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公开(公告)号：US5985522A
公开(公告)日：1999-11-16
申请号：US947100
申请日：1997-10-08
IPC分类号： C07C62/38 , C07C69/73 , C08F20/26 , C08F20/28 , C09D133/04 , C09D133/14 , G03F7/004 , G03F7/029 , G03F7/033 , G03F7/039 , H01L21/027 , G03C5/00
CPC分类号： C08F20/28 , G03F7/0045 , G03F7/039
摘要： There is provided a photoresist including (a) a resin composed of a polymer having a compound represented with the following general formula [1] within a structural unit thereof, and (b) a photo acid generator. ##STR1## wherein R.sup.1 represents a hydrogen atom, R.sup.2 represents a divalent hydrocarbon group including a bridged cyclic hydrocarbon group and having a carbon number in the range of 7 to 13 both inclusive, R.sup.3 and R.sup.4 represent a hydrocarbon group having a carbon number of 1 or 2, and R.sup.5 represents one of (a) a hydrocarbon group having a carbon number of 1 to 12, (b) a hydrocarbon group having a carbon number of 1 to 12 and replaced with an alkoxy group having a carbon number of 1 to 12, and (c) a hydrocarbon group having a carbon number of 1 to 12 and replaced with an acyl group having a carbon number of 1 to 13. The above mentioned photoresist produces no extra polymer by side reaction. Thus, the photoresist makes it possible to form a fine pattern without resist residue, and has superior thermal stability.
摘要翻译： 提供一种光致抗蚀剂，其包含（a）在其结构单元内由具有由以下通式[1]表示的化合物的聚合物构成的树脂，和（b）光酸产生剂。 其中，R1表示氢原子，R2表示碳原子数为7〜13的碳原子数为2〜20的碳原子数为2〜20的二价烃基，碳原子数为1〜2的烃基， R5表示（a）碳数为1〜12的烃基，（b）碳数为1〜12的烃基，碳原子数为1〜12的烷氧基取代的烃基， （c）碳原子数为1〜12的烃基，碳原子数为1〜13的酰基取代。上述光致抗蚀剂通过副反应不产生额外的聚合物。 因此，光致抗蚀剂使得可以形成没有抗蚀剂残留物的精细图案，并且具有优异的热稳定性。
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公开(公告)号：US5770346A
公开(公告)日：1998-06-23
申请号：US763055
申请日：1996-12-10
IPC分类号： C07C62/38 , C07C69/73 , C08F20/26 , C08F20/28 , C09D133/04 , C09D133/14 , G03F7/004 , G03F7/029 , G03F7/033 , G03F7/039 , H01L21/027
CPC分类号： C08F20/28 , G03F7/0045 , G03F7/039
摘要： There is provided a photoresist including (a) a resin composed of a polymer having a compound represented with the following general formula �1! within a structural unit thereof, and (b) a photo acid generator. ##STR1## wherein R.sup.1 represents a hydrogen atom, R.sup.2 represents a divalent hydrocarbon group including a bridged cyclic hydrocarbon group and having a carbon number in the range of 7 to 13 both inclusive, R.sup.3 and R.sup.4 represent a hydrocarbon group having a carbon number of 1 or 2, and R.sup.5 represents one of (a) a hydrocarbon group having a carbon number of 1 to 12, (b) a hydrocarbon group having a carbon number of 1 to 12 and replaced with an alkoxy group having a carbon number of 1 to 12, and (c) a hydrocarbon group having a carbon number of 1 to 12 and replaced with an acyl group having a carbon number of 1 to 13. The above mentioned photoresist produces no extra polymer by side reaction. Thus, the photoresist makes it possible to form a fine pattern without resist residue, and has superior thermal stability.
摘要翻译： 提供一种光致抗蚀剂，其包含（a）在其结构单元内由具有由以下通式[1]表示的化合物的聚合物构成的树脂，和（b）光酸产生剂。 其中，R1表示氢原子，R2表示碳原子数为7〜13的碳原子数为2的烃基，R3表示碳原子数为4的碳原子数为4的烃基， 数1或2，R5代表（a）碳数为1至12的烃基，（b）碳数为1至12的烃基，并被碳数为烷氧基取代 为1〜12，（c）碳数为1〜12的烃基，碳原子数为1〜13的酰基所取代。上述光致抗蚀剂通过副反应不产生额外的聚合物。 因此，光致抗蚀剂使得可以形成没有抗蚀剂残留物的精细图案，并且具有优异的热稳定性。
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3.发明授权Photoresist, compounds for composing the photoresist, and method of forming pattern by using the photoresist 失效光致抗蚀剂，用于构成光致抗蚀剂的化合物，以及通过使用光致抗蚀剂形成图案的方法
公开(公告)号：US5994025A
公开(公告)日：1999-11-30
申请号：US763054
申请日：1996-12-10
IPC分类号： C08F220/04 , C08F220/06 , C08F220/10 , C08F220/18 , C08F220/26 , C08F220/28 , C09D133/04 , C09D133/14 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/11 , Y10S430/111
摘要： There is provided a photoresist including (a) a resin composed of a polymer represented with the following general formula [1], and (b) a photo acid generator which produces acid when exposed to a light: ##STR1## wherein each of R.sup.1, R.sup.3 and R.sup.7 represents one of a hydrogen atom and a methyl group, R.sup.2 represents a hydrocarbon group including a bridged cyclic hydrocarbon group and having a carbon number in the range of 7 to 13 both inclusive, R.sup.4 represents one of a hydrogen atom and a hydrocarbon group having a carbon number of 1 or 2, R.sup.5 represents a hydrocarbon group having a carbon number of 1 or 2, R.sup.6 represents one of (a) a hydrocarbon group having a carbon number in the range of 1 to 12 both inclusive, (b) a hydrocarbon group having a carbon number in the range of 1 to 12 both inclusive and replaced with an alkoxy group having a carbon number in the range of 1 to 12 both inclusive, and (c) a hydrocarbon group having a carbon number in the range of 1 to 12 both inclusive and replaced with an acyl group having a carbon number in the range of 1 to 13 both inclusive, x+y+z=1, x is in the range of 0.1 to 0.9, y is in the range of 0.1 to 0.7, and z is in the range of 0 to 0.7. The resin has a weight percent in the range of 75 to 99.8 both inclusive, and the photo acid generator has a weight percent in the range of 0.2 to 25 both inclusive. The above mentioned photoresist produces no extra polymer by side reaction. Thus, the photoresist has high resolution to thereby make it possible to form a fine pattern without resist residue.
摘要翻译： 提供了包含（a）由以下通式[1]表示的聚合物构成的树脂的光致抗蚀剂，（b）暴露于光时产生酸的光酸产生剂：其中R1，R3和R7 表示氢原子和甲基中的一个，R 2表示包含桥连环烃基并且碳数为7〜13的碳原子的烃基，R4表示氢原子和具有 碳原子数1或2，R 5表示碳数为1或2的烃基，R 6表示（a）碳原子数为1〜12的烃基，（b）烃 碳数为1〜12的碳原子数为2〜12的碳原子数为2〜12的烷氧基，（c）碳数为1以上的烃基 到12，并用a替代 碳原子数为1〜13的碳原子，x + y + z = 1，x在0.1〜0.9的范围内，y在0.1〜0.7的范围内，z在范围 为0〜0.7。 树脂的重量百分比在75〜99.8之间，光酸产生剂的重量百分比在0.2〜25的范围内。 上述光致抗蚀剂通过副反应不产生额外的聚合物。 因此，光致抗蚀剂具有高分辨率，从而可以形成没有抗蚀剂残留物的精细图案。
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公开(公告)号：US5665518A
公开(公告)日：1997-09-09
申请号：US588607
申请日：1996-01-19
申请人： Katsumi Maeda , Kaichiro Nakano , Takeshi Ohfuji , Etsuo Hasegawa
发明人： Katsumi Maeda , Kaichiro Nakano , Takeshi Ohfuji , Etsuo Hasegawa
IPC分类号： C07C61/35 , C07C69/00 , C07C69/753 , C07C69/757 , C07D307/20 , C07D309/10 , C07D309/12 , C08F20/26 , C08F20/28 , C08K5/00 , C08L33/04 , C08L33/14 , G03F7/004 , G03F7/039 , H01L21/027 , C07C69/54
CPC分类号： C07C69/00 , C07C69/753 , C07D307/20 , C07D309/10 , C08F20/28 , G03F7/0045 , G03F7/039 , C07C2103/00
摘要： The present invention provides a vinylmonomer represented with the following general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a dihydric, bridged cyclic hydrocarbon group having a carbon number in the range of 7 to 13 both inclusive, R.sup.3 represents a group to be decomposed by acid or a hydrogen atom, X represents an alkylene group or a coupling group composed of an oxygen-carbon bond, and Y represents an alkylene group or a coupling group composed of a carbon-carbon bond. A photoresist obtained by polymerizing a monomer in accordance with the invention has a high transparency to FUV having a wavelength of at greatest 220 nm, high sensitivity and resolution to FUV, and a high dry etching resistance, and hence is suitable for exposure light such as FUV having a wavelength of at greatest 220 nm and, in particular, ArF excimer laser. The photoresist makes it possible to carry out fine patterning required for the fabrication of a semiconductor element.
摘要翻译： 本发明提供由以下通式（I）表示的乙烯基单体：om或甲基，R 2表示碳原子数为7〜13的二羟基桥连环状烃基，其中R3表示 被酸或氢原子分解，X表示亚烷基或由氧 - 碳键组成的偶合基团，Y表示亚烷基或由碳 - 碳键组成的偶合基团。 通过使根据本发明的单体聚合而获得的光致抗蚀剂对波长为最大220nm，对FUV的高灵敏度和分辨率以及高耐干蚀刻性的FUV具有高透明度，因此适用于曝光光 具有波长最大为220nm的FUV，特别是ArF准分子激光。 光致抗蚀剂使得可以进行制造半导体元件所需的精细图案。
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公开(公告)号：US07045260B2
公开(公告)日：2006-05-16
申请号：US10831563
申请日：2004-04-23
摘要： A system and method are described for modifying an exposure image in a radiation sensitive layer by treating the exposure image with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may comprise providing different portions of the exposure feature, such as different exposure features or critical dimensions, with different thermal fluxes from a thermal modification system, such as a post exposure bake oven or hot plate configured to provide different thermal fluxes. The thermal modification system may comprise one or more adjustable spacers to adjust a radiant energy flux from a thermal energy source to the radiation sensitive layer by adjusting a separation distance between the source and the layer.
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公开(公告)号：US06801295B2
公开(公告)日：2004-10-05
申请号：US10138864
申请日：2002-05-03
申请人： Hiroyuki Inomata , Osamu Katada , Masa-aki Kurihara , Takeshi Ohfuji , Shiho Sasaki , Michiro Takano
发明人： Hiroyuki Inomata , Osamu Katada , Masa-aki Kurihara , Takeshi Ohfuji , Shiho Sasaki , Michiro Takano
IPC分类号： G03B2700
摘要： A system and method are described for modifying an exposure image in a radiation sensitive layer with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may include providing different thermal flux to different regions of the radiation sensitive layer to concurrently create different temperatures in those regions. The different temperatures may cause different physicochemical transformation of the regions that may be used to reduce critical dimension errors in those regions. A post exposure bake hot plate may be configured to provide heterogeneous radiant energy flux to a radiation sensitive layer by providing adjustable spacers that adjust a separation distance between the hot plate and the layer. The adjustable spacers may be adjusted prior to exposure image modification by using an adjustment plate having openings to provide access to and adjustment of the adjustable spacers.
摘要翻译： 描述了用于修改具有异质和不均匀的后曝光热处理的辐射敏感层中的曝光图像的系统和方法。 处理可以包括向辐射敏感层的不同区域提供不同的热通量，以在这些区域中同时产生不同的温度。 不同的温度可能导致可能用于减少那些区域的关键尺寸误差的区域的不同物理化学转化。 后曝光烘烤热板可以被配置为通过提供调节热板和层之间的间隔距离的可调隔离物来向辐射敏感层提供异质辐射能通量。 可以通过使用具有开口的调节板来提供对可调节间隔件的接近和调节的可调节间隔件在曝光图像修改之前进行调整。
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公开(公告)号：US07045259B2
公开(公告)日：2006-05-16
申请号：US09965280
申请日：2001-09-26
IPC分类号： G03C5/00
摘要： A system and method are described for modifying an exposure image in a radiation sensitive layer by treating the exposure image with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may comprise providing different portions of the exposure feature, such as different exposure features or critical dimensions, with different thermal fluxes from a thermal modification system, such as a post exposure bake oven or hot plate configured to provide different thermal fluxes. The thermal modification system may comprise one or more adjustable spacers to adjust a radiant energy flux from a thermal energy source to the radiation sensitive layer by adjusting a separation distance between the source and the layer.
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