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1.
公开(公告)号:US20230205963A1
公开(公告)日:2023-06-29
申请号:US17961710
申请日:2022-10-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: Akio Misaka , Noyoung Chung , Taekyum Kim , Sanghwa Lee , Woonhyuk Choi
IPC: G06F30/392 , G06F30/398
CPC classification number: G06F30/392 , G06F30/398
Abstract: A layout method of a semiconductor chip, includes designing a layout using a restriction rule such that a layout pattern having a length smaller than a first length in a first direction has to have a length smaller than a second length in a second direction, the second direction intersecting the first direction, generating a plurality of unit regions by partitioning the layout in the first direction, generating a plurality of target regions by adding a reference region to a partitioned edge of each of the plurality of unit regions, retargeting the plurality of target regions in parallel, and generating a correction layout by merging the plurality of retargeted target regions.
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公开(公告)号:US11092885B2
公开(公告)日:2021-08-17
申请号:US16845459
申请日:2020-04-10
Applicant: Samsung Electronics Co., Ltd.
Inventor: Akio Misaka , Noyoung Chung , Woonhyuk Choi
IPC: G06F30/30 , G03F1/36 , G06F30/392 , G06F30/367 , G06F30/3953 , G06F30/398
Abstract: A method of manufacturing a semiconductor device includes randomly placing a plurality of standard cells from a library in which the standard cells are pre-stored, designing an interconnection pattern in which the standard cells are connected randomly to each other, connecting the standard cells according to the interconnection pattern to generate a virtual layout, performing an optical proximity correction operation on the virtual layout using an optical proximity correction (OPC) model, and forming and verifying a mask corresponding to the virtual layout on which the optical proximity correction operation is performed.
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