公开(公告)号：US08528762B2

公开(公告)日：2013-09-10

申请号：US12534534

申请日：2009-08-03

申请人： Shinichi Kurita ,  Mehran Behdjat ,  Makoto Inagawa

发明人： Shinichi Kurita ,  Mehran Behdjat ,  Makoto Inagawa

IPC分类号： B65D6/28

CPC分类号： B65D7/06 ,  B23K15/0006 ,  B65D7/38 ,  H01L21/67379

摘要： Embodiments disclosed herein relate to a large vacuum chamber body that has been welded together. The chamber body may have a high emissivity coating on at least one surface therein. Due to the large size of the chamber body, the chamber body may be formed by welding several pieces together rather than forging the body from a single piece of metal. The pieces may be welded together at a location spaced from the corner of the body, which may be under the greatest stress during evacuation, to ensure that the weld, which may be the weakest point in the body, does not fail. At least one surface of the chamber body may be coated with a high emissivity coating to aid in heat transfer from incoming, heated substrates. The high emissivity coating may increase substrate throughput by lowering the time that may be needed to reduce the substrate temperature.

摘要翻译： 本文公开的实施例涉及已经焊接在一起的大型真空室主体。 腔体可以在其中的至少一个表面上具有高发射率涂层。 由于腔室主体的尺寸较大，可以通过将多个部件焊接在一起而不是从单个金属件锻造主体而形成腔体。 这些部件可以在与身体的角部间隔开的位置处被焊接在一起，该位置在排空期间可能处于最大的应力下，以确保可能是身体中最弱点的焊缝不会失效。 室主体的至少一个表面可以涂覆有高发射率涂层，以帮助来自加热的基底的热传递。 高发射率涂层可以通过降低降低衬底温度所需的时间来增加衬底通量。

公开(公告)号：US08070408B2

公开(公告)日：2011-12-06

申请号：US12199341

申请日：2008-08-27

申请人： Mehran Behdjat ,  Shinichi Kurita ,  Makoto Inagawa ,  Suhail Anwar

发明人： Mehran Behdjat ,  Shinichi Kurita ,  Makoto Inagawa ,  Suhail Anwar

IPC分类号： H01L21/677

CPC分类号： H01L21/67201 ,  H01L21/67236

摘要： The present invention generally includes a load lock chamber for transferring large area substrates into a vacuum processing chamber. The load lock chamber may have one or more separate, environmentally isolated environments. Each processing environment may have a plurality exhaust ports for drawing a vacuum. The exhaust ports may be located at the corners of the processing environment. When a substrate is inserted into the load lock chamber from the factory interface, the environment may need to be evacuated. Due to the exhaust ports located at the corners of the environment, any particles or contaminants that may be present may be pulled to the closest corner and out of the load lock chamber without being pulled across the substrate. Thus, substrate contamination may be reduced.

摘要翻译： 本发明通常包括用于将大面积基板输送到真空处理室中的负载锁定室。 负载锁定室可以具有一个或多个单独的环境隔离环境。 每个处理环境可以具有用于抽真空的多个排气口。 排气口可以位于处理环境的拐角处。 当基板从出厂界面插入加载锁定室时，环境可能需要抽真空。 由于位于环境角落处的排气口，可能存在的任何颗粒或污染物可被拉到最靠近的角落并且不被拉过载体锁定室。 因此，可能降低衬底污染。

公开(公告)号：US20100122982A1

公开(公告)日：2010-05-20

申请号：US12534534

申请日：2009-08-03

申请人： SHINICHI KURITA ,  Mehran Behdjat ,  Makoto Inagawa

发明人： SHINICHI KURITA ,  Mehran Behdjat ,  Makoto Inagawa

IPC分类号： B65D6/28 ,  B23K15/00

CPC分类号： B65D7/06 ,  B23K15/0006 ,  B65D7/38 ,  H01L21/67379

摘要： Embodiments disclosed herein relate to a large vacuum chamber body that has been welded together. The chamber body may have a high emissivity coating on at least one surface therein. Due to the large size of the chamber body, the chamber body may be formed by welding several pieces together rather than forging the body from a single piece of metal. The pieces may be welded together at a location spaced from the corner of the body, which may be under the greatest stress during evacuation, to ensure that the weld, which may be the weakest point in the body, does not fail. At least one surface of the chamber body may be coated with a high emissivity coating to aid in heat transfer from incoming, heated substrates. The high emissivity coating may increase substrate throughput by lowering the time that may be needed to reduce the substrate temperature.

摘要翻译： 本文公开的实施例涉及已经焊接在一起的大型真空室主体。 腔体可以在其中的至少一个表面上具有高发射率涂层。 由于腔室主体的尺寸较大，可以通过将多个部件焊接在一起而不是从单个金属件锻造主体而形成腔体。 这些部件可以在与身体的角部间隔开的位置处被焊接在一起，该位置在排空期间可能处于最大的应力下，以确保可能是身体中最弱点的焊缝不会失效。 室主体的至少一个表面可以涂覆有高发射率涂层，以帮助来自加热的基底的热传递。 高发射率涂层可以通过降低降低衬底温度所需的时间来增加衬底通量。

公开(公告)号：US08567756B2

公开(公告)日：2013-10-29

申请号：US12548553

申请日：2009-08-27

申请人： Mehran Behdjat ,  Shinichi Kurita ,  John M. White ,  Suhail Anwar ,  Makoto Inagawa

发明人： Mehran Behdjat ,  Shinichi Kurita ,  John M. White ,  Suhail Anwar ,  Makoto Inagawa

IPC分类号： F16K25/00

CPC分类号： H01L21/67201 ,  F16K15/147 ,  F16K51/02 ,  H01L21/67126

摘要： Embodiments disclosed herein generally relate to a slit valve door assembly for sealing an opening in a chamber. A slit valve door that is pressed against the chamber to seal the slit valve opening moves with the chamber as the slit valve opening shrinks so that an o-ring pressed between the slit valve door and the chamber may move with the slit valve door and the chamber. Thus, less rubbing of the o-ring against the chamber may occur. With less rubbing, fewer particles may be generated and the o-ring lifetime may be extended. With a longer lifetime for the o-ring, substrate throughput may be increased.

摘要翻译： 本文公开的实施例通常涉及用于密封腔室中的开口的狭缝阀门组件。 当狭缝阀开口收缩时，被压靠在腔室上以密封狭缝阀开口的狭缝阀门随着腔室移动，使得压紧在狭缝阀门和腔室之间的O形环可以与狭缝阀门一起移动，并且 房间。 因此，可能会发生O形环相对于室的摩擦较少。 随着摩擦的减少，可能产生更少的颗粒，并且可以延长O形环的寿命。 随着O形圈的寿命更长，衬底产量可能会增加。

公开(公告)号：US20100011785A1

公开(公告)日：2010-01-21

申请号：US12501799

申请日：2009-07-13

申请人： Mehran Behdjat ,  Shinichi Kurita ,  Makoto Inagawa

发明人： Mehran Behdjat ,  Shinichi Kurita ,  Makoto Inagawa

IPC分类号： C23C16/00

CPC分类号： C23C16/54 ,  H01L21/67109 ,  H01L21/67201

摘要： Embodiments disclosed herein generally provide a load lock chamber capable of controlling the temperature of the substrate therein. The load lock chamber may have one or more cooling fluid introduction passages that extend across the chamber. Cooling fluid, such as nitrogen gas, may flow through the cooling fluid passage and enter the load lock chamber. The cooling fluid passages may have openings to permit the cooling fluid to exit the passages and enter the load lock chamber. The openings may be arranged to permit a greater amount of cooling fluid to enter the load lock at locations corresponding to the substrate positions that are in contact with an end effector that places the substrate into the load lock chamber. Additionally, the openings may be arranged to permit a greater amount if cooling fluid to enter the load lock chamber in the center of the chamber as compared to the edge of the chamber.

摘要翻译： 本文公开的实施例通常提供能够控制其中的基板的温度的负载锁定室。 加载锁定室可以具有延伸穿过该腔室的一个或多个冷却流体引入通道。 诸如氮气的冷却流体可以流过冷却流体通道并进入负载锁定室。 冷却流体通道可以具有允许冷却流体离开通道并进入负载锁定室的开口。 开口可以被布置成允许更大量的冷却流体在对应于与将基板放置到负载锁定室中的端部执行器接触的基板位置的位置处进入负载锁定。 此外，与腔室的边缘相比，如果冷却流体进入腔室中心的负载锁定室，则开口可以被布置为允许更大的量。

公开(公告)号：US20100050534A1

公开(公告)日：2010-03-04

申请号：US12548553

申请日：2009-08-27

申请人： Mehran Behdjat ,  Shinichi Kurita ,  John M. White ,  Suhail Anwar ,  Makoto Inagawa

发明人： Mehran Behdjat ,  Shinichi Kurita ,  John M. White ,  Suhail Anwar ,  Makoto Inagawa

IPC分类号： E06B7/16 ,  E06B3/00

CPC分类号： H01L21/67201 ,  F16K15/147 ,  F16K51/02 ,  H01L21/67126

摘要： Embodiments disclosed herein generally relate to a slit valve door assembly for sealing an opening in a chamber. A slit valve door that is pressed against the chamber to seal the slit valve opening moves with the chamber as the slit valve opening shrinks so that an o-ring pressed between the slit valve door and the chamber may move with the slit valve door and the chamber. Thus, less rubbing of the o-ring against the chamber may occur. With less rubbing, fewer particles may be generated and the o-ring lifetime may be extended. With a longer lifetime for the o-ring, substrate throughput may be increased.

摘要翻译： 本文公开的实施例通常涉及用于密封腔室中的开口的狭缝阀门组件。 当狭缝阀开口收缩时，被压靠在腔室上以密封狭缝阀开口的狭缝阀门随着腔室移动，使得压紧在狭缝阀门和腔室之间的O形环可以与狭缝阀门一起移动，并且 房间。 因此，可能会发生O形环相对于室的摩擦较少。 随着摩擦的减少，可能产生更少的颗粒，并且可以延长O形环的寿命。 随着O形圈的寿命更长，衬底产量可能会增加。

公开(公告)号：US08409353B2

公开(公告)日：2013-04-02

申请号：US13277385

申请日：2011-10-20

申请人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

发明人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

IPC分类号： C23C16/00

CPC分类号： H01L21/67115 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/67109

摘要： A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

摘要翻译： 一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。 臭氧发生器能够产生至少70％的臭氧流。 臭氧通过水冷却的注射器进入室内， 其他气体如氢气以提高氧化速率，稀释气体如氮气或O2通过另一个入口进入腔室。 该室保持在低于20托的低压，并且有利地将基底保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中执行， 座。

公开(公告)号：US08796589B2

公开(公告)日：2014-08-05

申请号：US10483793

申请日：2002-07-13

申请人： Efrain Quiles ,  Mehran Behdjat ,  Robert B. Lowrance ,  Michael Robert Rice ,  Brent Vopat

发明人： Efrain Quiles ,  Mehran Behdjat ,  Robert B. Lowrance ,  Michael Robert Rice ,  Brent Vopat

IPC分类号： B65H1/00 ,  F27B5/14

CPC分类号： H01L21/67017 ,  F24F9/00 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/67766 ,  H01L21/68707 ,  Y10T137/0318

摘要： In a first aspect, a first substrate processing system is provided that includes (1) a chamber having a plurality of opening through which a substrate may be transported; (2) a substrate carrier opener coupled to a first one of the plurality of openings; (3) a thermal processing chamber coupled to a second one of the plurality of openings; and (4) a wafer handler contained within the chamber, having a substrate clamping blade and a blade adapted to transport high temperature substrates.

摘要翻译： 在第一方面中，提供了一种第一基板处理系统，其包括：（1）具有多个开口的腔室，通过该开口可以输送基底; （2）耦合到所述多个开口中的第一个开口的衬底载体开启器; （3）耦合到所述多个开口中的第二个的热处理室; 和（4）包含在所述腔室内的晶片处理器，具有衬底夹紧刀片和适于传送高温衬底的刀片。

公开(公告)号：US08497193B2

公开(公告)日：2013-07-30

申请号：US13165502

申请日：2011-06-21

申请人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

发明人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

IPC分类号： H01L21/36 ,  H01L21/00

CPC分类号： H01L21/67115 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/67109

摘要： A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

摘要翻译： 一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。 臭氧发生器能够产生至少70％的臭氧流。 臭氧通过水冷却的注射器进入室内， 其他气体如氢气以提高氧化速率，稀释气体如氮气或O2通过另一个入口进入腔室。 该室被保持在低于20托的低压，并且衬底有利地保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中执行， 座。

公开(公告)号：US08222574B2

公开(公告)日：2012-07-17

申请号：US12055045

申请日：2008-03-25

申请人： Khurshed Sorabji ,  Alexander Lerner ,  Joseph Ranish ,  Aaron Hunter ,  Bruce Adams ,  Mehran Behdjat ,  Rajesh Ramanujam

发明人： Khurshed Sorabji ,  Alexander Lerner ,  Joseph Ranish ,  Aaron Hunter ,  Bruce Adams ,  Mehran Behdjat ,  Rajesh Ramanujam

IPC分类号： H05B3/68 ,  F26B3/30 ,  C23C16/00

CPC分类号： H01L21/67109 ,  H01L21/67115 ,  H01L21/67248

摘要： Apparatus and methods for achieving uniform heating or cooling of a substrate during a rapid thermal process are disclosed. More particularly, apparatus and methods for controlling the temperature of an edge ring supporting a substrate and/or a reflector plate during a rapid thermal process to improve temperature uniformity across the substrate are disclosed, which include a thermal mass or plate adjacent the edge ring to heat or cool the edge ring.

摘要翻译： 公开了用于在快速热处理期间实现基板的均匀加热或冷却的装置和方法。 更具体地，公开了用于在快速热处理期间控制支撑衬底和/或反射板的边缘环的温度以改善衬底上的温度均匀性的装置和方法，其包括邻近边缘环到 加热或冷却边缘环。