公开(公告)号：US20240402587A1

公开(公告)日：2024-12-05

申请号：US18603634

申请日：2024-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joong Un Park ,  Byung Jun Kang ,  Bong Keun Kim ,  Yong-Ah Kim ,  Hyung Joo Youn

IPC: G03F1/36 ,  H01L21/027 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/788

Abstract: A method for fabricating a mask for manufacturing a semiconductor device is provided. The method includes generating a first target pattern including a step portion having an inner corner and an outer corner that are spaced apart in a vertical direction; generating a second target pattern from the first target pattern; performing optical proximity correction on the second target pattern to generate a final pattern; and fabricating the mask using the final pattern. Generating the second target pattern includes forming a recess extending inwardly and in a diagonal direction relative to the inner corner of the step portion; and forming a protrusion protruding outwardly and in the diagonal direction relative to the outer corner of the step portion.