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Patent Agency Ranking
公开(公告)号：US20180175264A1
公开(公告)日：2018-06-21
申请号：US15703098
申请日：2017-09-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin-sub LEE , Yong-il KIM , Han-kyu SEONG , Young-jin CHOI
CPC classification number: H01L33/58 , F21K9/232 , F21K9/233 , F21K9/237 , F21K9/27 , F21K9/275 , F21S8/026 , F21V23/045 , F21Y2103/10 , F21Y2115/10 , G02B6/0073 , G02F1/133514 , G09F13/00 , H01L33/06 , H01L33/30 , H01L33/32 , H01L33/486 , H01L33/502 , H01L33/60 , H01L33/62 , H01L2933/0041 , H01L2933/0058 , H01L2933/0066
Abstract: A light-emitting diode (LED) package includes: a reflective structure including a cavity, a bottom portion having a through hole, and a sidewall portion surrounding the cavity and the bottom portion and having an inclined inner side surface; an electrode pad inserted into the through hole; an LED on the bottom portion in the cavity, the LED including a light-emitting structure electrically connected to the electrode pad and a phosphor formed on the light-emitting structure; and a lens structure filling the cavity and formed on the reflective structure.
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2.发明申请LIGHT-EMITTING DIODE (LED), LED PACKAGE AND APPARATUS INCLUDING THE SAME 有权发光二极管（LED），LED封装和设备，包括它们公开(公告)号：US20170062680A1
公开(公告)日：2017-03-02
申请号：US15201384
申请日：2016-07-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ha-nul YOO , Yong-il KIM , Nam-goo CHA , Wan-tae LIM , Kyung-wook HWANG , Sung-hyun SIM , Hye-seok NOH
CPC classification number: H01L33/60 , H01L25/0753 , H01L33/06 , H01L33/145 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/50 , H01L33/502 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
Abstract translation: 发光二极管（LED）封装包括发光结构，发光结构上的光波长转换层和光波长转换层上的滤光层。 发光结构包括第一导电型半导体层，第一导电型半导体层上的有源层和有源层上的第二导电型半导体层，并且发射具有第一导电型半导体层的第一光 波长。 光波长转换层吸收从发光结构发射的第一光，并发射具有与第一峰值波长不同的第二峰值波长的第二光。 光学滤波器层反射从发光结构发射的第一光，并透射从光波长转换层发射的第二光。
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公开(公告)号：US20190088839A1
公开(公告)日：2019-03-21
申请号：US16192864
申请日：2018-11-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin-sub LEE , Yong-il KIM , Han-kyu SEONG , Young-jin CHOI
IPC: H01L33/58 , H01L33/50 , H01L33/60 , H01L33/48 , F21K9/27 , F21K9/233 , F21K9/237 , G09F13/00 , H01L33/62 , H01L33/06 , F21V8/00 , H01L33/32 , H01L33/30 , F21K9/232 , G02F1/1335 , F21Y115/10 , F21Y103/10 , F21V23/04 , F21S8/02 , F21K9/275
CPC classification number: H01L33/58 , F21K9/232 , F21K9/233 , F21K9/237 , F21K9/27 , F21K9/275 , F21S8/026 , F21V23/045 , F21Y2103/10 , F21Y2115/10 , G02B6/0073 , G02F1/133514 , G09F13/00 , H01L33/06 , H01L33/30 , H01L33/32 , H01L33/486 , H01L33/502 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2933/0041 , H01L2933/0058 , H01L2933/0066
Abstract: A light-emitting diode (LED) package includes: a reflective structure including a cavity, a bottom portion having a through hole, and a sidewall portion surrounding the cavity and the bottom portion and having an inclined inner side surface; an electrode pad inserted into the through hole; an LED on the bottom portion in the cavity, the LED including a light-emitting structure electrically connected to the electrode pad and a phosphor formed on the light-emitting structure; and a lens structure filling the cavity and formed on the reflective structure.
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公开(公告)号：US20170244010A1
公开(公告)日：2017-08-24
申请号：US15362966
申请日：2016-11-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung-sub KIM , Yong-il KIM , Dong-gun LEE , Kyung-wook HWANG , Jin-sub LEE , Min-gyeong GWON
CPC classification number: H01L33/58 , G02B5/208 , H01L25/0753 , H01L33/0079 , H01L33/06 , H01L33/32 , H01L33/44 , H01L33/504 , H01L33/508 , H01L33/56 , H01L33/60 , H01L2933/0041 , H01L2933/005 , H01L2933/0058
Abstract: A light-emitting device package includes a plurality of luminescent structures arranged spaced apart from each other in a horizontal direction, an intermediate layer on the plurality of luminescent structures, and wavelength conversion layers on the intermediate layer, the wavelength conversion layers vertically overlapping separate, respective luminescent structures of the plurality of luminescent structures. The intermediate layer may include a plurality of layers, the plurality of layers associated with different refractive indexes, respectively. The intermediate layer may include a plurality of sets of holes, each set of holes may include a separate plurality of holes, and each wavelength conversion layer may vertically overlap a separate set of holes on the intermediate layer.
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公开(公告)号：US20180013042A1
公开(公告)日：2018-01-11
申请号：US15705069
申请日：2017-09-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ha-nul YOO , Yong-il KIM , Nam-goo CHA , Wan-tae LIM , Kyung-wook HWANG , Sung-hyun SIM , Hye-seok NOH
CPC classification number: H01L33/60 , H01L25/0753 , H01L33/06 , H01L33/145 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/50 , H01L33/502 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
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