公开(公告)号：US09236368B2

公开(公告)日：2016-01-12

申请号：US14422155

申请日：2013-01-28

Applicant: SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD.

Inventor： Shiv Kumar ,  Chin-Tien Chiu ,  Kaiyou Qian ,  Cheeman Yu

IPC: H01L23/52 ,  H01L25/18 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L23/13 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L25/18 ,  H01L21/56 ,  H01L23/13 ,  H01L23/3121 ,  H01L23/3128 ,  H01L24/24 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/82 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05554 ,  H01L2224/24227 ,  H01L2224/24247 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48101 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48482 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82102 ,  H01L2224/82105 ,  H01L2224/85 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/06596 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: A semiconductor device includes a substrate (102) with a cavity (112) formed therein for receiving a semiconductor die. In examples, the semiconductor die is a controller die (114). The controller die (114) may be electrically connected to the substrate (102) with electrical traces (120) which may be formed for example by printing. After the controller die (114) is electrically connected to the substrate (102), one or more memory die (150) may be affixed to the substrate (102), over the cavity (112) and controller die (114).

Abstract translation: 半导体器件包括其中形成有用于接收半导体管芯的空腔（112）的衬底（102）。 在示例中，半导体管芯是控制器管芯（114）。 控制器管芯（114）可以用例如印刷形成的电迹线（120）电连接到基板（102）。 在控制器管芯（114）电连接到衬底（102）之后，一个或多个存储器管芯（150）可以在空腔（112）和控制器管芯（114）上固定到衬底（102）上。

公开(公告)号：US20170110383A1

公开(公告)日：2017-04-20

申请号：US15395027

申请日：2016-12-30

Applicant: SanDisk Information Technology (Shanghai) Co. Ltd.

Inventor： Dacheng Huang ,  Ye Bai ,  Kaiyou Qian ,  Chin-Tien Chiu

IPC: H01L23/31 ,  H01L25/00 ,  H01L23/552 ,  H01L25/065 ,  H01L21/56 ,  H01L23/498

CPC classification number: H01L23/3135 ,  H01L23/3121 ,  H01L23/49811 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/552 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48147 ,  H01L2224/48227 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06537 ,  H01L2225/06562 ,  H01L2924/15311 ,  H01L2924/00014

Abstract: A semiconductor device is disclosed including material for absorbing EMI and/or RFI. The device includes a substrate, one or more semiconductor die, and molding compound around the one or more semiconductor die. The material for absorbing EMI and/or RFI may be provided within or on a solder mask layer on the substrate, or within a dielectric core of the substrate. The device may further include EMI/RFI-absorbing material around the molding compound and in contact with the EMI/RFI-absorbing material on the substrate to completely enclose the one or more semiconductor die in EMI/RFI-absorbing material.

公开(公告)号：US20150214206A1

公开(公告)日：2015-07-30

申请号：US14422155

申请日：2013-01-28

Applicant: SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD.

Inventor： Shiv Kumar ,  Chin-Tien Chiu ,  Kaiyou Qian ,  Cheeman Yu

IPC: H01L25/18 ,  H01L23/31 ,  H01L21/56 ,  H01L25/00

CPC classification number: H01L25/18 ,  H01L21/56 ,  H01L23/13 ,  H01L23/3121 ,  H01L23/3128 ,  H01L24/24 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/82 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05554 ,  H01L2224/24227 ,  H01L2224/24247 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48101 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48482 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82102 ,  H01L2224/82105 ,  H01L2224/85 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/06596 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: A semiconductor device includes a substrate (102) with a cavity (112) formed therein for receiving a semiconductor die. In examples, the semiconductor die is a controller die (114). The controller die (114) may be electrically connected to the substrate (102) with electrical traces (120) which may be formed for example by printing. After the controller die (114) is electrically connected to the substrate (102), one or more memory die (150) may be affixed to the substrate (102), over the cavity (112) and controller die (114).

Abstract translation: 半导体器件包括其中形成有用于接收半导体管芯的空腔（112）的衬底（102）。 在示例中，半导体管芯是控制器管芯（114）。 控制器管芯（114）可以用例如印刷形成的电迹线（120）电连接到基板（102）。 在控制器管芯（114）电连接到衬底（102）之后，一个或多个存储器管芯（150）可以在空腔（112）和控制器管芯（114）上固定到衬底（102）上。

公开(公告)号：US09947606B2

公开(公告)日：2018-04-17

申请号：US15395027

申请日：2016-12-30

Applicant: SanDisk Information Technology (Shanghai) Co. Ltd.

Inventor： Dacheng Huang ,  Ye Bai ,  Kaiyou Qian ,  Chin-Tien Chiu

IPC: H01L23/552 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065 ,  H01L25/18

CPC classification number: H01L23/3135 ,  H01L23/3121 ,  H01L23/49811 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/552 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48147 ,  H01L2224/48227 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06537 ,  H01L2225/06562 ,  H01L2924/15311 ,  H01L2924/00014

Abstract: A semiconductor device is disclosed including material for absorbing EMI and/or RFI. The device includes a substrate, one or more semiconductor die, and molding compound around the one or more semiconductor die. The material for absorbing EMI and/or RFI may be provided within or on a solder mask layer on the substrate, or within a dielectric core of the substrate. The device may further include EMI/RFI-absorbing material around the molding compound and in contact with the EMI/RFI-absorbing material on the substrate to completely enclose the one or more semiconductor die in EMI/RFI-absorbing material.