摘要:
A semiconductor device includes a semiconductor element and a lead frame. The lead frame includes a first lead, a second lead, a third lead, a fourth lead, and a fifth lead placed parallel to one another. The first and second leads are placed adjoining to each other and constitute a first lead group, and the third and fourth leads are placed adjoining to each other and constitute a second lead group. The spacing between the first lead group and the fifth lead, the spacing between the second lead group and the fifth lead, and the spacing between the first lead group and the second lead group are larger than the spacing between the first lead and the second lead and the spacing between the third lead and the fourth lead.
摘要:
An electronic component is mounted on a circuit board. The electronic component includes: a lead frame including a fixed portion, a lead portion connected to the fixed portion, and a heat-dissipating portion connected to the fixed portion; a semiconductor chip fixed on the fixed portion by a first binder; and an encapsulation resin for encapsulating the fixed portion, the semiconductor chip, and a base portion of the lead portion. A groove is provided in the fixed portion and the heat-dissipating portion of the lead frame. The groove extends from a portion of the fixed portion where the first binder is present toward the heat-dissipating portion.
摘要:
An electronic component is mounted on a circuit board. The electronic component includes: a lead frame including a fixed portion, a lead portion connected to the fixed portion, and a heat-dissipating portion connected to the fixed portion; a semiconductor chip fixed on the fixed portion by a first binder; and an encapsulation resin for encapsulating the fixed portion, the semiconductor chip, and a base portion of the lead portion. A groove is provided in the fixed portion and the heat-dissipating portion of the lead frame. The groove extends from a portion of the fixed portion where the first binder is present toward the heat-dissipating portion.
摘要:
An amplitude frequency characteristic adjustment circuit 106 is provided downstream of and connected to a distortion generation circuit 105. An amplitude difference between low-frequency-side and high-frequency-side distortion voltages is adjusted by the amplitude frequency characteristic adjustment circuit 106, and then their amplitudes and phases are adjusted by a vector adjustment circuit 107. This configuration makes it possible to suppress simultaneously both of low-frequency-side and high-frequency-side distortion voltages of a distortion generated by a wide-band class-AB power amplifier even if they are different in amplitude and phase.
摘要:
A coated paper used for printing and manufacturing method thereof. The coated paper comprises a coated layer mainly compose of a pigment and an adhesive on a base paper or paper web. The coated paper also comprises the thermal shrinkage force (R) which satisfies following formula when measured pursuant to the measuring method described in the specification; 0≦R≦45 gf A sample coated paper is moisture-adjusted in accordance with JIS-P-8111. Then, it will be cut into specific dimension along with orthogonally to the cross direction. Next, the paper will be put through Thermo Mechanical Analyzer to obtain R that is measured by predetermined technique. The coated paper will be obtained easily by using a base paper coated with PVA having a saponification degree of not less than 85 mol % in an amount of 0.5-5 g/m2 per side surface after the coating material was dried and dried.
摘要:
An amplitude frequency characteristic adjustment circuit 106 is provided downstream of and connected to a distortion generation circuit 105. An amplitude difference between low-frequency-side and high-frequency-side distortion voltages is adjusted by the amplitude frequency characteristic adjustment circuit 106, and then their amplitudes and phases are adjusted by a vector adjustment circuit 107. This configuration makes it possible to suppress simultaneously both of low-frequency-side and high-frequency-side distortion voltages of a distortion generated by a wide-band class-AB power amplifier even if they are different in amplitude and phase.
摘要:
A hydrogen manufacturing apparatus for manufacturing hydrogen by utilizing heat generated in a nuclear plant. The apparatus has a heat exchanger or steam reformer to be brought into contact with cooling water containing tritium produced from the nuclear plant and a tritium permeation suppressing ceramic coating at least either the outer surface or the inner surface of the heat exchanger or steam reformer for suppressing permeation of tritium. Instead of coating with a tritium permeation suppressing ceramic, a structure prepared by combining at least two types of materials having different crystal structures may be used.
摘要:
An amplitude frequency characteristic adjustment circuit 106 is provided downstream of and connected to a distortion generation circuit 105. An amplitude difference between low-frequency-side and high-frequency-side distortion voltages is adjusted by the amplitude frequency characteristic adjustment circuit 106, and then their amplitudes and phases are adjusted by a vector adjustment circuit 107. This configuration makes it possible to suppress simultaneously both of low-frequency-side and high-frequency-side distortion voltages of a distortion generated by a wide-band class-AB power amplifier even if they are different in amplitude and phase.
摘要:
An amplitude frequency characteristic adjustment circuit 106 is provided downstream of and connected to a distortion generation circuit 105. An amplitude difference between low-frequency-side and high-frequency-side distortion voltages is adjusted by the amplitude frequency characteristic adjustment circuit 106, and then their amplitudes and phases are adjusted by a vector adjustment circuit 107. This configuration makes it possible to suppress simultaneously both of low-frequency-side and high-frequency-side distortion voltages of a distortion generated by a wide-band class-AB power amplifier even if they are different in amplitude and phase.
摘要:
It was difficult to acquire a good CO cleanup efficiency in a hydrogen refining apparatus, for instance, when the start-up and stop operations are frequently repeated. A hydrogen refining apparatus, including a shifter having a shifting catalyst body containing noble metals and metal oxides, and a reforming section for supplying hydrogen gas containing carbon monoxide to the shifter, (1) the temperature of an upstream side of the shifting catalyst body relative to the hydrogen gas flow being substantially between 300° C. and 500° C. and (2) the temperature of a downstream side of the shifting catalyst body relative to the hydrogen gas flow being substantially at 300° C. or less.