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    MEMORY CELL SUPPORT LATTICE
    1.
    发明申请
    MEMORY CELL SUPPORT LATTICE 有权
    记忆体支持实验室

    公开(公告)号：US20140054745A1

    公开(公告)日：2014-02-27

    申请号：US13590791

    申请日：2012-08-21

    Applicant: Zhimin Song ,  Che-Chi Lee ,  Brett Busch

    Inventor： Zhimin Song ,  Che-Chi Lee ,  Brett Busch

    IPC: H01L27/108 ,  H01L21/8242

    CPC classification number: H01L27/10852 ,  H01L21/02266 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/10814 ,  H01L27/10817 ,  H01L28/91

    Abstract: Memory cell support lattices and methods of forming the same are described herein. As an example, a method of forming a memory cell support lattice includes forming a mask on a number of capacitor elements in an array, such that a space between vertically and horizontally adjacent capacitor elements is fully covered and a space between diagonally adjacent capacitor elements is partially covered and forming a support lattice in a support material by etching the support material to remove portions of the support material below the openings in the mask.

    Abstract translation: 本文描述了记忆单元支撑晶格及其形成方法。 作为示例，形成存储单元支撑晶格的方法包括在阵列中的多个电容器元件上形成掩模，使得垂直和水平相邻的电容器元件之间的空间被完全覆盖，并且对角相邻的电容器元件之间的空间是 部分地覆盖并通过蚀刻支撑材料在支撑材料中形成支撑格架，以将掩模中开口下方的支撑材料的部分去除。

    Methods of forming a plurality of capacitors
    2.
    发明授权
    Methods of forming a plurality of capacitors 有权

    公开(公告)号：US08518788B2

    公开(公告)日：2013-08-27

    申请号：US12854446

    申请日：2010-08-11

    Applicant: Che-Chi Lee

    Inventor： Che-Chi Lee

    IPC: H01L21/20

    CPC classification number: H01L28/40 ,  H01L27/0207 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10894 ,  H01L27/10897 ,  H01L28/87 ,  H01L28/88 ,  H01L28/92

    Abstract: A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes, an elevationally inner insulative retaining material received laterally about the capacitor electrodes, an elevationally outer insulative retaining material received laterally about the capacitor electrodes, a first material received laterally about the capacitor electrodes elevationally inward of the inner insulative retaining material, and a second material received laterally about the capacitor electrodes elevationally between the inner and outer insulative retaining materials. Openings are anisotropically etched to extend through the outer insulative retaining material and the second material. After the anisotropic etching, remaining of the second material is isotropically etched through the openings from being received laterally about the capacitor electrodes between the inner and outer insulative retaining materials. The isotropic etching of the second material is conducted selectively relative to the capacitor electrodes and the inner and outer insulative retaining materials. The capacitor electrodes are ultimately incorporated into a plurality of capacitors.

    METHODS OF FORMING A PLURALITY OF CAPACITORS
    3.
    发明申请
    METHODS OF FORMING A PLURALITY OF CAPACITORS 有权
    形成大量电容器的方法

    公开(公告)号：US20120040507A1

    公开(公告)日：2012-02-16

    申请号：US12854446

    申请日：2010-08-11

    Applicant: Che-Chi Lee

    Inventor： Che-Chi Lee

    IPC: H01L21/02

    CPC classification number: H01L28/40 ,  H01L27/0207 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10894 ,  H01L27/10897 ,  H01L28/87 ,  H01L28/88 ,  H01L28/92

    Abstract: A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes, an elevationally inner insulative retaining material received laterally about the capacitor electrodes, an elevationally outer insulative retaining material received laterally about the capacitor electrodes, a first material received laterally about the capacitor electrodes elevationally inward of the inner insulative retaining material, and a second material received laterally about the capacitor electrodes elevationally between the inner and outer insulative retaining materials. Openings are anisotropically etched to extend through the outer insulative retaining material and the second material. After the anisotropic etching, remaining of the second material is isotropically etched through the openings from being received laterally about the capacitor electrodes between the inner and outer insulative retaining materials. The isotropic etching of the second material is conducted selectively relative to the capacitor electrodes and the inner and outer insulative retaining materials. The capacitor electrodes are ultimately incorporated into a plurality of capacitors.

    Abstract translation: 形成多个电容器的方法包括提供多个电容器电极，围绕电容器电极横向接收的垂直内部绝缘保持材料，围绕电容器电极横向接收的垂直外绝缘保持材料，围绕电容器横向接收的第一材料 内绝缘保持材料的电极向内垂直的电极，以及在内绝缘保持材料和外绝缘保持材料之间的电容器电极横向接收的第二材料。 开口各向异性地蚀刻以延伸穿过外绝缘保持材料和第二材料。 在各向异性蚀刻之后，第二材料的剩余部分通过开口进行各向同性蚀刻，从而在内绝缘保持材料和外绝缘保持材料之间围绕电容器电极横向接收。 第二材料的各向同性蚀刻相对于电容器电极和内外绝缘保持材料选择性地进行。 电容器电极最终并入多个电容器中。

    Memory cell support lattice
    4.
    发明授权
    Memory cell support lattice 有权
    存储单元支持格

    公开(公告)号：US09184167B2

    公开(公告)日：2015-11-10

    申请号：US13590791

    申请日：2012-08-21

    Applicant: Zhimin Song ,  Che-Chi Lee ,  Brett Busch

    Inventor： Zhimin Song ,  Che-Chi Lee ,  Brett Busch

    IPC: H01L27/108 ,  H01L21/8242 ,  H01L49/02

    CPC classification number: H01L27/10852 ,  H01L21/02266 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/10814 ,  H01L27/10817 ,  H01L28/91

    Abstract: Memory cell support lattices and methods of forming the same are described herein. As an example, a method of forming a memory cell support lattice includes forming a mask on a number of capacitor elements in an array, such that a space between vertically and horizontally adjacent capacitor elements is fully covered and a space between diagonally adjacent capacitor elements is partially covered and forming a support lattice in a support material by etching the support material to remove portions of the support material below the openings in the mask.

    Abstract translation: 本文描述了记忆单元支撑晶格及其形成方法。 作为示例，形成存储单元支撑晶格的方法包括在阵列中的多个电容器元件上形成掩模，使得垂直和水平相邻的电容器元件之间的空间被完全覆盖，并且对角相邻的电容器元件之间的空间是 部分地覆盖并通过蚀刻支撑材料在支撑材料中形成支撑格架，以将掩模中开口下方的支撑材料的部分去除。

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