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公开(公告)号：US11949398B2
公开(公告)日：2024-04-02
申请号：US17992439
申请日：2022-11-22
发明人： Guojun Weng , Jian Wang
CPC分类号： H03H9/02086 , H03H3/02 , H03H9/0504 , H03H9/133
摘要： A semiconductor device is provided. The semiconductor device incudes: a first sub-semiconductor structure including a dielectric layer; and a second sub-semiconductor structure, at least including a carrier substrate, and being bonded to the first sub-semiconductor structure. The first sub-semiconductor structure or the second sub-semiconductor structure includes a charge accumulation preventing layer, and the charge accumulation preventing layer is disposed between the carrier substrate and the dielectric layer, and is configured to avoid an undesired conductive channel from being generated due to charge accumulation on a surface of the carrier substrate.
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公开(公告)号：US11699987B2
公开(公告)日：2023-07-11
申请号：US18056808
申请日：2022-11-18
发明人： Guojun Weng
CPC分类号： H03H9/173 , H03H9/02031 , H03H9/13
摘要： A bulk acoustic wave (BAW) resonator includes a substrate, a piezoelectric layer disposed above the substrate, a first electrode disposed below the piezoelectric layer, a second electrode disposed above the piezoelectric layer, a first dielectric layer, a second dielectric layer, and a third dielectric layer disposed between the substrate and the piezoelectric layer, and a bonding layer disposed between the third dielectric layer and the substrate. The first dielectric layer is disposed below the piezoelectric layer and includes a cavity. The third dielectric layer is disposed below the first dielectric layer and includes a protruding structure protruding towards the piezoelectric layer. The second dielectric layer overlays the third dielectric layer including the protruding structure, the second dielectric layer and the protruding structure of the third dielectric layer constituting a double-wall boundary structure surrounding the cavity.
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公开(公告)号：US12088271B2
公开(公告)日：2024-09-10
申请号：US17933075
申请日：2022-09-16
发明人： Guojun Weng , Gongbin Tang
IPC分类号： H01L21/306 , C23C14/06 , C23C14/10 , C23C14/48 , C23C14/58 , C23C16/24 , C23C16/34 , C23C16/40 , C23C16/56 , H03H3/08
CPC分类号： H03H3/08 , C23C14/0641 , C23C14/0652 , C23C14/10 , C23C14/48 , C23C14/5873 , C23C16/24 , C23C16/34 , C23C16/345 , C23C16/401 , C23C16/56
摘要： A fabrication method of a surface acoustic wave (SAW) filter includes obtaining a piezoelectric substrate, forming a back electrode on a first portion of the piezoelectric substrate, forming a first dielectric layer on the first portion of the piezoelectric substrate, forming a trench in the first dielectric layer, forming a second dielectric layer on the first dielectric layer formed with the trench, forming a third dielectric layer on the second dielectric layer, removing a second portion of the piezoelectric substrate to obtain a piezoelectric layer, forming an interdigital transducer (IDT) on the piezoelectric layer, and etching and releasing a portion of the first dielectric layer surrounded by the trench to form a cavity below the back electrode.
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公开(公告)号：US11901193B2
公开(公告)日：2024-02-13
申请号：US18315091
申请日：2023-05-10
发明人： Guojun Weng
IPC分类号： H01L21/311 , H01L21/02 , H01L21/762 , H01L21/3065 , H01L21/3105
CPC分类号： H01L21/31122 , H01L21/0214 , H01L21/02164 , H01L21/02178 , H01L21/3065 , H01L21/31053 , H01L21/762
摘要： A method for fabricating a device having a cavity, includes: obtaining a device wafer including a first substrate and a device structure formed on the first substrate, depositing a first dielectric layer on the device wafer, etching the first dielectric layer to expose at least a part of the device structure and a part of the first substrate, depositing, after the etching, a second dielectric layer on the device wafer and the first dielectric layer, performing a surface treatment on a surface of the second dielectric layer, obtaining a second substrate, and bonding the second substrate with the second dielectric layer on the device wafer, thereby forming the cavity between the second substrate and the device wafer.
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公开(公告)号：US12074586B2
公开(公告)日：2024-08-27
申请号：US17933070
申请日：2022-09-16
发明人： Guojun Weng , Gongbin Tang
CPC分类号： H03H9/6423 , H03H3/08 , H03H9/02897 , H03H9/059 , H03H9/1092
摘要： A surface acoustic wave (SAW) filter includes a bottom substrate, a piezoelectric layer disposed above the bottom substrate, the piezoelectric layer having a bottom surface facing the bottom substrate and a top surface opposite to the bottom surface, a lower cavity disposed below the piezoelectric layer, an interdigital transducer (IDT) disposed on the top surface of the piezoelectric layer, and a back electrode disposed on the bottom surface of the piezoelectric layer, and exposed in the lower cavity.
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公开(公告)号：US12022616B2
公开(公告)日：2024-06-25
申请号：US18200230
申请日：2023-05-22
发明人： Guojun Weng , Xiaolong Wang
IPC分类号： H05K1/14 , H01L21/56 , H01L23/00 , H01L23/538 , H01L25/00 , H01L25/065 , H05K1/11 , H05K3/34 , H05K3/40
CPC分类号： H05K1/144 , H01L21/568 , H01L23/5384 , H01L24/16 , H01L25/0655 , H01L25/50 , H05K1/115 , H05K3/34 , H05K3/4038 , H01L2224/16227 , H01L2224/16238 , H05K2201/042 , H05K2201/09036 , H05K2201/09509 , H05K2201/10098 , H05K2201/10674 , H05K2201/10984
摘要： A radio frequency front-end module, a manufacturing method thereof and a communication device are provided. The radio frequency front-end module includes a first base substrate and a metal bonding structure; a second functional substrate, including a second base substrate, a groove in the second base substrate, and a bonding metal layer; and a first radio frequency front-end component, at least partially located in the groove, the first base substrate and the second base substrate are oppositely arranged, and a surface of the second base substrate close to the first base substrate includes a groove surface inside the groove and a substrate surface outside the groove, and the bonding metal layer includes a first metal portion located on the groove surface and a second metal portion located on the substrate surface, the first radio frequency front-end component is at least partially surrounded by the first metal portion.
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公开(公告)号：US11990891B2
公开(公告)日：2024-05-21
申请号：US18130504
申请日：2023-04-04
发明人： Guojun Weng , Gongbin Tang , Jingyong Liu
CPC分类号： H03H9/25 , H03H3/08 , H03H9/02834 , H03H9/64
摘要： A surface acoustic wave resonator structure and a method of forming the resonator structure and a filter are provided. The resonator structure includes: a piezoelectric substrate; an interdigital transducer including a first interdigital electrode structure and a second interdigital electrode structure, wherein the first interdigital electrode structure comprises first interdigital electrodes and a first interdigital electrode lead-out part connected to each other, the second interdigital electrode structure comprises second interdigital electrodes and a second interdigital electrode lead-out part connected to each other, the first interdigital electrodes and the second interdigital electrodes extend along a first direction and are alternately arranged in a second direction; a temperature compensation layer, disposed on a side of the interdigital transducer away from the piezoelectric substrate; and a first protection layer disposed between the interdigital transducer and the temperature compensation layer and configured to protect the interdigital transducer from being oxidized.
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公开(公告)号：US12088282B2
公开(公告)日：2024-09-10
申请号：US18351558
申请日：2023-07-13
发明人： Guojun Weng , Gongbin Tang
CPC分类号： H03H9/6423 , H03H3/08 , H03H9/02897 , H03H9/059 , H03H9/1092
摘要： A surface acoustic wave (SAW) filter includes a bottom substrate, a piezoelectric layer disposed above the bottom substrate, the piezoelectric layer having a bottom surface facing the bottom substrate and a top surface opposite to the bottom surface, a lower cavity disposed below the piezoelectric layer, an interdigital transducer (IDT) disposed on the top surface of the piezoelectric layer, and a back electrode disposed on the bottom surface of the piezoelectric layer, and exposed in the lower cavity.
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公开(公告)号：US11838001B2
公开(公告)日：2023-12-05
申请号：US18074109
申请日：2022-12-02
发明人： Guojun Weng
CPC分类号： H03H3/02 , H01L21/02057 , H01L21/02304 , H01L21/2007 , H03H9/13 , H03H9/173 , H01L21/02496 , H01L2224/11001 , H03H2003/021 , Y10T29/42 , Y10T29/49005
摘要： A bulk acoustic wave resonator and a method of manufacturing the same are provided. The bulk acoustic wave resonator includes: a first carrier substrate; a barrier layer on a main surface of the first carrier substrate and configured to prevent an undesired conductive channel from being generated due to charge accumulation on the main surface; a buffer layer on a side of the barrier layer away from the first carrier substrate; a piezoelectric layer on a side of the buffer layer away from the barrier layer; a first electrode and a second electrode on opposite sides of the piezoelectric layer; a first passivation layer and a second passivation layer, respectively covering sidewalls of the first electrode and the second electrode; a dielectric layer between the first passivation layer and the buffer layer, wherein a first cavity is provided between the first passivation layer and the dielectric layer.
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公开(公告)号：US11777472B2
公开(公告)日：2023-10-03
申请号：US17992170
申请日：2022-11-22
发明人： Guojun Weng , Jian Wang
CPC分类号： H03H9/173 , H03H9/02133 , H03H9/0504 , H03H9/13
摘要： A bulk acoustic wave resonator is provided. The bulk acoustic wave resonator incudes a carrier substrate, having a main surface extending along a first direction; a piezoelectric layer, located on a side of the carrier substrate in a second direction perpendicular to the main surface of the carrier substrate; a first electrode and a second electrode; a cavity boundary structure, having a body part extending along the first direction and a protruding part protruding from the body part toward the piezoelectric layer; a resonant cavity, defined by the cavity boundary structure and the piezoelectric layer; and a periphery dielectric layer, located on a side of the protruding part of the cavity boundary structure away from the resonant cavity, a material of the periphery dielectric layer is different from a material of at least a portion of the protruding part adjacent to the periphery dielectric layer.
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