公开(公告)号：US10424497B2

公开(公告)日：2019-09-24

申请号：US15628725

申请日：2017-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bum-Soo Kim ,  Philwoong Jung ,  Yoonmi Lee ,  Hangryong Lim ,  Manyoung Shin ,  Young Hoon Son

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/00

Abstract: A wafer carrier including a case having an opening at one end, slots disposed in the case and receiving wafers, and a wireless communication circuitry disposed on an inner sidewall of the case and configured to detect humidity of a gas contained in the case may be provided. The wireless communication circuitry may be further configured to compare the detected humidity with a threshold humidity predetermined, and transmit a first warning signal to an external host via wireless communication when the detected humidity is greater than the threshold humidity.

公开(公告)号：US10431506B2

公开(公告)日：2019-10-01

申请号：US15848896

申请日：2017-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dusik Bae ,  Yoonmi Lee ,  Hyeogki Kim ,  Kyoungsil Park ,  JungDae Park

IPC: H01L21/66 ,  H01L21/311 ,  G01N21/65 ,  H01L21/67 ,  H01L21/033 ,  G01N21/956

Abstract: Disclosed are a method of processing a substrate and a method of fabricating a semiconductor device using the same. The method of processing a substrate comprises forming a mask layer on a substrate, inspecting the mask layer, and forming a mask pattern based on an inspection result of the mask layer. The operation of inspecting the mask layer comprises using Raman spectrum analysis to detect defects in the mask layer.

公开(公告)号：US20180204777A1

公开(公告)日：2018-07-19

申请号：US15848896

申请日：2017-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dusik BAE ,  Yoonmi Lee ,  Hyeogki Kim ,  Kyoungsil Park ,  JungDae Park

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/311 ,  G01N21/65

CPC classification number: H01L22/12 ,  G01N21/65 ,  G01N21/9501 ,  G01N2021/8427 ,  G01N2021/95676 ,  H01L21/0334 ,  H01L21/31116 ,  H01L21/67069 ,  H01L22/20 ,  H01L22/24 ,  H01L22/26

Abstract: Disclosed are a method of processing a substrate and a method of fabricating a semiconductor device using the same. The method of processing a substrate comprises forming a mask layer on a substrate, inspecting the mask layer, and forming a mask pattern based on an inspection result of the mask layer. The operation of inspecting the mask layer comprises using Raman spectrum analysis to detect defects in the mask layer.