公开(公告)号：US20130154949A1

公开(公告)日：2013-06-20

申请号：US13326713

申请日：2011-12-15

申请人： Abbas Jamshidi Roudbari ,  Young-Bae Park ,  Shih-Chang Chang

发明人： Abbas Jamshidi Roudbari ,  Young-Bae Park ,  Shih-Chang Chang

IPC分类号： G06F3/041 ,  G02F1/1335 ,  G02F1/1368 ,  G02F1/1339

CPC分类号： G02F1/1339 ,  G02F2202/023 ,  G06F3/041 ,  G06F2203/04103 ,  G06F2203/04113

摘要： An electronic device may have a display such as a liquid crystal display. The display may include a layer of liquid crystal material interposed between a color filter layer and a thin-film transistor layer. The thin-film transistor layer may be provided with capacitive touch sensor electrodes. Wide metal lines on the thin-film transistor layer may be used to inhibit parasitic capacitances during touch sensor mode. The color filter layer may include a layer of black masking material that surrounds the active display area. A light-curable adhesive may used to attach the color filter layer to the thin-film transistor layer. Openings may be formed in the black masking material and in the metal lines on the thin-film transistor layer. The adhesive may be cured by applying ultraviolet light to the adhesive through the openings in the black masking material and through the openings in the metal lines.

摘要翻译： 电子设备可以具有诸如液晶显示器的显示器。 显示器可以包括插在滤色器层和薄膜晶体管层之间的液晶材料层。 薄膜晶体管层可以设置有电容式触摸传感器电极。 薄膜晶体管层上的宽金属线可以用于抑制触摸传感器模式期间的寄生电容。 滤色器层可以包括围绕有源显示区域的黑色掩蔽材料层。 可以使用光固化粘合剂将滤色器层附着到薄膜晶体管层。 可以在黑色掩模材料和薄膜晶体管层上的金属线中形成开口。 通过将紫外光通过黑色掩蔽材料中的开口并通过金属线中的开口施加紫外光，粘合剂可以固化。

公开(公告)号：US20130021289A1

公开(公告)日：2013-01-24

申请号：US13186238

申请日：2011-07-19

申请人： Wei Chen ,  Steven P. Hotelling ,  John Z. Zhong ,  Shih-Chang Chang ,  Stephen S. Poon

发明人： Wei Chen ,  Steven P. Hotelling ,  John Z. Zhong ,  Shih-Chang Chang ,  Stephen S. Poon

IPC分类号： G06F3/044

CPC分类号： G06F3/044 ,  G06F1/1601 ,  G06F1/1643 ,  G06F3/0412 ,  G06F3/0416 ,  G06F3/047 ,  G06F3/04886 ,  G06F2203/04112 ,  H01L27/323 ,  H01L27/3276 ,  H01L27/3288 ,  H01L27/3293 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5281 ,  H01L51/5284 ,  H01L2251/5338

摘要： Displays such as organic light-emitting diode displays may be provided with touch sensing capabilities. A touch sensor may be formed from electrodes located on a thin-film encapsulation layer or one or more sides of a polarizer. A single-sided or double-sided touch sensor panel may be attached to the upper or lower surface of a polarizer. Control circuitry may be used to provide control signals to light-emitting diodes in the display using a grid of control lines. The control lines and transparent electrode structures such as indium tin oxide structures formed on a thin-film encapsulation layer or polarizer may be used as electrodes for a touch sensor. Displays may have active regions and inactive peripheral portions. The displays may have edge portions that are bent along a bend axis that is within the active region to form a borderless display. Virtual buttons may be formed on the bent edge portions.

摘要翻译： 可以提供诸如有机发光二极管显示器的显示器具有触摸感测能力。 触摸传感器可以由位于薄膜封装层或偏振器的一个或多个侧面上的电极形成。 单面或双面触摸传感器面板可以附接到偏振器的上表面或下表面。 控制电路可以用于使用控制线网格来向显示器中的发光二极管提供控制信号。 控制线和形成在薄膜封装层或偏振片上的铟锡氧化物结构之类的透明电极结构可用作触摸传感器的电极。 显示器可能具有活动区域和不活动的外围部分。 显示器可以具有沿着在有效区域内的弯曲轴线弯曲以形成无边界显示器的边缘部分。 虚拟按钮可以形成在弯曲的边缘部分上。

公开(公告)号：US07916112B2

公开(公告)日：2011-03-29

申请号：US11253374

申请日：2005-10-19

申请人： Du-Zen Peng ,  Shih-Chang Chang

发明人： Du-Zen Peng ,  Shih-Chang Chang

IPC分类号： G09G3/30

CPC分类号： G09G3/3233 ,  G09G3/3266 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/0626

摘要： Systems for controlling pixels are provided. A representative system comprises a scan driver comprises: a data signal line operative to provide data to the pixel; and a scan driver operative to control illumination of the pixel during sequential time periods such that, if data provided by the data signal line is different between a first time period and a second time period, brightness of the pixel differs during a third time period and a sequential fourth time period. The pixel is illuminated during the third time period and the fourth time period.

摘要翻译： 提供了控制像素的系统。 代表性系统包括扫描驱动器，包括：数据信号线，用于向像素提供数据; 以及扫描驱动器，用于在连续时间段期间控制像素的照明，使得如果数据信号线提供的数据在第一时间段和第二时间段之间不同，则在第三时间段期间像素的亮度不同， 连续第四个时间段。 像素在第三时间段和第四时间段期间被照亮。

公开(公告)号：US20100018944A1

公开(公告)日：2010-01-28

申请号：US12179879

申请日：2008-07-25

申请人： Yu-Tsung Lai ,  Shih-Chang Chang ,  Chieh-Ju Wang ,  Jyh-Cherng Yau ,  Jiunn-Hsiung Liao

发明人： Yu-Tsung Lai ,  Shih-Chang Chang ,  Chieh-Ju Wang ,  Jyh-Cherng Yau ,  Jiunn-Hsiung Liao

IPC分类号： H01B13/00

CPC分类号： H01L21/31144 ,  H01L21/0273 ,  H01L21/31116 ,  H01L21/31138

摘要： A patterning method is provided. A patterned photoresist layer is formed on a bottom anti-reflective coating (BARC), having therein an opening exposing a portion of the BARC. The patterned photoresist layer is treated with a first plasma-generating gas including a fluorocarbon species to form a polymer layer on the surface of the PR layer and the sidewall of the opening. The patterned photoresist layer is used as a mask to etch the BARC with a second plasma-generating gas, which includes Ar and H2 but no fluorocarbon species or oxygen-containing species, to remove the exposed portion of the BARC.

摘要翻译： 提供了图案化方法。 在底部抗反射涂层（BARC）上形成图案化的光致抗蚀剂层，其中具有露出BARC的一部分的开口。 图案化的光致抗蚀剂层用包括碳氟化合物种的第一等离子体产生气体处理，以在PR层的表面和开口的侧壁上形成聚合物层。 图案化的光致抗蚀剂层用作掩模以具有第二等离子体产生气体（其包括Ar和H 2，但不含碳氟物质或含氧物质）来蚀刻BARC以去除BARC的暴露部分。

公开(公告)号：US20080129196A1

公开(公告)日：2008-06-05

申请号：US12008530

申请日：2008-01-11

申请人： Yaw-Ming Tsai ,  Hsiu-Chun Hsieh ,  Shih-Chang Chang

发明人： Yaw-Ming Tsai ,  Hsiu-Chun Hsieh ,  Shih-Chang Chang

IPC分类号： H01L27/28 ,  H01L33/00 ,  H01L29/04

CPC分类号： H01L27/322 ,  H01L27/3244 ,  H01L51/56

摘要： A light-emitting device and the fabrication method thereof. A substrate is provided. A plurality of active elements are formed on the substrate, defining a plurality of pixel areas. A color filter is formed on the pixel areas. The surface of the color filter is planarized to reduce roughness. An electrode is formed on the color filter. An light-emitting layer is formed on the electrode. A second electrode is formed on the light-emitting layer.

摘要翻译： 发光元件及其制造方法。 提供基板。 在衬底上形成多个有源元件，限定多个像素区域。 在像素区域上形成滤色器。 将滤色器的表面平坦化以减少粗糙度。 在滤色片上形成电极。 在电极上形成发光层。 在发光层上形成第二电极。

公开(公告)号：US20080036363A1

公开(公告)日：2008-02-14

申请号：US11502243

申请日：2006-08-09

申请人： Du-Zen Peng ,  Shih-Chang Chang ,  Chang-Ho Tseng

发明人： Du-Zen Peng ,  Shih-Chang Chang ,  Chang-Ho Tseng

IPC分类号： H01J1/62 ,  H01J63/04 ,  H01J5/16 ,  H01J61/40

CPC分类号： H05B33/22 ,  H01L27/3269

摘要： Systems for displaying images and fabrication method thereof are provided. A representative system incorporates an electroluminescent device including light emitting units emitting lights with different luminescent intensities along light emitting paths thereof, formed overlying a substrate. And a compensation layer is disposed along the light emitting paths to adjust the different luminescent intensities for outputting substantially uniform light.

摘要翻译： 提供了显示图像的系统及其制造方法。 代表性的系统包括电致发光器件，该电致发光器件包括形成在衬底上的沿其发光路径发射具有不同发光强度的光的发光单元。 并且沿着发光路径设置补偿层以调节用于输出基本上均匀的光的不同发光强度。

公开(公告)号：US07180156B2

公开(公告)日：2007-02-20

申请号：US10954674

申请日：2004-09-30

申请人： Shih-Chang Chang ,  Yaw-Ming Tsai

发明人： Shih-Chang Chang ,  Yaw-Ming Tsai

IPC分类号： H01L29/00

CPC分类号： H01L27/1237 ,  H01L27/1214

摘要： To satisfy the different requirement of TFTs function as peripheral driving circuit and pixel switching device, the modified TFT structure with various thicknesses of gate insulating layers is disclosed. For the peripheral driving circuit, the thinner thickness of the gate-insulating layer is formed, the higher driving ability the TFT performs. However, for the pixel switching device, the thicker thickness of the gate insulating layer is formed, the better reliability the TFT has. The present invention provides a first TFT (peripheral driving circuit) comprising a first gate insulating layer and a second TFT (pixel switching device) comprising a first and second gate insulating layer. Thus, the gate insulating layer of the peripheral driving circuit has a thickness less then that of the pixel switching device.

摘要翻译： 为了满足作为外围驱动电路和像素开关器件的TFT的不同要求，公开了具有各种厚度的栅极绝缘层的改进的TFT结构。 对于外围驱动电路，形成栅极绝缘层的厚度越薄，TFT的驱动能力越强。 然而，对于像素开关器件，形成栅极绝缘层的较厚的厚度，TFT具有更好的可靠性。 本发明提供一种第一TFT（外围驱动电路），包括第一栅极绝缘层和包括第一和第二栅极绝缘层的第二TFT（像素开关器件）。 因此，外围驱动电路的栅极绝缘层的厚度小于像素开关器件的厚度。

公开(公告)号：US07145209B2

公开(公告)日：2006-12-05

申请号：US10850980

申请日：2004-05-20

申请人： Shih-Chang Chang ,  De-Hua Deng ,  Chun-Hsiang Fang ,  Yaw-Ming Tsai

发明人： Shih-Chang Chang ,  De-Hua Deng ,  Chun-Hsiang Fang ,  Yaw-Ming Tsai

IPC分类号： H01L29/94 ,  H01L31/062

CPC分类号： H01L27/1214 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645

摘要： A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in which the first doped region is disposed between the channel region and the second doped region. A gate insulating layer formed overlying the active layer has a central region, a shielding region and an extending region. The shielding region is disposed between the central region and the extending region, the central region covers the channel region, the shielding region covers the first doped region, and the extending region covers the second doped region. The shielding region is thicker than the extending region. A gate layer is formed overlying the gate insulating layer, covers the central region and exposes the shielding region and the extending region.

摘要翻译： 具有自对准轻掺杂区域的薄膜晶体管（TFT）及其制造方法。 有源层具有沟道区，第一掺杂区和第二掺杂区，其中第一掺杂区设置在沟道区和第二掺杂区之间。 形成在有源层上的栅极绝缘层具有中心区域，屏蔽区域和延伸区域。 屏蔽区域设置在中心区域和延伸区域之间，中心区域覆盖沟道区域，屏蔽区域覆盖第一掺杂区域，延伸区域覆盖第二掺杂区域。 屏蔽区域比扩展区域厚。 形成覆盖栅极绝缘层的栅极层，覆盖中心区域并使屏蔽区域和延伸区域露出。

公开(公告)号：US20060197441A1

公开(公告)日：2006-09-07

申请号：US11071746

申请日：2005-03-03

申请人： Yaw-Ming Tsai ,  Hsiu-Chun Hsieh ,  Shih-Chang Chang

发明人： Yaw-Ming Tsai ,  Hsiu-Chun Hsieh ,  Shih-Chang Chang

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01L27/3258 ,  H01L27/3246 ,  H01L51/5206

摘要： Array substrates for electroluminescent (EL) devices and methods of forming the same are disclosed. The array substrates for electroluminescent (EL) devices include a substrate with at least one thin film transistor formed thereon, covered by a planarization layer. A first dielectric passivation layer with a contact hole therein covers parts of the planarization layer and exposes a source/drain electrode of the thin film transistor. A transparent electrode covers a portion of the first electric passivation layer and fills the contact hole, and is partly exposed by a patterned second dielectric passivation formed thereon. A plurality of spacers covers a portion of the second dielectric passivation layer to define an organic electroluminescent area with an exposed transparent electrode. An organic electroluminescent layer covers the exposed transparent electrode, and an electrode covers the organic electroluminescent layer.

摘要翻译： 公开了用于电致发光（EL）器件的阵列衬底及其形成方法。 用于电致发光（EL）器件的阵列衬底包括其上形成有由平坦化层覆盖的至少一个薄膜晶体管的衬底。 具有接触孔的第一介电钝化层覆盖平坦化层的部分并且暴露薄膜晶体管的源极/漏极。 透明电极覆盖第一电钝化层的一部分并填充接触孔，并且通过形成在其上的图案化的第二介电钝化部分地露出。 多个间隔物覆盖第二电介质钝化层的一部分以限定具有暴露的透明电极的有机电致发光区域。 有机电致发光层覆盖暴露的透明电极，电极覆盖有机电致发光层。

公开(公告)号：US07033902B2

公开(公告)日：2006-04-25

申请号：US10947210

申请日：2004-09-23

申请人： Shih-Chang Chang ,  De-Hua Deng ,  Yaw-Ming Tsai

发明人： Shih-Chang Chang ,  De-Hua Deng ,  Yaw-Ming Tsai

IPC分类号： H01L21/331 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/78621

摘要： A method for making a thin film transistor (TFT) with a lightly doped region. The process of the invention is compatible with the currently common TFT manufacturing processes. A substrate with a photoresist layer thereon is subjected to two-step exposure with different exposure energies to form a full-through pattern and a non-through pattern after development. The same photoresist layer is subjected to two etching steps to form a gate region and an intra-gate region. The gate region and the intra-gate region are respectively doped with different dopant concentrations. Therefore, the number of times forming and exposing the photoresist layer is reduced.

摘要翻译： 一种制造具有轻掺杂区域的薄膜晶体管（TFT）的方法。 本发明的方法与当前常见的TFT制造工艺兼容。 对其上具有光致抗蚀剂层的基片进行不同曝光能量的两步曝光，以在显影后形成全通图案和非贯穿图案。 对相同的光致抗蚀剂层进行两个蚀刻步骤以形成栅极区域和栅极内区域。 栅极区域和栅极间区域分别掺杂有不同的掺杂剂浓度。 因此，光致抗蚀剂层的形成和曝光次数减少。