公开(公告)号：US20220352355A1

公开(公告)日：2022-11-03

申请号：US17863437

申请日：2022-07-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takahiro TSUJI ,  Kunihiko SUZUKI

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L21/66 ,  H01L21/02 ,  H01L29/04

Abstract: An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film transistor in which an oxide semiconductor layer is used, the amount of change in threshold voltage of the thin film transistor before and after a BT test is made to be 2 V or less, preferably 1.5 V or less, more preferably 1 V or less, whereby the semiconductor device which has high reliability and stable electric characteristics can be manufactured. In particular, in a display device which is one embodiment of the semiconductor device, a malfunction such as display unevenness due to change in threshold voltage can be reduced.

公开(公告)号：US20150194508A1

公开(公告)日：2015-07-09

申请号：US14665503

申请日：2015-03-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takahiro TSUJI ,  Kunihiko SUZUKI

IPC: H01L29/66 ,  H01L21/66

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02667 ,  H01L22/14 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/7869

Abstract: An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film transistor in which an oxide semiconductor layer is used, the amount of change in threshold voltage of the thin film transistor before and after a BT test is made to be 2 V or less, preferably 1.5 V or less, more preferably 1 V or less, whereby the semiconductor device which has high reliability and stable electric characteristics can be manufactured. In particular, in a display device which is one embodiment of the semiconductor device, a malfunction such as display unevenness due to change in threshold voltage can be reduced.

Abstract translation: 本发明的目的是提供一种使用具有稳定电特性的氧化物半导体层的高可靠性薄膜晶体管。 在使用氧化物半导体层的薄膜晶体管中，BT测试前后的薄膜晶体管的阈值电压的变化量为2V以下，优选为1.5V以下，更优选为1 V以下，由此可以制造具有高可靠性和稳定电特性的半导体器件。 特别地，在作为半导体器件的一个实施例的显示装置中，可以降低由于阈值电压的变化引起的诸如显示不均的故障。

公开(公告)号：US20160329359A1

公开(公告)日：2016-11-10

申请号：US15217177

申请日：2016-07-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Shuhei YOSHITOMI ,  Takahiro TSUJI ,  Miyuki HOSOBA ,  Junichiro SAKATA ,  Hiroyuki TOMATSU ,  Masahiko HAYAKAWA

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L27/1262 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.

公开(公告)号：US20150044818A1

公开(公告)日：2015-02-12

申请号：US14521710

申请日：2014-10-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Shuhei YOSHITOMI ,  Takahiro TSUJI ,  Miyuki HOSOBA ,  Junichiro SAKATA ,  Hiroyuki TOMATSU ,  Masahiko HAYAKAWA

IPC: H01L27/12 ,  H01L29/66

CPC classification number: H01L27/1262 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.

Abstract translation: 本发明的目的是提供一种包括氧化物半导体膜的薄膜晶体管的结构的制造方法，其中形成沟道的阈值电压为正且尽可能接近0V。 形成保护绝缘层以覆盖包括通过第一热处理脱水或脱氢的氧化物半导体层的薄膜晶体管，以及在比第一热处理低的温度下进行第二热处理，其中， 重复多次温度的降低，由此，在不影响通道长度的情况下，包含氧化物半导体层的薄膜晶体管，其中形成沟道的阈值电压为正且尽可能接近0V，可以 制造。

公开(公告)号：US20130277671A1

公开(公告)日：2013-10-24

申请号：US13922537

申请日：2013-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takahiro TSUJI ,  Teruaki OCHIAI ,  Koji KUSUNOKI ,  Hidekazu MIYAIRI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/45

Abstract: An object is to provide a highly reliable transistor and a semiconductor device including the transistor. A semiconductor device including a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and a source electrode and a drain electrode over the oxide semiconductor film, in which activation energy of the oxide semiconductor film obtained from temperature dependence of a current (on-state current) flowing between the source electrode and the drain electrode when a voltage greater than or equal to a threshold voltage is applied to the gate electrode is greater than or equal to 0 meV and less than or equal to 25 meV, is provided.

公开(公告)号：US20240038876A1

公开(公告)日：2024-02-01

申请号：US18376995

申请日：2023-10-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takahiro TSUJI ,  Kunihiko SUZUKI

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L21/66 ,  H01L21/02 ,  H01L29/04

CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/66742 ,  H01L22/14 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02667 ,  H01L29/04

Abstract: An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film transistor in which an oxide semiconductor layer is used, the amount of change in threshold voltage of the thin film transistor before and after a BT test is made to be 2 V or less, preferably 1.5 V or less, more preferably 1 V or less, whereby the semiconductor device which has high reliability and stable electric characteristics can be manufactured. In particular, in a display device which is one embodiment of the semiconductor device, a malfunction such as display unevenness due to change in threshold voltage can be reduced.

公开(公告)号：US20200006534A1

公开(公告)日：2020-01-02

申请号：US16568929

申请日：2019-09-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takahiro TSUJI ,  Kunihiko SUZUKI

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L21/66 ,  H01L21/02 ,  H01L29/04

Abstract: An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film transistor in which an oxide semiconductor layer is used, the amount of change in threshold voltage of the thin film transistor before and after a BT test is made to be 2 V or less, preferably 1.5 V or less, more preferably 1 V or less, whereby the semiconductor device which has high reliability and stable electric characteristics can be manufactured. In particular, in a display device which is one embodiment of the semiconductor device, a malfunction such as display unevenness due to change in threshold voltage can be reduced.

公开(公告)号：US20130149798A1

公开(公告)日：2013-06-13

申请号：US13761421

申请日：2013-02-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro TSUJI ,  Koji MORIYA

IPC: H01L33/00

CPC classification number: H01L33/0095 ,  G09G3/006 ,  G09G3/20 ,  G09G3/344 ,  G09G2300/043 ,  G09G2320/0252 ,  G09G2330/021 ,  G09G2330/08 ,  H01L27/1225 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One object is to provide a method for manufacturing a display device in which shift of the threshold voltage of a thin film transistor including an oxide semiconductor layer can be suppressed even when ultraviolet light irradiation is performed in the process for manufacturing the display device. In the method for manufacturing a display device, ultraviolet light irradiation is performed at least once, a thin film transistor including an oxide semiconductor layer is used for a switching element, and heat treatment for repairing damage to the oxide semiconductor layer caused by the ultraviolet light irradiation is performed after all the steps of ultraviolet light irradiation are completed.

Abstract translation: 一个目的是提供一种用于制造显示装置的方法，其中即使在制造显示装置的过程中执行紫外光照射，也可以抑制包括氧化物半导体层的薄膜晶体管的阈值电压的偏移。 在显示装置的制造方法中，至少进行一次紫外线照射，将包含氧化物半导体层的薄膜晶体管用于开关元件，并且对由紫外线引起的氧化物半导体层的损坏进行修复的热处理 在紫外线照射的所有步骤完成之后进行照射。

公开(公告)号：US20170154983A1

公开(公告)日：2017-06-01

申请号：US15432077

申请日：2017-02-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takahiro TSUJI ,  Kunihiko SUZUKI

IPC: H01L29/66 ,  H01L21/66 ,  H01L21/02 ,  H01L29/04 ,  H01L29/786

Abstract: An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film transistor in which an oxide semiconductor layer is used, the amount of change in threshold voltage of the thin film transistor before and after a BT test is made to be 2 V or less, preferably 1.5 V or less, more preferably 1 V or less, whereby the semiconductor device which has high reliability and stable electric characteristics can be manufactured. In particular, in a display device which is one embodiment of the semiconductor device, a malfunction such as display unevenness due to change in threshold voltage can be reduced.

公开(公告)号：US20150069390A1

公开(公告)日：2015-03-12

申请号：US14541165

申请日：2014-11-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takahiro TSUJI ,  Teruaki OCHIAI ,  Koji KUSUNOKI ,  Hidekazu MIYAIRI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/45

Abstract: An object is to provide a highly reliable transistor and a semiconductor device including the transistor. A semiconductor device including a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and a source electrode and a drain electrode over the oxide semiconductor film, in which activation energy of the oxide semiconductor film obtained from temperature dependence of a current (on-state current) flowing between the source electrode and the drain electrode when a voltage greater than or equal to a threshold voltage is applied to the gate electrode is greater than or equal to 0 meV and less than or equal to 25 meV, is provided.

Abstract translation: 目的是提供一种高度可靠的晶体管和包括晶体管的半导体器件。 一种包括栅电极的半导体器件; 栅电极上的栅极绝缘膜; 栅极绝缘膜上的氧化物半导体膜; 以及氧化物半导体膜上的源电极和漏电极，其中当氧化物半导体膜的电压大于电压时，源电极和漏电极之间流过的电流（导通电流）的温度依赖性获得氧化物半导体膜的活化能 或等于施加到栅电极的阈值电压大于或等于0meV且小于或等于25meV。