公开(公告)号：US20240402587A1

公开(公告)日：2024-12-05

申请号：US18603634

申请日：2024-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joong Un Park ,  Byung Jun Kang ,  Bong Keun Kim ,  Yong-Ah Kim ,  Hyung Joo Youn

IPC: G03F1/36 ,  H01L21/027 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/788

Abstract: A method for fabricating a mask for manufacturing a semiconductor device is provided. The method includes generating a first target pattern including a step portion having an inner corner and an outer corner that are spaced apart in a vertical direction; generating a second target pattern from the first target pattern; performing optical proximity correction on the second target pattern to generate a final pattern; and fabricating the mask using the final pattern. Generating the second target pattern includes forming a recess extending inwardly and in a diagonal direction relative to the inner corner of the step portion; and forming a protrusion protruding outwardly and in the diagonal direction relative to the outer corner of the step portion.

公开(公告)号：US12256567B2

公开(公告)日：2025-03-18

申请号：US17851857

申请日：2022-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Wook Park ,  Yun Kyoung Song ,  Bong Keun Kim ,  Se Jin Park

IPC: H10D84/01 ,  H10D30/43 ,  H10D30/67 ,  H10D62/10 ,  H10D62/13 ,  H10D64/23 ,  H10D84/03 ,  H10D84/83

Abstract: A semiconductor device includes a first active pattern that extends in a first horizontal direction, a second active pattern which extends in the first horizontal direction, and is spaced apart from the first active pattern by a first distance in a second horizontal direction, a third active pattern which extends in the first horizontal direction, and is spaced apart from the second active pattern by a second distance greater than the first distance in the second horizontal direction, a first gate electrode which extends in the second horizontal direction on the first to third active patterns, a second gate electrode which extends in the second horizontal direction on the first and second active patterns, and is spaced apart from the first gate electrode in the first horizontal direction, a first gate contact and a second gate contact which extends in the second horizontal direction on the second gate electrode.