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公开(公告)号:US09196578B1
公开(公告)日:2015-11-24
申请号:US14459337
申请日:2014-08-14
Applicant: Sheau Mei Lim , Meng Kong Lye , Pei Fan Tong
Inventor: Sheau Mei Lim , Meng Kong Lye , Pei Fan Tong
IPC: H01L23/495
CPC classification number: H01L23/49575 , H01L23/49503 , H01L23/49541 , H01L2224/05554 , H01L2224/49113 , H01L2224/49171
Abstract: A semiconductor package has multiple dies and an interior power bar that extends within an interior space formed within the die flag between the dies. The bond pads located on the interior side of each die are wire-bonded to the interior power bar. Some embodiments may have more than two dies and/or more than one interior power bar between each pair of adjacent dies.
Abstract translation: 半导体封装具有多个管芯和内部电源杆,其在形成在管芯之间的管芯标记内的内部空间内延伸。 位于每个模具的内侧的接合焊盘被引线接合到内部电源杆。 一些实施例可以在每对相邻的模具之间具有多于两个的模具和/或多于一个的内部功率杆。
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公开(公告)号:US20160071789A1
公开(公告)日:2016-03-10
申请号:US14479377
申请日:2014-09-08
Applicant: Pei Fan Tong , Boon Yew Low , Lan Chu Tan
Inventor: Pei Fan Tong , Boon Yew Low , Lan Chu Tan
CPC classification number: H01L23/49827 , H01L21/486 , H01L2224/16227 , H01L2924/15192 , H01L2924/15311 , H05K3/0014 , H05K3/0044 , H05K3/0097 , H05K3/06 , H05K3/4046 , H05K3/4688 , H05K2201/09118 , H05K2201/10242 , H05K2201/10378 , H05K2203/0235
Abstract: A method for forming a pass-through layer of an interposer of a packaged semiconductor device in which conducting structures are extended between first and second ends of a casing. The conducting structures are subsequently encapsulated in a molding compound to form a molded bar, and the molded bar is sliced to obtain the pass-through layer. The pass-through layer has conducting vias, each corresponding to a sliced section of one of the conducting structures. The cost of pass-through layers formed in this manner may be less than that of comparable silicon or glass pass-through layers.
Abstract translation: 一种用于形成封装半导体器件的中介层的贯穿层的方法,其中导电结构在壳体的第一和第二端之间延伸。 然后将导电结构封装在模塑料中以形成模制棒,并将模制棒切片以获得穿透层。 穿通层具有导电孔,每个对应于一个导电结构的切片部分。 以这种方式形成的直通层的成本可能低于可比较的硅或玻璃直通层的成本。
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