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公开(公告)号：US20190312182A1
公开(公告)日：2019-10-10
申请号：US16442870
申请日：2019-06-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Wan Tae LIM , Sung Hyun SIM , Hanul YOO , YONG IL KIM , Hye Seok NOH , Ji Hye YEON
Abstract: A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.
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公开(公告)号：US20180047880A1
公开(公告)日：2018-02-15
申请号：US15486982
申请日：2017-04-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Wan Tae LIM , Sung Hyun SIM , Hanul YOO , YONG IL KIM , Hye Seok NOH , Ji Hye YEON
CPC classification number: H01L33/507 , H01L27/156 , H01L33/504 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L2933/0041 , H01L2933/005 , H01L2933/0058
Abstract: A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.
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公开(公告)号：US20170092820A1
公开(公告)日：2017-03-30
申请号：US15279864
申请日：2016-09-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Il KIM , Hyong Sik WON , Wan Tae LIM , Nam Goo CHA
CPC classification number: H01L33/50 , H01L25/0753 , H01L27/156 , H01L33/08 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/58
Abstract: A light emitting device package may include: a light emitting structure including a plurality of light emitting regions configured to emit light, respectively; a plurality of light adjusting layers formed above the light emitting regions to change characteristics of the light emitted from the light emitting regions, respectively; a plurality of electrodes configured to control the light emitting regions to emit the light, respectively; and an isolation insulating layer disposed between the light emitting regions to insulate the light emitting regions from one another, the isolation insulating layer forming a continuous structure with respect to the light emitting regions.
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公开(公告)号：US20170077348A1
公开(公告)日：2017-03-16
申请号：US15141222
申请日：2016-04-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Wan Tae LIM , Yong II Kim , Nam Goo Cha , Sung Hyun Sim
CPC classification number: H01L33/14 , H01L33/44 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a magnetic layer on the light-emitting structure. The magnetic layer may have at least one magnetization direction that is parallel to an upper surface of the active layer. The magnetic layer may generate a magnetic field that is parallel to the upper surface of the active layer. The magnetic layer may include multiple structures that may have different magnetization directions. Multiple magnetic layers may be included on the light-emitting structure. A magnetic layer may be on a contact electrode. A magnetic layer may be isolated from a pad electrode.
Abstract translation: 半导体发光器件包括在发光结构上包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构和磁性层。 磁性层可以具有平行于有源层的上表面的至少一个磁化方向。 磁性层可以产生平行于有源层的上表面的磁场。 磁性层可以包括可以具有不同磁化方向的多个结构。 多个磁性层可以包括在发光结构上。 磁性层可以在接触电极上。 磁性层可以与焊盘电极隔离。
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公开(公告)号：US20200243723A1
公开(公告)日：2020-07-30
申请号：US16851354
申请日：2020-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Il KIM , Hyong Sik WON , Wan Tae LIM , Nam Goo CHA
IPC: H01L33/50 , H01L25/075 , H01L33/44 , H01L33/08 , H01L33/32
Abstract: A light emitting device package may include: a light emitting structure including a plurality of light emitting regions configured to emit light, respectively; a plurality of light adjusting layers formed above the light emitting regions to change characteristics of the light emitted from the light emitting regions, respectively; a plurality of electrodes configured to control the light emitting regions to emit the light, respectively; and an isolation insulating layer disposed between the light emitting regions to insulate the light emitting regions from one another, the isolation insulating layer forming a continuous structure with respect to the light emitting regions.
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Patent Agency Ranking
公开(公告)号：US20180182931A1
公开(公告)日：2018-06-28
申请号：US15684144
申请日：2017-08-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong Gun LEE , Yong Il KIM , Young Soo PARK , Jin Sub LEE , Wan Tae LIM
IPC: H01L33/50 , H01L33/46 , H01L25/075
Abstract: A light emitting device package includes a light emitting structure including a first light emitting cell, a second light emitting cell, and a third light emitting cell, each of the first to third light emitting cells including an active layer to emit light of a first wavelength in a first direction and being separated from each other in a second direction, orthogonal to the first direction, a first light adjusting portion including a first wavelength conversion layer in a first recess portion of the first light emitting cell, the first wavelength conversion layer to convert light of the first wavelength to light of a second wavelength, and a second light adjusting portion including a second wavelength conversion layer in a second recess portion of the second light emitting cell, the second wavelength conversion layer to convert light of the first wavelength to light of a third wavelength.
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公开(公告)号：US20180047780A1
公开(公告)日：2018-02-15
申请号：US15449396
申请日：2017-03-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ji Hye YEON , Sung Hyun SIM , Wan Tae LIM , Yong Il KIM , Hanul YOO
CPC classification number: H01L27/156 , H01L33/50
Abstract: A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth, and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.
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公开(公告)号：US20140048838A1
公开(公告)日：2014-02-20
申请号：US13929431
申请日：2013-06-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong In YANG , Yong Il KIM , Kwang Min SONG , Wan Tae LIM , Se Jun HAN , Hyun Kwon HONG
IPC: H01L33/62
CPC classification number: H01L33/0075 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2224/16 , H01L2933/0016
Abstract: A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.
Abstract translation: 半导体发光器件包括第一导电半导体层，有源层，第二导电半导体层，第一内部电极，第二内部电极，绝缘部分以及第一和第二焊盘电极。 有源层设置在第一导电半导体层的第一部分上，并且其上设置有第二导电层。 第一内部电极设置在与第一部分分离的第一导电半导体层的第二部分上。 第二内部电极设置在第二导电半导体层上。 绝缘部分设置在第一和第二内部电极之间，并且第一和第二焊盘电极设置在绝缘部分上以连接到第一和第二内部电极中的相应一个。
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公开(公告)号：US20180286915A1
公开(公告)日：2018-10-04
申请号：US15788933
申请日：2017-10-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ji Hye YEON , Han Kyu SEONG , Wan Tae LIM , Sung Hyun SIM , Hanul YOO
CPC classification number: H01L27/153 , H01L25/0753 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/507 , H01L33/62
Abstract: A semiconductor light emitting device includes a plurality of light emitting cells including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first and second conductivity type semiconductor layers, an insulating layer on the plurality of light emitting cells and having a first opening and a second opening defining a first contact region of the first conductivity type semiconductor layer and a second contact region of the second conductivity type semiconductor layer, respectively, in each of the plurality of light emitting cells, a connection electrode on the insulating layer and connecting the first contact region and the second contact region to electrically connect the plurality of light emitting cells to each other, a transparent support substrate on the insulating layer and the connection electrode, and a transparent bonding layer between the insulating layer and the transparent support substrate.
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10.发明申请公开(公告)号：US20160013364A1
公开(公告)日：2016-01-14
申请号：US14607920
申请日：2015-01-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Ki Hyung LEE , Wan Tae LIM , Geun Woo KO , Min Wook CHOI
CPC classification number: H01L33/24 , F21K9/232 , F21S41/147 , F21S41/192 , F21Y2101/00 , F21Y2115/10 , H01L33/08 , H01L33/18 , H01L33/22 , H01L2224/16245 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
Abstract: A method of manufacturing a nanostructure semiconductor light emitting device may includes preparing a mask layer by sequentially forming a first insulating layer and a second insulating layer on a base layer configured of a first conductivity-type semiconductor, forming a plurality of openings penetrating the mask layer, growing a plurality of nanorods in the plurality of openings, removing the second insulating layer, preparing a plurality of nanocores by re-growing the plurality of nanorods, and forming nanoscale light emitting structures by sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores. The plurality of openings may respectively include a mold region located in the second insulating layer, and the mold region includes at least one curved portion of which an inclination of a side surface varies according to proximity to the first insulating layer.
Abstract translation: 制造纳米结构半导体发光器件的方法可以包括通过在由第一导电型半导体构成的基底层上依次形成第一绝缘层和第二绝缘层来制备掩模层，形成穿过掩模层的多个开口 在所述多个开口中生长多个纳米棒，去除所述第二绝缘层，通过重新生长所述多个纳米棒来制备多个纳米孔，以及通过依次生长活性层和第二导电类型形成纳米尺度的发光结构 半导体层在多个纳米孔的表面上。 多个开口可以分别包括位于第二绝缘层中的模具区域，并且模具区域包括至少一个弯曲部分，其侧表面的倾斜度根据与第一绝缘层的接近度而变化。
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