公开(公告)号：US20230290784A1

公开(公告)日：2023-09-14

申请号：US18175696

申请日：2023-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungho Do ,  Jisu Yu ,  Hyeongyu You ,  Yunkyeong Jang ,  Minjae Jeong

IPC: H01L27/118 ,  H01L27/02

CPC classification number: H01L27/11807 ,  H01L27/0207 ,  H01L2027/11809

Abstract: An integrated circuit may include a first active pattern group extending in a first direction in a first row and including a plurality of first active patterns overlapping each other in the first direction, the first row extending in the first direction, and a plurality of gate electrodes extending in a second direction perpendicular to the first direction in the first row. The plurality of first active patterns may include any two first active patterns that are adjacent to each other in the first direction, the two first active patterns have first and second widths in the second direction, respectively, and the first and second widths are identical or are different by a first offset or a second offset.

公开(公告)号：US10410886B2

公开(公告)日：2019-09-10

申请号：US15602599

申请日：2017-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： TaeYong Kwon ,  Sangjin Kim ,  Donghoon Hwang ,  Sebeom Oh ,  Yunkyeong Jang

IPC: H01L21/56 ,  H01L21/311 ,  H01L21/8234 ,  H01L23/544 ,  H01L21/308

Abstract: Methods of fabricating a semiconductor device are provided. The methods may include forming a lower mold layer on a substrate that includes first and second regions, forming first and second intermediate mold patterns on the first and second regions, respectively, forming first spacers on sidewalls of the first and second intermediate mold patterns, etching the lower mold layer to form first and second lower mold patterns on the first and second regions, respectively, and etching the substrate to form active patterns and dummy patterns on the first and second regions, respectively. A first distance between a pair of the first intermediate mold patterns may be greater than a second distance between a pair of the second intermediate mold patterns, and the second lower mold patterns may include at least one first merged pattern, whose width is substantially equal to the second distance.