Abstract:
A semiconductor memory device includes a memory cell array and a refresh control circuit. The refresh circuit is configured to: perform a second burst refresh operation on the memory cell rows after the memory cell rows exit from a self refresh operation, and not perform the second burst refresh operation on the memory cell rows after the memory cell rows exit from a self refresh operation. Whether the refresh control circuit performs or does not perform the second burst refresh operation is based on a comparison between an entering time for the self refresh operation of the memory cell rows and a reference time.
Abstract:
An antenna device implemented to prevent the deterioration in radiation performance due to a metal mechanical part and an electronic device including the same is provided. The electronic device includes a metal member in a shape of a loop that is disposed in at least one area of the electronic device and a substrate (printed circuit board (PCB)) for supplying power to a preset location of the metal member in order to use the metal member as an antenna radiator, wherein at least one location of the metal member that differs from the power-supplied location is grounded through the substrate.