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    MEMORY DEVICE AND METHOD FOR MANUFACTURING MEMORY DEVICE
    1.
    发明申请
    MEMORY DEVICE AND METHOD FOR MANUFACTURING MEMORY DEVICE 审中-公开
    用于制造存储器件的存储器件和方法

    公开(公告)号：US20130299884A1

    公开(公告)日：2013-11-14

    申请号：US13468797

    申请日：2012-05-10

    Applicant: Shian Jyh Lin ,  Jen Jui Huang

    Inventor： Shian Jyh Lin ,  Jen Jui Huang

    IPC: H01L29/772 ,  H01L21/02

    CPC classification number: H01L21/76224 ,  H01L27/10876 ,  H01L27/10891

    Abstract: A memory device includes a substrate, first and second trench isolations, a plurality of line-type isolations, a first word line, and a second word line. The substrate comprises an active area having source and drain regions. The first and second trench isolations extend parallel to each other. The line-type isolations define the active area together with the first and second trench isolations. The first word line extends across the active area and is formed in the substrate adjacent to the first trench isolation defining a first segment of the active area with the first trench isolation. The second word line extends across the active area and is formed in the substrate adjacent to the second trench isolation defining a second segment of the active area with the second trench isolation. The size of the first segment is substantially equal to the size of the second segment.

    Abstract translation: 存储器件包括衬底，第一和第二沟槽隔离，多个线型隔离，第一字线和第二字线。 衬底包括具有源区和漏区的有源区。 第一和第二沟槽隔离物彼此平行延伸。 线型隔离定义了有源区以及第一和第二沟槽隔离。 第一字线延伸穿过有效区域，并且形成在邻近第一沟槽隔离物的衬底中，限定具有第一沟槽隔离的有源区域的第一段。 第二字线延伸穿过有效区域并且形成在与第二沟槽隔离件相邻的衬底中，限定具有第二沟槽隔离的有源区域的第二段。 第一段的大小基本上等于第二段的大小。

    MEMORY DEVICE AND METHOD OF MANUFACTURING MEMORY STRUCTURE
    2.
    发明申请
    MEMORY DEVICE AND METHOD OF MANUFACTURING MEMORY STRUCTURE 审中-公开
    存储器件和制造存储器结构的方法

    公开(公告)号：US20140036565A1

    公开(公告)日：2014-02-06

    申请号：US13565289

    申请日：2012-08-02

    Applicant: Shian Jyh LIN ,  Jen Jui Huang

    Inventor： Shian Jyh LIN ,  Jen Jui Huang

    IPC: H01L21/768 ,  G11C5/06

    CPC classification number: H01L27/1052 ,  H01L21/3086 ,  H01L21/3088 ,  H01L27/10891

    Abstract: An exemplary memory device includes a substrate and two word lines extending on the substrate. The substrate includes an active area. The two word lines are formed on the active area. Each word line includes a recessed portion corresponding to the active area. The recessed portion is defined by a planar top surface.

    Abstract translation: 示例性存储器件包括衬底和在衬底上延伸的两个字线。 基板包括有源区。 两个字线形成在有源区上。 每个字线包括对应于有效区域的凹部。 凹部由平坦的顶面限定。

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