公开(公告)号：US20220302316A1

公开(公告)日：2022-09-22

申请号：US17836416

申请日：2022-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woocheol SHIN ,  Sunggi HUR ,  Sangwon BAEK ,  Junghan LEE

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are stacked in a vertical direction. Each channel extends in a first direction. The gate structure extends in a second direction. The gate structure covers the channels. The source/drain layer is connected to each of opposite sidewalls in the first direction of the channels on the substrate, and includes a doped semiconductor material. The source/drain layer includes first and second epitaxial layers having first and second impurity concentrations, respectively. The first epitaxial layer covers a lower surface and opposite sidewalls in the first direction of the second epitaxial layer. A portion of each of opposite sidewalls in the first direction of the gate structure protrudes in the first direction from opposite sidewalls in the first direction of the channels to partially penetrate through the first epitaxial layer but not to contact the second epitaxial layer.

公开(公告)号：US20210257499A1

公开(公告)日：2021-08-19

申请号：US17034421

申请日：2020-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woocheol SHIN ,  Sunggi HUR ,  Sangwon BAEK ,  Junghan LEE

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L21/02 ,  H01L29/66

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are stacked in a vertical direction. Each channel extends in a first direction. The gate structure extends in a second direction. The gate structure covers the channels. The source/drain layer is connected to each of opposite sidewalls in the first direction of the channels on the substrate, and includes a doped semiconductor material. The source/drain layer includes first and second epitaxial layers having first and second impurity concentrations, respectively. The first epitaxial layer covers a lower surface and opposite sidewalls in the first direction of the second epitaxial layer. A portion of each of opposite sidewalls in the first direction of the gate structure protrudes in the first direction from opposite sidewalls in the first direction of the channels to partially penetrate through the first epitaxial layer but not to contact the second epitaxial layer.

公开(公告)号：US20240353990A1

公开(公告)日：2024-10-24

申请号：US18763232

申请日：2024-07-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seongjoo HAN ,  Jongyoub RYU ,  Woocheol SHIN

IPC: G06F3/04845 ,  G06F3/01 ,  G06T7/62

CPC classification number: G06F3/04845 ,  G06F3/013 ,  G06T7/62

Abstract: An electronic device includes a sensor, a display, and at least one processor configured to control the display to display a virtual reality content corresponding to a virtual reality environment, identify a gaze direction of a user based on data acquired through the sensor, identify a point on the virtual reality environment based on the gaze direction, identify a distance between the user and the identified point in the virtual reality environment, control the display to display a first object at a position corresponding to the identified point in the virtual reality content, identify, based on a user command received while the first object is displayed, whether a virtual object is present within a second object positioned at the identified point in the virtual reality environment, and control the virtual object according to the user command if the virtual object being identified as present.

公开(公告)号：US20210175230A1

公开(公告)日：2021-06-10

申请号：US16911795

申请日：2020-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woocheol SHIN ,  Myunggil KANG

IPC: H01L27/06 ,  H01L49/02 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: A resistor includes a substrate including an active region protruding from an upper surface of the substrate and extending in a first horizontal direction, a doped region extending in the first horizontal direction on the active region and comprising a semiconductor layer with n-type impurities, a plurality of channel layers spaced apart from each other in a vertical direction on the active region and connected to the doped region, a first gate electrode and a second gate electrode extending in the second horizontal direction intersecting the first horizontal direction and surrounding the plurality of channel layers, a first contact plug and a second contact plug in contact with an upper surface of the doped region. The first contact plug is adjacent to the first gate electrode. The second contact plug is adjacent to the second gate electrode.

公开(公告)号：US20240213371A1

公开(公告)日：2024-06-27

申请号：US18597440

申请日：2024-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woocheol SHIN ,  Sunggi HUR ,  Sangwon BAEK ,  Junghan LEE

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/78618 ,  H01L21/02236 ,  H01L21/02532 ,  H01L21/02603 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66742 ,  H01L29/78696

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are stacked in a vertical direction. Each channel extends in a first direction. The gate structure extends in a second direction. The gate structure covers the channels. The source/drain layer is connected to each of opposite sidewalls in the first direction of the channels on the substrate, and includes a doped semiconductor material. The source/drain layer includes first and second epitaxial layers having first and second impurity concentrations, respectively. The first epitaxial layer covers a lower surface and opposite sidewalls in the first direction of the second epitaxial layer. A portion of each of opposite sidewalls in the first direction of the gate structure protrudes in the first direction from opposite sidewalls in the first direction of the channels to partially penetrate through the first epitaxial layer but not to contact the second epitaxial layer.

公开(公告)号：US20220122965A1

公开(公告)日：2022-04-21

申请号：US17564593

申请日：2021-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woocheol SHIN ,  Myunggil KANG

IPC: H01L27/06 ,  H01L21/02 ,  H01L49/02 ,  H01L29/06 ,  H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L29/417

Abstract: A resistor includes a substrate including an active region protruding from an upper surface of the substrate and extending in a first horizontal direction, a doped region extending in the first horizontal direction on the active region and comprising a semiconductor layer with n-type impurities, a plurality of channel layers spaced apart from each other in a vertical direction on the active region and connected to the doped region, a first gate electrode and a second gate electrode extending in the second horizontal direction intersecting the first horizontal direction and surrounding the plurality of channel layers, a first contact plug and a second contact plug in contact with an upper surface of the doped region. The first contact plug is adjacent to the first gate electrode. The second contact plug is adjacent to the second gate electrode.