公开(公告)号：US12103850B2

公开(公告)日：2024-10-01

申请号：US17060893

申请日：2020-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Van Luan Nguyen ,  Keunwook Shin ,  Hyeonjin Shin ,  Changhyun Kim ,  Changseok Lee ,  Yeonchoo Cho

IPC: B32B9/00 ,  C01B32/186

CPC classification number: C01B32/186 ,  Y10T428/30

Abstract: A method of forming graphene includes: preparing a substrate in a reaction chamber; performing a first growth process of growing a plurality of graphene aggregates apart from each other on the substrate at a first growth rate by using a reaction gas including a carbon source; and performing a second growth process of forming a graphene layer by growing the plurality of graphene aggregates at a second growth rate slower than the first growth rate by using the reaction gas including the carbon source.

公开(公告)号：US12191392B2

公开(公告)日：2025-01-07

申请号：US17505955

申请日：2021-10-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Van Luan Nguyen ,  Minsu Seol ,  Eunkyu Lee ,  Junyoung Kwon ,  Hyeonjin Shin ,  Minseok Yoo

IPC: H01L29/786 ,  H01L29/16 ,  H01L29/24

Abstract: A semiconductor device according to an embodiment may include a substrate, an adhesive layer, and a semiconductor layer. The semiconductor layer includes a 2D material having a layered structure. The adhesive layer is interposed between the substrate and the semiconductor layer, and has adhesiveness to a 2D material.

公开(公告)号：US11961898B2

公开(公告)日：2024-04-16

申请号：US17546303

申请日：2021-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Van Luan Nguyen ,  Minsu Seol ,  Junyoung Kwon ,  Hyeonjin Shin ,  Minseok Yoo ,  Yeonchoo Cho

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/304 ,  H01L21/463

CPC classification number: H01L29/66045 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/02568 ,  H01L21/304 ,  H01L21/463 ,  H01L29/66969

Abstract: A method of patterning a 2D material layer is includes selectively forming a first material layer on a surface of a substrate to form a first region in which the first material layer covers the surface of the substrate and to further form a second region in which the surface of the substrate is exposed from the first material layer, the first material layer having a strong adhesive force with a 2D material. The method further includes forming a 2D material layer is formed in both the first region and the second region. The method further includes selectively removing the 2D material layer from the second region based on using a physical removal method, such that the 2D material layer remains in the first region.