公开(公告)号：US20160013364A1

公开(公告)日：2016-01-14

申请号：US14607920

申请日：2015-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo CHA ,  Ki Hyung LEE ,  Wan Tae LIM ,  Geun Woo KO ,  Min Wook CHOI

IPC: H01L33/24 ,  H01L33/08 ,  H01L33/00 ,  H01L33/54 ,  H01L33/14 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/24 ,  F21K9/232 ,  F21S41/147 ,  F21S41/192 ,  F21Y2101/00 ,  F21Y2115/10 ,  H01L33/08 ,  H01L33/18 ,  H01L33/22 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method of manufacturing a nanostructure semiconductor light emitting device may includes preparing a mask layer by sequentially forming a first insulating layer and a second insulating layer on a base layer configured of a first conductivity-type semiconductor, forming a plurality of openings penetrating the mask layer, growing a plurality of nanorods in the plurality of openings, removing the second insulating layer, preparing a plurality of nanocores by re-growing the plurality of nanorods, and forming nanoscale light emitting structures by sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores. The plurality of openings may respectively include a mold region located in the second insulating layer, and the mold region includes at least one curved portion of which an inclination of a side surface varies according to proximity to the first insulating layer.

Abstract translation: 制造纳米结构半导体发光器件的方法可以包括通过在由第一导电型半导体构成的基底层上依次形成第一绝缘层和第二绝缘层来制备掩模层，形成穿过掩模层的多个开口 在所述多个开口中生长多个纳米棒，去除所述第二绝缘层，通过重新生长所述多个纳米棒来制备多个纳米孔，以及通过依次生长活性层和第二导电类型形成纳米尺度的发光结构 半导体层在多个纳米孔的表面上。 多个开口可以分别包括位于第二绝缘层中的模具区域，并且模具区域包括至少一个弯曲部分，其侧表面的倾斜度根据与第一绝缘层的接近度而变化。