公开(公告)号：US20240402587A1

公开(公告)日：2024-12-05

申请号：US18603634

申请日：2024-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joong Un Park ,  Byung Jun Kang ,  Bong Keun Kim ,  Yong-Ah Kim ,  Hyung Joo Youn

IPC: G03F1/36 ,  H01L21/027 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/788

Abstract: A method for fabricating a mask for manufacturing a semiconductor device is provided. The method includes generating a first target pattern including a step portion having an inner corner and an outer corner that are spaced apart in a vertical direction; generating a second target pattern from the first target pattern; performing optical proximity correction on the second target pattern to generate a final pattern; and fabricating the mask using the final pattern. Generating the second target pattern includes forming a recess extending inwardly and in a diagonal direction relative to the inner corner of the step portion; and forming a protrusion protruding outwardly and in the diagonal direction relative to the outer corner of the step portion.

公开(公告)号：US12068327B2

公开(公告)日：2024-08-20

申请号：US17454303

申请日：2021-11-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myoung-Ho Kang ,  Yong-Ah Kim ,  Dong Hyo Park ,  Seong-Yul Park ,  Chang Hyeon Lee

IPC: H01L27/12 ,  G03F7/00 ,  G03F7/20 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L27/1222 ,  G03F7/70441 ,  H01L29/41775 ,  H01L29/78696

Abstract: A semiconductor device is provided. The semiconductor device comprises a substrate including a first region, a second region, and a connecting region placed between the first region and the second region, a plurality of first multi-channel active patterns placed in the first region of the substrate, a plurality of second multi-channel active patterns placed in the second region of the substrate, a first connecting fin type pattern which is placed in the connecting region of the substrate and extends from the first region to the second region in a first direction, and a field insulating film which is placed on the substrate and covers an upper surface of the first connecting fin type pattern, wherein a width of the first connecting fin type pattern in a second direction decreases and then increases as it goes away from the first region, and the first direction is perpendicular to the second direction.