摘要:
There is provided a photoresist including (a) a resin composed of a polymer having a compound represented with the following general formula [1] within a structural unit thereof, and (b) a photo acid generator. ##STR1## wherein R.sup.1 represents a hydrogen atom, R.sup.2 represents a divalent hydrocarbon group including a bridged cyclic hydrocarbon group and having a carbon number in the range of 7 to 13 both inclusive, R.sup.3 and R.sup.4 represent a hydrocarbon group having a carbon number of 1 or 2, and R.sup.5 represents one of (a) a hydrocarbon group having a carbon number of 1 to 12, (b) a hydrocarbon group having a carbon number of 1 to 12 and replaced with an alkoxy group having a carbon number of 1 to 12, and (c) a hydrocarbon group having a carbon number of 1 to 12 and replaced with an acyl group having a carbon number of 1 to 13. The above mentioned photoresist produces no extra polymer by side reaction. Thus, the photoresist makes it possible to form a fine pattern without resist residue, and has superior thermal stability.
摘要:
There is provided a photoresist including (a) a resin composed of a polymer having a compound represented with the following general formula �1! within a structural unit thereof, and (b) a photo acid generator. ##STR1## wherein R.sup.1 represents a hydrogen atom, R.sup.2 represents a divalent hydrocarbon group including a bridged cyclic hydrocarbon group and having a carbon number in the range of 7 to 13 both inclusive, R.sup.3 and R.sup.4 represent a hydrocarbon group having a carbon number of 1 or 2, and R.sup.5 represents one of (a) a hydrocarbon group having a carbon number of 1 to 12, (b) a hydrocarbon group having a carbon number of 1 to 12 and replaced with an alkoxy group having a carbon number of 1 to 12, and (c) a hydrocarbon group having a carbon number of 1 to 12 and replaced with an acyl group having a carbon number of 1 to 13. The above mentioned photoresist produces no extra polymer by side reaction. Thus, the photoresist makes it possible to form a fine pattern without resist residue, and has superior thermal stability.
摘要:
There is provided a photoresist including (a) a resin composed of a polymer represented with the following general formula [1], and (b) a photo acid generator which produces acid when exposed to a light: ##STR1## wherein each of R.sup.1, R.sup.3 and R.sup.7 represents one of a hydrogen atom and a methyl group, R.sup.2 represents a hydrocarbon group including a bridged cyclic hydrocarbon group and having a carbon number in the range of 7 to 13 both inclusive, R.sup.4 represents one of a hydrogen atom and a hydrocarbon group having a carbon number of 1 or 2, R.sup.5 represents a hydrocarbon group having a carbon number of 1 or 2, R.sup.6 represents one of (a) a hydrocarbon group having a carbon number in the range of 1 to 12 both inclusive, (b) a hydrocarbon group having a carbon number in the range of 1 to 12 both inclusive and replaced with an alkoxy group having a carbon number in the range of 1 to 12 both inclusive, and (c) a hydrocarbon group having a carbon number in the range of 1 to 12 both inclusive and replaced with an acyl group having a carbon number in the range of 1 to 13 both inclusive, x+y+z=1, x is in the range of 0.1 to 0.9, y is in the range of 0.1 to 0.7, and z is in the range of 0 to 0.7. The resin has a weight percent in the range of 75 to 99.8 both inclusive, and the photo acid generator has a weight percent in the range of 0.2 to 25 both inclusive. The above mentioned photoresist produces no extra polymer by side reaction. Thus, the photoresist has high resolution to thereby make it possible to form a fine pattern without resist residue.
摘要翻译:提供了包含(a)由以下通式[1]表示的聚合物构成的树脂的光致抗蚀剂,(b)暴露于光时产生酸的光酸产生剂:其中R1,R3和R7 表示氢原子和甲基中的一个,R 2表示包含桥连环烃基并且碳数为7〜13的碳原子的烃基,R4表示氢原子和具有 碳原子数1或2,R 5表示碳数为1或2的烃基,R 6表示(a)碳原子数为1〜12的烃基,(b)烃 碳数为1〜12的碳原子数为2〜12的碳原子数为2〜12的烷氧基,(c)碳数为1以上的烃基 到12,并用a替代 碳原子数为1〜13的碳原子,x + y + z = 1,x在0.1〜0.9的范围内,y在0.1〜0.7的范围内,z在范围 为0〜0.7。 树脂的重量百分比在75〜99.8之间,光酸产生剂的重量百分比在0.2〜25的范围内。 上述光致抗蚀剂通过副反应不产生额外的聚合物。 因此,光致抗蚀剂具有高分辨率,从而可以形成没有抗蚀剂残留物的精细图案。
摘要:
The present invention provides a vinylmonomer represented with the following general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a dihydric, bridged cyclic hydrocarbon group having a carbon number in the range of 7 to 13 both inclusive, R.sup.3 represents a group to be decomposed by acid or a hydrogen atom, X represents an alkylene group or a coupling group composed of an oxygen-carbon bond, and Y represents an alkylene group or a coupling group composed of a carbon-carbon bond. A photoresist obtained by polymerizing a monomer in accordance with the invention has a high transparency to FUV having a wavelength of at greatest 220 nm, high sensitivity and resolution to FUV, and a high dry etching resistance, and hence is suitable for exposure light such as FUV having a wavelength of at greatest 220 nm and, in particular, ArF excimer laser. The photoresist makes it possible to carry out fine patterning required for the fabrication of a semiconductor element.
摘要:
A system and method are described for modifying an exposure image in a radiation sensitive layer by treating the exposure image with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may comprise providing different portions of the exposure feature, such as different exposure features or critical dimensions, with different thermal fluxes from a thermal modification system, such as a post exposure bake oven or hot plate configured to provide different thermal fluxes. The thermal modification system may comprise one or more adjustable spacers to adjust a radiant energy flux from a thermal energy source to the radiation sensitive layer by adjusting a separation distance between the source and the layer.
摘要:
A system and method are described for modifying an exposure image in a radiation sensitive layer with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may include providing different thermal flux to different regions of the radiation sensitive layer to concurrently create different temperatures in those regions. The different temperatures may cause different physicochemical transformation of the regions that may be used to reduce critical dimension errors in those regions. A post exposure bake hot plate may be configured to provide heterogeneous radiant energy flux to a radiation sensitive layer by providing adjustable spacers that adjust a separation distance between the hot plate and the layer. The adjustable spacers may be adjusted prior to exposure image modification by using an adjustment plate having openings to provide access to and adjustment of the adjustable spacers.
摘要:
A system and method are described for modifying an exposure image in a radiation sensitive layer by treating the exposure image with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may comprise providing different portions of the exposure feature, such as different exposure features or critical dimensions, with different thermal fluxes from a thermal modification system, such as a post exposure bake oven or hot plate configured to provide different thermal fluxes. The thermal modification system may comprise one or more adjustable spacers to adjust a radiant energy flux from a thermal energy source to the radiation sensitive layer by adjusting a separation distance between the source and the layer.