公开(公告)号：US20140080239A1

公开(公告)日：2014-03-20

申请号：US14092203

申请日：2013-11-27

申请人： Seoul Opto Device Co., Ltd.

发明人： Yeo Jin YOON ,  Won Cheol Seo

IPC分类号： H01L33/20 ,  H01L33/00

CPC分类号： H01L33/20 ,  H01L33/005 ,  H01L33/22

摘要： Disclosed herein are a patterned substrate for a light emitting diode and a light emitting diode employing the patterned substrate. The substrate has top and bottom surfaces. Protrusion patterns are arranged on the top surface of the substrate. Furthermore, recessed regions surround the protrusion patterns. The recessed regions have irregular bottoms. Thus, the protrusion patterns and the recessed regions can prevent light emitted from a light emitting diode from being lost due to the total reflection to thereby improve light extraction efficiency.

摘要翻译： 本文公开了一种用于发光二极管的图案化衬底和采用图案化衬底的发光二极管。 衬底具有顶表面和底表面。 突出图案布置在基板的顶表面上。 此外，凹陷区域围绕突起图案。 凹陷区域有不规则的底部。 因此，突起图案和凹陷区域可以防止由于全反射而从发光二极管发出的光损失，从而提高光提取效率。

公开(公告)号：US20130330866A1

公开(公告)日：2013-12-12

申请号：US13967019

申请日：2013-08-14

申请人： SEOUL OPTO DEVICE CO., LTD.

发明人： Yeo Jin YOON ,  Chang Yeon Kim

IPC分类号： H01L33/60 ,  H01L21/306 ,  H01L21/28

CPC分类号： H01L33/60 ,  H01L21/28 ,  H01L21/306 ,  H01L33/0079 ,  H01L33/22

摘要： The present invention relates to a method of fabricating a patterned substrate for fabricating a light emitting diode (LED), the method including forming an aluminum layer on a substrate, forming an anodic aluminum oxide (AAO) layer having a large number of holes formed therein by performing an anodizing treatment of the aluminum layer, partially etching a surface of the substrate using the aluminum layer with the large number of the holes as a shadow mask, thereby forming patterns, and removing the aluminum layer from the substrate.

摘要翻译： 本发明涉及一种制造用于制造发光二极管（LED）的图案化衬底的方法，所述方法包括在衬底上形成铝层，形成其中形成有大量孔的阳极氧化铝（AAO）层 通过对铝层进行阳极氧化处理，使用具有大量孔的铝层作为荫罩将基板的表面部分蚀刻，从而形成图案，并从基板上除去铝层。

公开(公告)号：US20130234173A1

公开(公告)日：2013-09-12

申请号：US13862052

申请日：2013-04-12

申请人： SEOUL OPTO DEVICE CO., LTD.

发明人： Jong Lam LEE ,  Jae Ho LEE ,  Yeo Jin YOON ,  Eu Jin HWANG ,  Dae Won KIM

IPC分类号： H01L33/08

CPC分类号： H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

摘要： The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane.

摘要翻译： 本发明涉及一种发光装置。 发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型或P型半导体层的侧表面 与水平面的斜率为20〜80°。 此外，发光器件包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，其中，一个N型半导体层 发光单元和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括发光单元的P型半导体层的侧表面具有从80°到20°的斜率 水平面。