公开(公告)号：US20230402101A1

公开(公告)日：2023-12-14

申请号：US17835396

申请日：2022-06-08

Applicant: SanDisk Technologies LLC

Inventor： KIRUBAKARAN PERIYANNAN ,  DANIEL J. LINNEN ,  JAYAVEL PACHAMUTHU

IPC: G11C16/10 ,  G11C16/16 ,  G11C16/26 ,  G11C16/08 ,  G11C16/24

CPC classification number: G11C16/102 ,  G11C16/16 ,  G11C16/26 ,  G11C16/08 ,  G11C16/24

Abstract: Embodiments of the present disclosure generally include methods of specially programming a set of memory cells, wherein each specially programmed memory cell is specially programmed along with programming a plurality of wordlines, and wherein each memory cell is specially programmed by altering a bitline and gate voltage applied to the memory cell. The methods further includes performing a sensing operation across a set of strings in the array of memory cells, determining, based on the sensing operation, whether one or more strings failed to conduct during a sensing operation, and determining the last programmed wordline using the one or more strings that failed to conduct.