LIGHT EMITTING DEVICE FOR AC POWER OPERATION
    1.
    发明申请
    LIGHT EMITTING DEVICE FOR AC POWER OPERATION 有权
    用于交流电源运行的发光装置

    公开(公告)号:US20130169174A1

    公开(公告)日:2013-07-04

    申请号:US13762932

    申请日:2013-02-08

    Abstract: Disclosed is an improved light-emitting device for an AC power operation. An AC light-emitting device according to the present invention employs a variety of means by which light emission time is prolonged during a ½ cycle in response to a phase change of an AC power source and a flicker effect can be reduced. For example, the means may be switching blocks respectively connected to nodes between the light emitting cells, switching blocks connected to a plurality of arrays, or a delay phosphor. Further, there is provided an AC light-emitting device, wherein a plurality of arrays having the different numbers of light emitting cells are employed to increase light emission time and to reduce a flicker effect.

    Abstract translation: 公开了一种用于AC电力操作的改进的发光装置。 根据本发明的交流发光装置采用各种手段,响应于​​交流电源的相变而在1/2周期期间发光时间延长,并且可以减少闪烁效应。 例如,装置可以是分别连接到发光单元,连接到多个阵列的切换块或延迟荧光体之间的节点的切换块。 此外,提供了一种交流发光装置,其中采用具有不同数量的发光单元的多个阵列来增加发光时间并减少闪烁效果。

    LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号:US20130234173A1

    公开(公告)日:2013-09-12

    申请号:US13862052

    申请日:2013-04-12

    Abstract: The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane.

    Abstract translation: 本发明涉及一种发光装置。 发光器件包括衬底,形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层,其中包括N型或P型半导体层的侧表面 与水平面的斜率为20〜80°。 此外,发光器件包括形成有多个发光单元的衬底,每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层,其中,一个N型半导体层 发光单元和另一个相邻的发光单元的P型半导体层彼此连接,并且至少包括发光单元的P型半导体层的侧表面具有从80°到20°的斜率 水平面。

    AC LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20130020593A1

    公开(公告)日:2013-01-24

    申请号:US13625274

    申请日:2012-09-24

    Inventor: Jae Ho LEE

    Abstract: The present invention relates to a light emitting device, including a plurality of light guide portions, a reflection prevention substance disposed on an inclined surface of each light guide portion of the plurality of light guide portions, and a plurality light emitting regions. Each light emitting region includes a first-type semiconductor layer, a second-type semiconductor layer, and an active layer disposed between the first-type semiconductor layer and the second-type semiconductor layer. Each light guide portion of the plurality of light guide portions is surrounded by light emitting regions of the plurality of light emitting regions.

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