  Satoshi Hirose ,  Hidekazu Yamamoto ,  Masashi Ueno

Inventor： Naoki Yutani ,  Sotoju Asai ,  Shiro Hine ,  Satoshi Hirose ,  Hidekazu Yamamoto ,  Masashi Ueno

IPC: H01L27/148 ,  H04N5/335 ,  H04N5/365 ,  H04N5/372

CPC classification number: H01L27/14831

Abstract: A solid-state image sensor comprises photoelectric converting devices (22) formed on a p type semiconductor substrate (1), transfer gates (26) for reading signal charges therefrom, scanning lines (21) for selecting the transfer gates (26), and transfer electrodes (11) of the first layer and transfer electrodes (12) of the second layer alternately disposed for transferring in the vertical direction the read signal charges. All the electrodes of the transfer gates (26) are formed integrally with the transfer electrodes (12) of the second layer, with the result that all the electrodes of the transfer gates (26) are common to the transfer electrodes of the same layer (the second layer). Although the potential wall (340) is formed in the transfer channel (3) beneath the transfer electrode (12) connected to the transfer gate (26), the same is insulated from adjacent the transfer electrode (11) on the charge transfer direction side. As a result, when a voltage is applied to the transfer electrode adjacent thereto, the signal charges are fully transferred.

Abstract translation: 固态图像传感器包括形成在p型半导体衬底（1）上的光电转换器件（22），用于读取信号电荷的传输门（26），用于选择传输门（26）的扫描线（21） 交替地设置第一层的电极（11）和第二层的传输电极（12），用于在垂直方向上传送读取信号电荷。 传输栅极（26）的所有电极与第二层的传输电极（12）整体形成，结果是传输栅极（26）的所有电极对同一层的传输电极是共同的（ 第二层）。 尽管在连接到传输栅极（26）的传输电极（12）下方的传输沟道（3）中形成了电位壁（340），但是在电荷转移方向侧上与传输电极（11）相邻的电位壁 。 结果，当对与其相邻的转印电极施加电压时，信号电荷被完全转印。

公开(公告)号：US4547231A

公开(公告)日：1985-10-15

申请号：US625783

申请日：1984-06-26

Applicant: Shiro Hine

Inventor： Shiro Hine

IPC: H01L21/76 ,  H01L21/20 ,  H01L21/762 ,  H01L21/205

CPC classification number: H01L21/76294 ,  H01L21/02639 ,  Y10S148/026 ,  Y10S148/05

Abstract: Semiconductor layers are selectively epitaxially grown in portions having an insulating film removed which is formed on a substrate by selective epitaxial growth under reduced pressure. With respect to a circumferential region outwardly of the removed portions in which the semiconductor elements are to be provided, there are formed one or more removed portions (dummy portions) in which no semiconductor element is provided, thereby making arrangement of the removed portions as even as possible with respect to the entire surface of the insulating film, to overcome position dependency in flatness of the semiconductor layers to be obtained. The semiconductor layers grown in the dummy portions may be left not to have semiconductor elements formed therein.

Abstract translation: 选择性地外延生长半导体层，其部分具有去除的绝缘膜，该绝缘膜在减压下通过选择性外延生长形成在衬底上。 对于其中设置有半导体元件的去除部分向外的周向区域，形成有一个或多个未设置半导体元件的去除部分（虚设部分），从而使去除部分的布置为均匀 相对于绝缘膜的整个表面尽可能地克服要获得的半导体层的平坦度的位置依赖性。 在虚拟部分中生长的半导体层可以不形成在其中的半导体元件。

公开(公告)号：US4779259A

公开(公告)日：1988-10-18

申请号：US855110

申请日：1986-04-23

Applicant: Keizo Kono ,  Mitsushige Kondou ,  Natsuro Tsubouchi ,  Shiro Hine ,  Hiroshi Nishihara ,  Toshiaki Suhara

Inventor： Keizo Kono ,  Mitsushige Kondou ,  Natsuro Tsubouchi ,  Shiro Hine ,  Hiroshi Nishihara ,  Toshiaki Suhara

IPC: G11B7/12 ,  G11B7/135 ,  G11B7/00 ,  G11B21/10

CPC classification number: G11B7/1384 ,  G11B7/124 ,  Y10S359/90

Abstract: An optical IC-type head assembly for recording and for reading information on an optical disc, comprising a substrate, a light guiding layer comprising a dielectric thin film formed monolithically on the substrate, a laser oscillator for injecting the laser beam into the light guiding layer, a grating coupler for converging the laser beam on the optical disc, and a photo detector for receiving the beam reflected by the optical disc and coming out of the grating coupler. In one embodiment the substrate is made of material having cleavability. One side surface of the light guiding layer receiving the laser beam is a break surface formed by cleaving the substrate along the cleavage plane. The photo detector is disposed at the break surface of the light guiding layer. The substrate is preferably made of single crystal material. In another embodiment, a beam splitter is disposed between the laser oscillator and the grating coupler for splitting the reflected beam coming out of the grating coupler into two symmetrical beams. Each split beam forms an acute angle with respect to the optical axis of the reflected beam. The acute angle is preferably less than 30 degrees. The beam splitter may converge each of the split beams at a photo detecting element disposed between the laser oscillator and the grating coupler.

Abstract translation: 一种用于记录和读取光盘上的信息的光学IC型头组件，包括基底，包括在基底上一体地形成的电介质薄膜的导光层，用于将激光束注入导光层的激光振荡器 ，用于将激光束会聚在光盘上的光栅耦合器，以及用于接收由光盘反射并从光栅耦合器出来的光束的光电检测器。 在一个实施例中，衬底由具有可切割性的材料制成。 接收激光束的导光层的一个侧表面是通过沿着解理面切割基板而形成的断裂面。 光检测器设置在导光层的断裂面处。 衬底优选由单晶材料制成。 在另一个实施例中，分束器设置在激光振荡器和光栅耦合器之间，用于将从光栅耦合器出来的反射光束分成两个对称光束。 每个分割光束相对于反射光束的光轴形成锐角。 锐角优选小于30度。 分束器可以在设置在激光振荡器和光栅耦合器之间的光电检测元件上会聚每个分束。

公开(公告)号：US4430547A

公开(公告)日：1984-02-07

申请号：US309098

申请日：1981-10-06

Applicant: Masahiro Yoneda ,  Shiro Hine ,  Hiroshi Koyama

Inventor： Masahiro Yoneda ,  Shiro Hine ,  Hiroshi Koyama

IPC: C23F4/00 ,  H01J37/16 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  B23K9/00

CPC classification number: H01L21/67069 ,  H01J37/16 ,  H01J37/32449 ,  H01J37/32724

Abstract: A cleaning apparatus for a plasma etching system for etching a sample which includes a chamber having an inlet and an outlet, a sample table positioned in the chamber and which further includes a first electrode, a counter electrode positioned in the chamber opposite the first electrode and a plurality of heating mechanisms positioned in the inlet and outlet of the chamber, in the counter electrode and in the sample table for desorbing a reaction product adsorbed on surfaces of the inlet and outlet of the chamber, the counter electrode and the sample table prior to plasma etching of the sample.

Abstract translation: 一种用于蚀刻样品的等离子体蚀刻系统的清洁装置，其包括具有入口和出口的室，位于所述室中的样品台，并且还包括第一电极，位于与所述第一电极相对的所述室中的对电极， 多个加热机构，位于室的入口和出口中，在对电极和样品台中，用于解吸吸附在室的入口和出口表面上的反应产物，对电极和样品台之前 样品的等离子体蚀刻。

公开(公告)号：US4760568A

公开(公告)日：1988-07-26

申请号：US911432

申请日：1986-09-25

Applicant: Shiro Hine

Inventor： Shiro Hine

IPC: G11B7/12 ,  G11B7/135 ,  G11B7/00

CPC classification number: G11B7/1384 ,  G11B7/124

Abstract: An optical head for a laser memory disk in accordance with the present invention comprises: a substrate (1); a waveguide layer (3) formed over a main surface of the substrate; a semiconductor laser (4) for injecting laser beams into the waveguide layer, the semiconductor laser being set in a hollow (17) dug down at least into the waveguide layer; a focusing grating coupler (6) formed on the waveguide layer for focusing the injected laser beams on the memory disk and introducing beams reflected back from the disk into the waveguide; beam splitter means (5) formed on the waveguide layer between the semiconductor laser and the focusing grating coupler, for bisecting each of the reflected beams at a prescribed acute angle; and photodetector means (10) for converting the bisected beams into electrical signals, the photodetector means being provided along both the sides of the semiconductor laser and situated not nearer to the focusing grating coupler as compared with the semiconductor laser.

Abstract translation: 根据本发明的用于激光存储盘的光学头包括：基底（1）; 形成在所述基板的主表面上的波导层（3） 用于将激光束注入到所述波导层中的半导体激光器（4），将所述半导体激光器设置在至少被挖掘到所述波导层中的中空部（17）中; 形成在波导层上的聚焦光栅耦合器（6），用于将注入的激光束聚焦在存储盘上，并将从光盘反射回的光束引入波导; 形成在半导体激光器和聚焦光栅耦合器之间的波导层上的分束器装置（5），用于以规定的锐角将每个反射光束平分; 以及用于将二等分光束转换为电信号的光电检测器装置（10），与半导体激光器相比，光电检测器装置沿半导体激光器的两侧设置并且不靠近聚焦光栅耦合器。

公开(公告)号：US4667392A

公开(公告)日：1987-05-26

申请号：US881682

申请日：1986-07-03

Applicant: Shiro Hine ,  Hidenobu Ishikura

Inventor： Shiro Hine ,  Hidenobu Ishikura

IPC: H01L27/146 ,  H04N5/335 ,  H04N5/359 ,  H04N5/372 ,  H04N5/374 ,  H01L21/00 ,  H01L31/00

CPC classification number: H01L27/14654 ,  H01L27/14645

Abstract: A solid-state image sensor comprises an n-type silicon substrate (11), a p-type silicon layer (12) formed on the substrate (11), a plurality of nMOS transistors (1), a field insulating film (13) for separating the nMOS transistors (1) and a buried insulating film (20) provided between the substrate (11) and the field insulating film (13). The buried insulating film (20) serve to prevent electrons from flowing between the adjacent nMOS transistors (1). Accordingly, occurrence of a color mixture phenomenon, a blooming phenomenon or a smear phenomenon can be suppressed. In addition, when a p-type junction layer (21) is provided on the substrate (11) and a bias power supply (19) is connected between them, and when the voltage is adjusted, the red color sensitivity of a photodiode consisting of an n-type source region (16) in each nMOS transistor (1) can be uniformly and easily adjusted.

Abstract translation: 固态图像传感器包括n型硅衬底（11），形成在衬底（11）上的p型硅层（12），多个nMOS晶体管（1），场绝缘膜（13） 用于分离nMOS晶体管（1）和设置在衬底（11）和场绝缘膜（13）之间的掩埋绝缘膜（20）。 掩埋绝缘膜（20）用于防止电子在相邻的nMOS晶体管（1）之间流动。 因此，可以抑制发生混色现象，起霜现象或拖尾现象。 此外，当在基板（11）上设置p型接合层（21），并且在它们之间连接有偏置电源（19）时，并且当调整电压时，由光电二极管组成的光电二极管的红色灵敏度 可以均匀且容易地调节每个nMOS晶体管（1）中的n型源区（16）。

公开(公告)号：US4579621A

公开(公告)日：1986-04-01

申请号：US624361

申请日：1984-06-25

Applicant: Shiro Hine

Inventor： Shiro Hine

IPC: H01L21/205 ,  C30B25/04 ,  H01L21/20 ,  H01L21/311 ,  C30B23/04

CPC classification number: H01L21/31116 ,  C30B25/04 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639

Abstract: Disclosed herein is a selective epitaxial growth method for forming an opening, utilizing anisotropic dry etching, in a silicon oxide film formed on a silicon substrate and epitaxially growing a silicon layer selectively in the opening. The anisotropic dry etching is performed employing a mixed gas of carbon tetrafluoride and hydrogen, and the wall surface of the opening is perpendicular to the major surface of the silicon substrate. The epitaxial growth is achieved under a temperature of 900.degree. to 1100.degree. C. utilizing a mixed gas of a low pressure under 100 Torr. containing dichlorosilane as a silicon source and hydrogen as a carrier gas. A silicon layer thus obtained contains substantially no lattice defects such as a stacked fault.

Abstract translation: 本文公开了一种选择性外延生长方法，用于在硅衬底上形成的氧化硅膜中形成利用各向异性干蚀刻的开口，并在开口中选择性地外延生长硅层。 使用四氟化碳和氢气的混合气体进行各向异性干蚀刻，并且开口的壁面垂直于硅基板的主表面。 使用低压在100乇下的混合气体，在900〜1100℃的温度下实现外延生长。 含有作为硅源的二氯硅烷和作为载气的氢。 由此获得的硅层基本上不含有诸如堆叠故障的晶格缺陷。

公开(公告)号：US4859033A

公开(公告)日：1989-08-22

申请号：US188210

申请日：1988-04-29

Applicant: Keizo Kono ,  Mitsushige Kondou ,  Natsuro Tsubouchi ,  Shiro Hine ,  Hiroshi Nishihara ,  Toshiaki Suhara

Inventor： Keizo Kono ,  Mitsushige Kondou ,  Natsuro Tsubouchi ,  Shiro Hine ,  Hiroshi Nishihara ,  Toshiaki Suhara

IPC: G11B7/12 ,  G11B7/135

CPC classification number: G11B7/1384 ,  G11B7/124 ,  Y10S359/90

Abstract: An optical IC-type head assembly for recording and for reading information on an optical disc, comprising a substrate, a light guiding layer comprising a dielectric thin film formed monolithically on the substrate, a laser oscillator for injecting the laser beam into the light guiding layer, a grating coupler for converging the laser beam on the optical disc, and a photo detector for receiving the beam reflected by the optical disc and coming out of the grating coupler. In one embodiment the substrate is made of material having cleavability. One side surface of the light guiding layer receiving the laser beam is a break surface formed by cleaving the substrate along the cleavage plane. The photo detector is disposed at the break surface of the light guiding layer. The substrate is preferably made of single crystal material. In another embodiment, a beam splitter is disposed between the laser oscillator and the grating coupler for splitting the reflected beam coming out of the grating coupler into two symmetrical beams. Each split beam forms an acute angle with respect to the optical axis of the reflected beam. The acute angle is preferably less than 30 degrees. The beam splitter may converge each of the split beams at a photo detecting element disposed between the laser oscillator and the grating coupler.

Abstract translation: 一种用于记录和读取光盘上的信息的光学IC型头组件，包括基底，包括在基底上一体地形成的电介质薄膜的导光层，用于将激光束注入导光层的激光振荡器 ，用于将激光束会聚在光盘上的光栅耦合器，以及用于接收由光盘反射并从光栅耦合器出来的光束的光电检测器。 在一个实施例中，衬底由具有可切割性的材料制成。 接收激光束的导光层的一个侧表面是通过沿着解理面切割基板而形成的断裂面。 光检测器设置在导光层的断裂面处。 衬底优选由单晶材料制成。 在另一个实施例中，分束器设置在激光振荡器和光栅耦合器之间，用于将从光栅耦合器出来的反射光束分成两个对称光束。 每个分割光束相对于反射光束的光轴形成锐角。 锐角优选小于30度。 分束器可以在设置在激光振荡器和光栅耦合器之间的光电检测元件上会聚每个分束。

公开(公告)号：US4716559A

公开(公告)日：1987-12-29

申请号：US900792

申请日：1986-08-27

Applicant: Shiro Hine

Inventor： Shiro Hine

IPC: G11B7/085 ,  G11B7/12 ,  G11B7/124 ,  G11B7/135 ,  G11B7/1384 ,  G02B6/10 ,  G02B6/32

CPC classification number: G11B7/08547 ,  G11B7/124 ,  G11B7/1384

Abstract: An optical head for a laser memory disk in accordance with the present invention containing a substrate (1); a waveguide layer (3) formed over a main surface of the substrate; a semiconductor laser (4) provided at an end of the waveguide layer for injecting laser beams into the waveguide; a focusing grating coupler (6) formed on the waveguide layer for focusing the injected laser beams on the disk and introducing beams reflected back from the disk into the waveguide; beam splitters (5) formed on the waveguide layer between the semiconductor laser and the focusing grating coupler, for bisecting each of the reflected beams at a prescribed acute angle; photodetectors (10) for converting the bisected beams into electrical signals; optical isolators (17, 18) formed between the semiconductor laser and the photodetectors.

Abstract translation: 根据本发明的用于激光存储盘的光学头，其包含基板（1）; 形成在所述基板的主表面上的波导层（3） 半导体激光器（4），设置在所述波导层的端部，用于将激光束注入到所述波导中; 形成在波导层上的聚焦光栅耦合器（6），用于将注入的激光束聚焦在盘上并将从光盘反射回的光束引入波导中; 形成在半导体激光器和聚焦光栅耦合器之间的波导层上的分束器（5），用于以规定的锐角将每个反射光束平分; 用于将平分束转换成电信号的光电探测器（10）; 在半导体激光器和光电检测器之间形成的光隔离器（17,18）。

公开(公告)号：US4611223A

公开(公告)日：1986-09-09

申请号：US526402

申请日：1983-08-25

Applicant: Shiro Hine ,  Hidenobu Ishikura

Inventor： Shiro Hine ,  Hidenobu Ishikura

IPC: H01L27/146 ,  H04N5/335 ,  H04N5/359 ,  H04N5/372 ,  H04N5/374 ,  H01L27/14 ,  H01L29/78

CPC classification number: H01L27/14654 ,  H01L27/14645

Abstract: A solid-state image sensor comprises an n-type silicon substrate (11), a p-type silicon layer (12) formed on the substrate (11), a plurality of nMOS transistors (1), a field insulating film (13) for separating the nMOS transistors (1) and a buried insulating film (20) provided between the substrate (11) and the field insulating film (13). The buried insulating film (20) serve to prevent electrons from flowing between the adjacent nMOS transistors (1). Accordingly, occurrence of a color mixture phenomenon, a blooming phenomenon or a smear phenomenon can be suppressed. In addition, when a p-type junction layer (21) is provided on the substrate (11) and a bias power supply (19) is connected between them, and when the voltage is adjusted, the red color sensitivity of a photodiode consisting of an n-type source region (16) in each nMOS transistor (1) can be uniformly and easily adjusted.

Abstract translation: 固态图像传感器包括n型硅衬底（11），形成在衬底（11）上的p型硅层（12），多个nMOS晶体管（1），场绝缘膜（13） 用于分离nMOS晶体管（1）和设置在衬底（11）和场绝缘膜（13）之间的掩埋绝缘膜（20）。 掩埋绝缘膜（20）用于防止电子在相邻的nMOS晶体管（1）之间流动。 因此，可以抑制发生混色现象，起霜现象或拖尾现象。 此外，当在基板（11）上设置p型接合层（21），并且在它们之间连接有偏置电源（19）时，并且当调整电压时，由光电二极管组成的光电二极管的红色灵敏度 可以均匀且容易地调节每个nMOS晶体管（1）中的n型源区（16）。