公开(公告)号：US20230317606A1

公开(公告)日：2023-10-05

申请号：US17970008

申请日：2022-10-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yejeong SEO ,  Hyuk KIM

IPC: H01L23/528 ,  H01L27/108 ,  H01L29/417 ,  H01L29/08 ,  H01L23/522

CPC classification number: H01L23/5283 ,  H01L27/10805 ,  H01L27/1085 ,  H01L27/10873 ,  H01L27/10885 ,  H01L27/10891 ,  H01L29/41775 ,  H01L29/0847 ,  H01L23/5226

Abstract: A semiconductor device includes an extension structure including a first horizontal conductive line extension, a first interlayer insulating layer, a second horizontal conductive line extension, and a second interlayer insulating layer stacked on a substrate and extending in a first horizontal direction, a first contact configured to pass through the second interlayer insulating layer, the second horizontal conductive line extension, and the first interlayer insulating layer and contact the first horizontal conductive line extension, a second contact configured to pass through the second interlayer insulating layer and contact the second horizontal conductive line extension, and a first contact spacer extending between a sidewall of the first contact and the extension structure and configured to electrically isolate the first contact from the second horizontal conductive line extension.