摘要:
A multilayer semiconductor laser includes a substrate on which is formed a semiconductor multilayer heterostructure divided into a plurality of electrically pumped regions and an elongated optically pumped region. The electrically pumped regions generate and deliver optical pump radiation laterally into the elongated optically pumped region. Output radiation is generated and delivered by the optically pumped region.
摘要:
A multilayer semiconductor laser includes a substrate on which is formed a semiconductor multilayer heterostructure divided into a plurality of electrically pumped regions and an elongated optically pumped region. The electrically pumped regions generate and delivering optical pump radiation laterally into the elongated optically pumped region. Output radiation is generated and delivered by the optically pumped region.
摘要:
Apparatus for reducing spacing between a plurality of parallel, spaced apart plane-polarized laser-radiation beams delivered by a stack of laser-diode bars includes a ninety degree polarization rotator, and a compound prism including a total reflecting surface an internal polarization-selective surface parallel to each other. The polarization-selective surface is highly transmissive for radiation plane-polarized in one polarization orientation and highly reflective for radiation plane-polarized at ninety degrees to that orientation. The polarization rotator rotates the polarization of a portion of the beams. The beams are transmitted through the compound prism with the portion of polarization-rotated beams following a different path through the prism from that of the beams that are not polarization rotated. The beams exit the prism with spacing therebetween one-half of the spacing between beams entering the prism.
摘要:
Apparatus for projecting a line of light includes a linear array of diode-lasers arranged in a diode-laser bar. The apparatus includes an optical system. Components of the system include a plurality of lenses and array of cylindrical microlenses having the same spacing as diode-lasers in the diode-laser array. The microlens array is spaced at a distance from the diode-laser bar and aligned with the diode-laser bar such that the front focal plane of the microlens array is between the diode-laser bar and the microlens array. The optical system components are configured and arranged to project overlapping elongated images in a predetermined plane. The overlapping images form the line of light. The elongated images are images of cross-sections of beams from the diode-lasers where the beams are intersected by the front focal plane of the microlens array.
摘要:
Two parallel sets of groups of beams from diode laser bars are spaced apart by a distance V. The two sets of beam groups are interleaved by a beam combiner to provide on set of beam groups spaced apart by a distance V/2. The beam combiner includes a plurality of reflective strips in a plane inclined to the direction of propagation of the beam groups. One set of beam groups is transmitted through the beam combiner without being intercepted by the reflective strips. The other set of beam groups is interleaved with the transmitted set of beam groups by reflecting the other set of beam groups from the reflective strips.
摘要:
A semiconductor laser includes a multilayer semiconductor laser heterostructure including at least one active layer of a II-VI semiconductor material and is optically pumped by one or more indium gallium nitride (InGaN) diode-lasers. Group II elements in the II-VI semiconductor material are zinc, cadmium, magnesium, beryllium, strontium, and barium. Group VI elements in the II-VI semiconductor material are Sulfur, Selenium, and Tellurium. In one example of the laser an edge emitting heterostructure includes two active layers of zinc cadmium selenide, two waveguide layers of zinc magnesium sulfoselenide, and two cladding layers, also of zinc magnesium sulfoselenide. Proportions of elements in the cladding layer material and the waveguide layer material are selected such that the waveguide layer material has a higher bandgap than the material of the waveguide layers. In another example, a two dimensional array of InGaN diode-lasers is arranged to optically pump a one dimensional array of II-VI edge-emitting heterostructure lasers.
摘要:
A semiconductor gain-structure functions as a gain-element in a laser-resonator. The gain-structure is bonded to a diamond heat-spreader that is peripherally cooled by a heat-sink configured to allow access to the gain-structure by laser-radiation circulating in the laser-resonator. In one example, the gain-structure is used as a transmissive gain-structure in a traveling-wave ring-resonator. In another example, the gain-structure surmounts a mirror-structure which functions as an end-mirror of a standing-wave laser-resonator.
摘要:
An optical pulse-shaper includes a prism, a delay line having positive optical power and a reflective spatial light modulator. In one arrangement the delay line has a selectively variable optical path length for accommodating pulses of different spectral bandwidth and positive optical power is provided by a concave mirror. In another arrangement, the delay line includes a zoom-mirror arranged to provide selectively variable optical power for accommodating pulses of different spectral bandwidth.
摘要:
An optically pumped semiconductor pumped optical parametric oscillator (OPS-pumped OPO) includes an OPS laser resonator and an OPO resonator A portion the OPS laser resonator axis and the OPO resonator axis are collinear. An optically nonlinear crystal is located in the coaxial portion of the resonators and arranged to frequency divide fundamental radiation generated in the OPS laser resonator into signal and idler radiations. In one arrangement, the OPO laser resonator is also an OPS resonator and is arranged to generate radiation at the wavelength of the signal radiation, with the idler radiation having the difference-frequency wavelength of the signal and fundamental radiations
摘要:
An optically pumped semiconductor laser includes an active ring-resonator having two or more optically pumped semiconductor (OPS) structures each including a mirror-structure and a multilayer gain-structure. The mirror-structures serve as fold mirrors for the resonator axis. An optically nonlinear crystal may be included in the ring-resonator for generating second-harmonic radiation from fundamental radiation generated in the resonator. Another optically nonlinear crystal may be provided for generating third-harmonic or fourth-harmonic radiation from the second-harmonic radiation. In one example, including a third-harmonic generating crystal, a passive ring-resonator partially coaxial with the active ring-resonator is provided for circulating second-harmonic radiation to provide resonant amplification of the second-harmonic radiation for enhancing third-harmonic conversion. Apparatus for automatically maintaining the passive ring-resonator in a resonant condition for the second-harmonic radiation is disclosed.