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1.发明申请PATTERNED SUBSTRATE FOR LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE EMPLOYING THE SAME 有权用于发光二极管的图案基板和使用其的发光二极管公开(公告)号：US20140080239A1
公开(公告)日：2014-03-20
申请号：US14092203
申请日：2013-11-27
发明人： Yeo Jin YOON , Won Cheol Seo
CPC分类号： H01L33/20 , H01L33/005 , H01L33/22
摘要： Disclosed herein are a patterned substrate for a light emitting diode and a light emitting diode employing the patterned substrate. The substrate has top and bottom surfaces. Protrusion patterns are arranged on the top surface of the substrate. Furthermore, recessed regions surround the protrusion patterns. The recessed regions have irregular bottoms. Thus, the protrusion patterns and the recessed regions can prevent light emitted from a light emitting diode from being lost due to the total reflection to thereby improve light extraction efficiency.
摘要翻译： 本文公开了一种用于发光二极管的图案化衬底和采用图案化衬底的发光二极管。 衬底具有顶表面和底表面。 突出图案布置在基板的顶表面上。 此外，凹陷区域围绕突起图案。 凹陷区域有不规则的底部。 因此，突起图案和凹陷区域可以防止由于全反射而从发光二极管发出的光损失，从而提高光提取效率。
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公开(公告)号：US20140061709A1
公开(公告)日：2014-03-06
申请号：US14074098
申请日：2013-11-07
发明人： Daewoong SUH , Chung Hoon LEE
IPC分类号： H01L33/44
CPC分类号： H01L33/44 , H01L33/0095 , H01L33/20 , H01L33/22 , H01L33/486 , H01L33/50 , H01L33/507 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2933/0041 , H01L2933/0066 , H01L2924/00
摘要： Disclosed are a light emitting diode (LED) package and a method of fabricating the same. The LED package includes a first substrate, a semiconductor stack disposed on a front surface of the first substrate, a second substrate including a first lead electrode and a second lead electrode, a plurality of connectors electrically connecting the semiconductor stack to the first and second lead electrodes, and a wavelength converter covering a rear surface of the first substrate. The semiconductor stack includes a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer.
摘要翻译： 公开了一种发光二极管（LED）封装及其制造方法。 LED封装包括第一衬底，设置在第一衬底的前表面上的半导体堆叠，包括第一引线电极和第二引线电极的第二衬底，将半导体堆叠电连接到第一和第二引线的多个连接器 电极和覆盖第一基板的后表面的波长转换器。 半导体堆叠包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的有源层。
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3.发明授权公开(公告)号：US08609449B2
公开(公告)日：2013-12-17
申请号：US13694058
申请日：2012-10-25
发明人： Chang Youn Kim , Shiro Sakai , Hwa Mok Kim , Joon Hee Lee , Soo Young Moon , Kyoung Wan Kim
IPC分类号： H01L33/06
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L33/005 , H01L33/0079
摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.
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公开(公告)号：US20130330866A1
公开(公告)日：2013-12-12
申请号：US13967019
申请日：2013-08-14
发明人： Yeo Jin YOON , Chang Yeon Kim
IPC分类号： H01L33/60 , H01L21/306 , H01L21/28
CPC分类号： H01L33/60 , H01L21/28 , H01L21/306 , H01L33/0079 , H01L33/22
摘要： The present invention relates to a method of fabricating a patterned substrate for fabricating a light emitting diode (LED), the method including forming an aluminum layer on a substrate, forming an anodic aluminum oxide (AAO) layer having a large number of holes formed therein by performing an anodizing treatment of the aluminum layer, partially etching a surface of the substrate using the aluminum layer with the large number of the holes as a shadow mask, thereby forming patterns, and removing the aluminum layer from the substrate.
摘要翻译： 本发明涉及一种制造用于制造发光二极管（LED）的图案化衬底的方法，所述方法包括在衬底上形成铝层，形成其中形成有大量孔的阳极氧化铝（AAO）层 通过对铝层进行阳极氧化处理，使用具有大量孔的铝层作为荫罩将基板的表面部分蚀刻，从而形成图案，并从基板上除去铝层。
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公开(公告)号：US20130256630A1
公开(公告)日：2013-10-03
申请号：US13853361
申请日：2013-03-29
发明人： Chang Suk HAN , Hwa Mok KIM , Hyo Shik CHOI , Mi So KO , A Ram Cha LEE
IPC分类号： H01L33/06
摘要： Disclosed herein is an ultraviolet (UV) light emitting device. The light emitting device includes an n-type contact layer including a GaN layer; a p-type contact layer including a GaN layer; and an active layer of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, the active area configured to emit near ultraviolet light at wavelengths of 365 nm to 309 nm.
摘要翻译： 本文公开了一种紫外线（UV）发光器件。 发光器件包括：包括GaN层的n型接触层; 包括GaN层的p型接触层; 以及设置在n型接触层和p型接触层之间的多量子阱结构的有源层，有源区被配置为发射波长为365nm至309nm的近紫外光。
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公开(公告)号：US20130169174A1
公开(公告)日：2013-07-04
申请号：US13762932
申请日：2013-02-08
发明人： Chung Hoon LEE , James S. SPECK , Hong San KIM , Jae Jo KIM , Sung Han KIM , Jae Ho LEE
IPC分类号： H05B33/02
CPC分类号： H05B33/0827 , H01L27/153 , H01L27/156 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H05B33/02 , H05B33/08 , H05B33/0806 , H05B33/0815 , H05B33/0821 , H05B33/0824 , H05B33/083 , H05B33/0848 , H05B37/029
摘要： Disclosed is an improved light-emitting device for an AC power operation. An AC light-emitting device according to the present invention employs a variety of means by which light emission time is prolonged during a ½ cycle in response to a phase change of an AC power source and a flicker effect can be reduced. For example, the means may be switching blocks respectively connected to nodes between the light emitting cells, switching blocks connected to a plurality of arrays, or a delay phosphor. Further, there is provided an AC light-emitting device, wherein a plurality of arrays having the different numbers of light emitting cells are employed to increase light emission time and to reduce a flicker effect.
摘要翻译： 公开了一种用于AC电力操作的改进的发光装置。 根据本发明的交流发光装置采用各种手段，响应于交流电源的相变而在1/2周期期间发光时间延长，并且可以减少闪烁效应。 例如，装置可以是分别连接到发光单元，连接到多个阵列的切换块或延迟荧光体之间的节点的切换块。 此外，提供了一种交流发光装置，其中采用具有不同数量的发光单元的多个阵列来增加发光时间并减少闪烁效果。
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7.发明申请Semiconductor substrate, semiconductor device, and manufacturing methods thereof 有权半导体衬底，半导体器件及其制造方法公开(公告)号：US20130122694A1
公开(公告)日：2013-05-16
申请号：US13694749
申请日：2012-12-31
发明人： Shiro Sakai
IPC分类号： H01L21/02
CPC分类号： H01L21/0254 , C30B25/02 , C30B29/406 , H01L29/2003 , H01L33/0075
摘要： Exemplary embodiments of the present invention provide a method of fabricating a semiconductor substrate, the method including growing a first compound semiconductor layer on a first surface of a substrate, etching the first compound semiconductor layer using HF, KOH, or NaOH to roughen a first surface of the first compound semiconductor layer, forming cavities in the first compound semiconductor layer, separating the first compound semiconductor layer from the first surface of the substrate, flattening the first surface of the substrate after separating the first compound semiconductor layer, and growing a second compound semiconductor layer on the flattened first surface of the substrate.
摘要翻译： 本发明的示例性实施例提供一种制造半导体衬底的方法，所述方法包括在衬底的第一表面上生长第一化合物半导体层，使用HF，KOH或NaOH蚀刻第一化合物半导体层以粗糙化第一表面 在所述第一化合物半导体层中形成空腔，将所述第一化合物半导体层与所述基板的第一表面分离，在分离所述第一化合物半导体层之后使所述基板的第一表面平坦化，以及生长第二化合物 半导体层在基板的平坦化的第一表面上。
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8.发明申请Method of fabricating semiconductor substrate and method of fabricating light emitting device 有权制造半导体衬底的方法和制造发光器件的方法公开(公告)号：US20130109121A1
公开(公告)日：2013-05-02
申请号：US13694058
申请日：2012-10-25
发明人： Chang Youn Kim , Shiro Sakai , Hwa Mok Kim , Joon Hee Lee , Soo Young Moon , Kyoung Wan Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L33/005 , H01L33/0079
摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.
摘要翻译： 本发明提供一种制造半导体衬底的方法和一种制造发光器件的方法。 该方法包括在基板上形成第一半导体层，在第一半导体层上形成金属材料层，在第一半导体层和金属材料层上形成第二半导体层，在第一半导体层的第一部分形成空隙 在第二半导体层形成期间在金属材料层下面的第一半导体层，以及通过使用化学溶液蚀刻第一半导体层的至少第二部分来将衬底与第二半导体层分离。
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公开(公告)号：US20140091338A1
公开(公告)日：2014-04-03
申请号：US14099423
申请日：2013-12-06
发明人： Jong Kyu KIM , So Ra Lee , Ho Jun Suk , Jin Cheol Shin
CPC分类号： H01L33/08 , H01L27/156 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： Exemplary embodiments of the present invention relate to light emitting diodes including a plurality of light emitting cells on a substrate to be suitable for AC driving. The light emitting diode includes a substrate and a plurality of light emitting cell formed on the substrate. Each light emitting cell includes a first region at a boundary of the light emitting cell and a second region opposite to the first region. A first electrode pad is formed in the first region of the light emitting cell. A second electrode pad having a linear shape is disposed to face the first electrode pad while regionally defining a peripheral region together with the boundary of the second region. A wire connects the first electrode pad to the second electrode pad between two adjacent light emitting cells.
摘要翻译： 本发明的示例性实施例涉及包括适于AC驱动的衬底上的多个发光单元的发光二极管。 发光二极管包括基板和形成在基板上的多个发光单元。 每个发光单元包括在发光单元的边界处的第一区域和与第一区域相对的第二区域。 第一电极焊盘形成在发光单元的第一区域中。 具有直线形状的第二电极焊盘设置成面对第一电极焊盘，同时区域地限定与第二区域的边界一起的周边区域。 导线将第一电极焊盘连接到两个相邻的发光单元之间的第二电极焊盘。
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10.发明申请公开(公告)号：US20140008671A1
公开(公告)日：2014-01-09
申请号：US14021437
申请日：2013-09-09
发明人： Sung Han KIM , Kyoung Hoon Kim
IPC分类号： H01L33/08
CPC分类号： H01L33/08 , H01L27/153
摘要： Exemplary embodiments of the present invention relate to a light emitting device including a first light emitting cell including a lower light emitting diode and an upper light emitting diode vertically stacked on a substrate and at least three electrodes arranged on the first light emitting cell. Each of the lower light emitting diode and the upper light emitting diode includes an active layer disposed between a lower semiconductor layer and an upper semiconductor layer, the lower semiconductor layer being disposed between the substrate and the upper semiconductor layer.
摘要翻译： 本发明的示例性实施例涉及一种发光器件，其包括第一发光单元，其包括下部发光二极管和垂直堆叠在基板上的上部发光二极管和布置在第一发光单元上的至少三个电极。 下部发光二极管和上部发光二极管中的每一个包括设置在下半导体层和上半导体层之间的有源层，下半导体层设置在基板和上半导体层之间。
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