公开(公告)号：US10134838B2

公开(公告)日：2018-11-20

申请号：US15820053

申请日：2017-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myoung-Ho Kang ,  Jung-Ho Do ,  Giyoung Yang ,  Seungyoung Lee

IPC: H01L29/06 ,  H01L27/092 ,  H01L29/08 ,  H01L21/8238 ,  H01L29/78

Abstract: A semiconductor device includes a substrate that includes active patterns extending in a second direction, a third device isolation layer disposed on an upper portion of the substrate that includes a PMOSFET region and an NMOSFET region, and a gate electrode that extends across the active patterns in a first direction that crosses the second direction. The active patterns extend across the PMOSFET region and the NMOSFET region. The third device isolation layer lies between the PMOSFET region and the NMOSFET region. The third device isolation layer comprises a first part that extends in the second direction and a second part that extends in a third direction that crosses the first and second directions. The second part has opposite sidewalls parallel to the third direction, in a plan view.

公开(公告)号：US12068327B2

公开(公告)日：2024-08-20

申请号：US17454303

申请日：2021-11-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myoung-Ho Kang ,  Yong-Ah Kim ,  Dong Hyo Park ,  Seong-Yul Park ,  Chang Hyeon Lee

IPC: H01L27/12 ,  G03F7/00 ,  G03F7/20 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L27/1222 ,  G03F7/70441 ,  H01L29/41775 ,  H01L29/78696

Abstract: A semiconductor device is provided. The semiconductor device comprises a substrate including a first region, a second region, and a connecting region placed between the first region and the second region, a plurality of first multi-channel active patterns placed in the first region of the substrate, a plurality of second multi-channel active patterns placed in the second region of the substrate, a first connecting fin type pattern which is placed in the connecting region of the substrate and extends from the first region to the second region in a first direction, and a field insulating film which is placed on the substrate and covers an upper surface of the first connecting fin type pattern, wherein a width of the first connecting fin type pattern in a second direction decreases and then increases as it goes away from the first region, and the first direction is perpendicular to the second direction.

公开(公告)号：US20210175127A1

公开(公告)日：2021-06-10

申请号：US16936893

申请日：2020-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-Yul Park ,  Myoung-Ho Kang ,  Hyungkwan Park

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/45 ,  H01L29/786 ,  H01L21/02 ,  H01L21/285 ,  H01L21/306 ,  H01L21/308 ,  H01L29/66 ,  G06F30/392 ,  G03F1/36

Abstract: A method of fabricating a semiconductor device includes: (i) placing, on a first layout, first patterns that extend parallel to each other in a first direction and are spaced apart from each other in a second direction intersecting the first direction, (ii) extracting a low-density region on the first layout, (iii) defining an enclosure region that surrounds the first patterns, (iv) placing dot patterns on a second layout, (v) extracting, from the dot patterns, first dot patterns that overlap the low-density region and do not overlap the enclosure region, (vi) placing the extracted first dot patterns on the first layout, (vii) allowing the first dot patterns to extend in the first direction to form second patterns, and (viii) using the first and second patterns to respectively form first and second active patterns on a substrate.

公开(公告)号：US11205595B2

公开(公告)日：2021-12-21

申请号：US16936893

申请日：2020-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-Yul Park ,  Myoung-Ho Kang ,  Hyungkwan Park

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/45 ,  H01L29/786 ,  H01L21/02 ,  H01L21/285 ,  H01L21/306 ,  H01L21/308 ,  H01L29/66 ,  G06F30/392 ,  G03F1/36

Abstract: A method of fabricating a semiconductor device includes: (i) placing, on a first layout, first patterns that extend parallel to each other in a first direction and are spaced apart from each other in a second direction intersecting the first direction, (ii) extracting a low-density region on the first layout, (iii) defining an enclosure region that surrounds the first patterns, (iv) placing dot patterns on a second layout, (v) extracting, from the dot patterns, first dot patterns that overlap the low-density region and do not overlap the enclosure region, (vi) placing the extracted first dot patterns on the first layout, (vii) allowing the first dot patterns to extend in the first direction to form second patterns, and (viii) using the first and second patterns to respectively form first and second active patterns on a substrate.