公开(公告)号：US20240332059A1

公开(公告)日：2024-10-03

申请号：US18390026

申请日：2023-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngin KIM ,  BYOUNGHO KWON ,  Yeil KIM ,  JONGHYUK PARK ,  JIN-WOO BAE ,  KYOUNGJOON SONG ,  MYUNGJAE JANG ,  Byungsoo JOO

IPC: H01L21/762 ,  H01L21/306 ,  H01L21/308 ,  H01L21/768

CPC classification number: H01L21/762 ,  H01L21/30625 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/76831 ,  H01L21/76832

Abstract: A method of fabricating a semiconductor device includes forming, in a semiconductor substrate, a device isolation trench defining active regions, forming a first liner dielectric layer covering a top surface of the semiconductor substrate and an inner wall of the device isolation trench, forming a second liner dielectric layer covering the first liner dielectric layer, forming a buried dielectric layer filling the device isolation trench, performing a polishing process on the second liner dielectric layer and the buried dielectric layer to form a device isolation structure, forming a mask pattern running across the active regions, and partially patterning the active regions and the device isolation structure to form gate trenches. After the polishing process, the first liner dielectric layer, the second liner dielectric layer, and the buried dielectric layer have their top surfaces formed by the polishing process coplanar with each other.

公开(公告)号：US20160202290A1

公开(公告)日：2016-07-14

申请号：US14959641

申请日：2015-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngin KIM ,  Jungho KIM ,  Jongsam KIM ,  Byung-Soo PARK ,  Sookil PARK ,  Byungkook YOO ,  Seong Sil JEONG ,  Wooseong CHOI

IPC: G01R1/04 ,  G01R1/073

CPC classification number: G01R31/2893

Abstract: Probe card transfer units and probe card management apparatuses including the same may be provided. The transfer unit includes a hand part including grippers holding a package and a moving part moving the hand part. Each of the grippers includes at least one locking pin protruding from a holding bar, which extends in a direction perpendicular to the holding bar, to securely hold the package.

Abstract translation: 可以提供包括其的探针卡传送单元和探针卡管理装置。 转印单元包括手部，其包括保持包装的夹持器和移动手部的移动部。 每个夹持器包括从保持杆突出的至少一个锁定销，其沿垂直于保持杆的方向延伸，以牢固地保持包装。

公开(公告)号：US20160185535A1

公开(公告)日：2016-06-30

申请号：US14955432

申请日：2015-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngin KIM ,  Jongsam KIM ,  Byung-Soo PARK ,  Sookil PARK ,  Byungkook YOO ,  Younghyen LEE ,  Seong Sil JEONG ,  Wooseong CHOI

IPC: B65G47/90 ,  G01R31/26 ,  G01R1/04

CPC classification number: G01R31/2601 ,  G01R31/2889 ,  G01R31/2893

Abstract: A loading apparatus is provided which includes a package jig, a transfer unit, and a load port. The package jig is fixed to a package. The transfer unit includes a hand for holding the package jig and transferring the package. The package transferred by the transfer unit is loaded on the load port. The load port and the hand include first alignment pins and first alignment sockets for aligning the package to the load port.

Abstract translation: 提供一种装载装置，其包括封装夹具，转印单元和装载端口。 包装夹具固定在包装上。 传送单元包括用于保持包装夹具并传送包装的手。 由传送单元传送的包裹装载在装载端口上。 装载端口和手包括第一对准销和用于使包装与装载端口对准的第一对准插座。

公开(公告)号：US20230260828A1

公开(公告)日：2023-08-17

申请号：US18092239

申请日：2022-12-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngin KIM ,  Jonghyuk PARK ,  Byoungho KWON

IPC: H01L21/762 ,  H01L29/66

CPC classification number: H01L21/76229 ,  H01L29/66621

Abstract: A manufacturing method of a semiconductor device includes: etching a substrate, thereby forming a cell trench and a dummy trench; forming a preliminary isolation structure on the substrate, wherein a first dummy recess is formed in the preliminary isolation structure and overlaps with the dummy trench; forming a lower mask layer on the preliminary isolation structure, wherein a second dummy recess is formed in the lower mask layer and overlaps with the first dummy recess; forming a dummy recess filling pattern filling the second dummy recess; forming an upper mask layer on the lower mask layer and the dummy recess filling pattern; forming a gate trench using the lower mask layer and the upper mask layer as a mask; and forming a gate structure in the gate trench.